Name,Description,Flags,Value,Unit
(poly.X.1),All FETs would be checked for W/Ls as documented in spec 001-02735  (Exempt FETs that are pruned; exempt for W/L's inside :drc_tag:`areaid.sc` and inside cell name scs8*decap* and listed in the MRGA as a decap only W/L),,,
(poly.X.1a),Min & max dummy_poly L is equal to min L allowed for corresponding device type (exempt rule for dummy_poly in cells listed on Table H3),,,
(poly.1a),Width of poly,,0.150,µm
(poly.1b),Min channel length (poly width) for pfet overlapping lvtn (exempt rule for dummy_poly in cells listed on Table H3),,0.350,µm
(poly.2),Spacing of poly to poly except for poly.c2 and poly.c3; Exempt cell: sr_bltd_eq where it is same as poly.c2,,0.210,µm
(poly.3),Min poly resistor width,,0.330,µm
(poly.4),Spacing of poly on field to diff (parallel edges only),P,0.075,µm
(poly.5),Spacing of poly on field to tap,P,0.055,µm
(poly.6),Spacing of poly on diff to abutting tap (min source),P,0.300,µm
(poly.7),Extension of diff beyond poly (min drain),P,0.250,
(poly.8),Extension of poly beyond diffusion (endcap),P,0.130,
(poly.9),Poly resistor spacing to poly or spacing (no overlap) to diff/tap,,0.480,µm
(poly.10),Poly can't overlap inner corners of diff,,,
(poly.11),No 90 deg turns of poly on diff,,,
(poly.12),"(Poly NOT (nwell NOT hvi)) may not overlap tap; Rule exempted for cell name ""s8fgvr_n_fg2"" and gated_npn and inside UHVI.",P,,
(poly.15),Poly must not overlap diff:rs,,,
(poly.16),"Inside RF FETs defined in Table H5, poly cannot overlap poly across multiple adjacent instances",,,