| Description,Model Structure,Modeled RX,,Actual CAD RX,,RX Discrepancy,Modeled CX,Actual CX,CX Discrepancy |
| ,,Contacts,Sheets,Contacts,Sheets,,Sheet,Sheet, |
| All Periphery FETs,mXXXX d g s b w l m ad as pd ps nrd nrs,none,diff(min),licon/mcon/vias, diff(ext)/poly/li/m1/m2-m3,none,poly/licon/li,li/m1/m2-m3,li-negligible |
| 20V NDEFETs NONISO,xXXXX d g s b w l m ad as pd ps nrd nrs,none,diff(min)/licon,mcon/vias, diff(ext)/poly/li/m1/m2-m3,none,poly/licon/li,li/m1/m2-m3,li-negligible |
| 20V NDEFETs ISO,xXXXX d g s b w l m ad as pd ps nrd nrs,none,diff(min)/licon,mcon/vias, diff(ext)/poly/li/m1/m2-m3,none,poly/licon/li/dnwdiode_psub,li/m1/m2-m3,li-negligible |
| 20V PDEFETs,xXXXX d g s b w l m ad as pd ps nrd nrs,none,diff(min)/licon,mcon/vias, diff(ext)/poly/li/m1/m2-m3,none,poly/licon/li,li/m1/m2-m3/dnwhvdiode_psub,li-negligible |
| Cell FETs,NOT EXTRACTED FROM LAYOUT,N/A,N/A,N/A,N/A,N/A,N/A,N/A,N/A |
| All Diodes,dXXXX n1 n2 area pj,licon,diff,licon/mcon/vias, poly/li/m1/m2-m3,licon-negligible,Junction,li/m1/m2-m3,none |
| RF ESD Diodes,xesd_XXXX n1 n2 area pj,licon/mcon/ via,li/m1/m2,via2,m3,none,li/m1/m2,m3,none |
| Parasitic PNP,qXXXX nc nb ne ns pnppar m,licon/mcon,diff/li,mcon/vias,li/m1/m2-m3,li/mcon-neglible,na,li/m1/m2-m3,none |
| Parasitic PNP (5X),qXXXX nc nb ne ns pnppar5x m,licon/mcon,diff/li,mcon/vias,li/m1/m2-m3,li/mcon-neglible,na,li/m1/m2-m3,none |
| Parasitic NPN,qXXXX nc nb ne ns npnpar m,licon/mcon,diff/li,mcon/vias,li/m1/m2-m3,li/mcon-neglible,na,li/m1/m2-m3,none |
| Non-precision Resistors,rXXXX a b l w m,none,sheet layer,licon/mcon/vias,none (no sheet resistance where sheet layer & res id layer intersect),none,none,junction/li/m1/m2-m3,parasitic capacitance to substrate (tool limitation) |
| Precision poly resistor,xXXXXX hrpoly_X_X r0 r1 b l w m,licon/mcon,poly/li,via,m1/m2-m3,none,poly-sub,m1/m2-m3,li-negligible |
| MIM Capacitor (2-terminal),xXXXX xcmimc2 c0 c1 w l m ,via2,m3,N/A,poly/li/m1/m2,m2 (of the device) -negligible,capm-m2,li/m1/m2-m3,routing layers underneath device |
| MIM Capacitor (3-terminal),xXXXX xcmimc c0 c1 b w l m ,via2,m3,N/A,poly/li/m1/m2,m2 (of the device) -negligible,m2-sub/capm-m2,(1) Carea of M2-sub (non-overlap CAPM w/ 0.14um upsize)\n(2) M3 Cap by 1 snap grid width,none |
| Isolated Pwell Resistor,xXXXX pwres r0 r1 b l w m,licon/mcon,pwell/li,vias,m1/m2-m3,none,none,junction/m1/m2-m3,li-negligible |
| Vertical Parallel Plate Cap,xXXXX xcmvpp c0 c1 b m (note: no special RCX implementation for VPP required since black-box LVS will be used),mcon/via,li/m1/m2,none (black box LVS),none (black box LVS),none,li/mcon//m1/via/m2,none (black box LVS),Parasitic capacitance to routing above |
| Vertical Parallel Plate Cap over MOSCAP,xXXXX xcmvpp2_* c0 c1 b m ,mcon/via,li/m1/m2,none (black box LVS),none (black box LVS),none,li/mcon//m1/via/m2,none (black box LVS),Parasitic capacitance to routing above |
| 4-terminal Vertical Parallel Plate Cap (M3 Shielded),xXXXXX xcmvpp*x*_m3shield c0 c1 b term4 m=,licon/mcon/ via,poly/li/m1/m2,via3/via4,m3/m4/m5,none,poly/licon/li/mcon/m1/via/m2/m3,"m3-substrate (not m3-m2), neighboring metal to VPP metal",none |
| 4-terminal Vertical Parallel Plate Cap (M5 Shielded),xXXXXX xcmvpp*_*m5shield c0 c1 b term4 m=,licon/mcon/ via/via2/via3,poly/li/m1/m2/m3/m4,via4,m5,none,poly/licon/li/mcon/m1/via/m2/m3/m4/m5,neighboring metal to VPP metal,none |
| 3-terminal Vertical Parallel Plate Cap,xXXXXX xcmvpp*x* c0 c1 b m=\nxXXXXX xcmvpp*x*_lishield c0 c1 b m=,mcon/ via,li/m1/m2,via2/via3/via4,m3/m4/m5,none,li/mcon/m1/via/m2,neighboring metal to VPP metal,Parasitic capacitance to routing above |
| 3-terminal Vertical Parallel Plate Cap (for S8Q/S8P only),xXXXXX xcmvpp*x*_m3_lishield c0 c1 b m=,mcon/ via/via2,li/m1/m2/m3,via3/via4,m4/m5,none,li/mcon/m1/via/m2/via2/m3,neighboring metal to VPP metal,none |
| Varactor,xXXXXX xcnwvc c0 c1 b l w m,licon/mcon/via,diff/poly/li/m1/m2,via2,m3,none,poly/li/m1/m2,nwdiodemodel/m3*,none |
| Inductor,xXXXXX xindXXXX t1 t2 body (note: no special RCX implementation for inductor required since black-box LVS will be used),via,m2/Cu,Nothing extracted within inductor.dg layer,,none,m2/via/Cu,Nothing extracted within inductor.dg layer,none |
