waffle_chip,icfb ver 5.0,icfb ver 5.1,,,
drawing,dg,drw,,,
pin            ,pn,pin,,,
boundary       ,by,bnd,,,
net            ,nt,net,,,
res            ,rs,res,,,
label          ,ll,lbl,,,
cut            ,ct,cut,,,
short          ,st,sho,,,
pin            ,pn,pin,,,
gate           ,ge,gat,,,
probe          ,pe,pro,,,
blockage,be,blo,,,
model,ml,mod,,,
optionX (X = 1…n),oX (X = 1..n),opt*(X=1..n),,,
fuse,fe,fus,,,
mask           ,mk,mas*,,,
maskAdd        ,md,mas*,,,
maskDrop       ,mp,mas*,,,
waffleAdd1     ,w1,waffleAdd1,,,
waffleAdd2     ,w2,waffleAdd2,,,
waffleDrop     ,wp,waf,,,
error          ,er,err,,,
warning        ,wg,wng,,,
dummy,dy,dmy,,,
,,,,,
Layout Data Name & GDSII No.,Brief description,icfb ver 5.1,"Identifies\n(See WOLF-41, SPR 95111 for more details)",Who,Use
areaid.sl{81:1},areaid sealring,areaid.sea,The area of the Seal ring,Tech,
areaid.ww{81:13},areaid Waffle Window,areaid.waf,Used to prevent waffle shifting. When larger than areaid:sl re-defines the placement of waffles. ,Frame,CLDRC
areaid.dn{81:50},areaid dead Zon,areaid.dea,“deadzone” area in the DieSealR pcell (Seal Ring) for metal stress relief rule checks,Tech,
areaid.cr{81:51},areaid critCorner,areaid.cri*,For portions of layout that are not to be put in the critical side do to stress constraints. Should be used sparingly and only over the portion of the layout to remove DRC violations. Avoid using a blanket polygon over the entire layout. This layer is to be used instead of using the noCritSideReg verification option in Stress.\n“critical corner” area in the DieSealR pcell (Seal Ring) for metal stress relief rule checks,Tech,Stress
areaid.cd{81:52},areaid critSid,areaid.cri*,“criticalsid” area in the DieSealR pcell (Seal Ring) for metal stress relief rule checks,Tech,Stress
areaid.ce{81:2},areaid core,areaid.cor,Memory core (memory cells and approved on-pitch only),Tech,DRC
areaid.fe{81:3},areaid frame,areaid.fra*,Pads in the frame,Frame,DRC
areaid.ed{81:19},areaid ESD,areaid.esd,ESD devices- Surrounds any diffusion or ESD nwell tap connected to a signal pad. (only over ESD devices with special poly/tap exemption rules per LFL),"ESD, Des",DRC
areaid.dt{81:11},areaid die cut,areaid.die,"Location of the die within the frame used in frame builder \ngeneration to create blanking for die and other drop-ins. Also used in cldrc/drc for rules in frame to die edge (waffles, nsm, metals etc)",Frame,Tech
areaid.mt{81:10},areaid module cut,areaid.mod,Location of e-test modules within the frame used in frame builder generation to create data in scribe lane(example: opaque/clear masks) and to mark location of cells (etest and fab)for frame reports. Also used in drc/cldrc for rules to cell edge.,Frame,Tech
areaid.ft{81:12},areaid frameRect,areaid.fra*,Boundary of the frame used in frame builder generation to mark boundary of frame. Also used in cldrc/drc for rules to frame edge ,Frame,DRC/CLDRC
areaid.de{81:23},areaid Diode,areaid.dio,The area occupied by diodes; Used to identify diodes during LVS,All,LVS
areaid.sc{81:4},areaid standardc,areaid.sta,Cells in the standard cell library (over standard cell IP blocks only) .,Standard cell,DRC
areaid.st{81:53},areaid SubstrateCut,areaid.sub,"Regions to be considered as isolated substrates (only to designate 2 different resistively connected substrate \nregions, >100um apart)","Tech, Des, ESD","Latch up, LVS, soft"
areaid.en{81:57},areaid extended drain,areaid.ext,Used to identify the extended drain devices ,"Tech, Des, ESD",LVS
areaid.le{81:60},areaid LV Native,areaid.lvn,Used to identify the 3V Native NMOS versus 5V Native NMOS,"Tech, Des",LVS
areaid.po{81:81},areaid photo ,areaid.pho,The areaid id is to identify the dnwell photo diode,"Tech, Des",DRC
areaid.et{81:101},areaid etest,areaid.ete,Used in etest modules,Frame,DRC
areaid.ld{81:14},areaid low tap density,areaid.low,"6um tap to diff rule will not be checked in this region\nDiffusion >6u from related tap, requiring >50u from sigPadDiff && sigPadMetNtr).\nShould be used sparingly and only over the portion of the layout to remove DRC violations. This layer is not to be used if a tapping solution can be found. This layer can only be used if there is low risk for latchup. This layer will be reviewed during PDQC.",All,DRC
areaid.ns{81:15),areaid not-crtical side,areaid .not,"critSideReg stress rules will not be checked in this region\nCannot be placed in the critical side – uncommon, or where stress \nerrors can't be fixed)",All,DRC
areaid.ij{81:17},areaid injection,areaid.inj,Identify all circuits that are susceptible to injection and ensure no signal-pad connected diffusion is within 100u.\n“areaid.inj” encloses any circuitry deemed sensitive (by design team) to injected substrate areaid.inj encloses any PVT compliant circuitry,All,DRC
areaid.hl{81:63},areaid.hvnwell,areaid.hvn,"Identify nwell hooked to HV but containing FETs with thin oxide; \nPotential difference across the FET terminals is LV\nUsed over lv devices, operating in lv mode, placed in hv nwells, and should NOT have hvi",All,DRC
areaid.re{81:125},areaid rf diode,areaid.rfd,Defines rf diodes that need to be extracted with series resistance (memo GCZ-124/125),All,LVS
areaid.rd{81:24},areaid.rdlprobepad,areaid.rdl,Ignore RDL keepouts when opening up PMM2 ,All,CLDRC
areaid.sf{81:6},areaid sigPadDiff,,Identify all srdrn diffusions and tap which are intended to be \nconnected to signal pad (io Nets).  Goes over diffusions connected to a signal pad - including through a poly resistor,All,LATCHUP
areaid.sl{81:7},areaid.sigPadWell,,"Identify all nwells and pwells which are intended to be connected to signal pad (io Nets).  Goes over wells with tap connected to a signal pad, including through a poly resistor",All,LATCHUP
areaid.sr{81:8},areaid sigPadMetNtr,,"Identify all srcdrn, tap, and wells which are intended to be \nmetallically connected to signal pad (io Nets) not through a resistor.  \nMust be used in unison with areaid.sigPadDifff or areaid.sigPadWell.\nUsed with one of the above 2 areaids, nodes metallically \nconnection to a sigPad (not through res)",All,LATCHUP
inductor:dg{82:24},ID layer for inductor,,Inductors,"Tech, Des",DRC
"t1,2,3 {82:26, 27, 28}",terminal labels for inductor,,Labels required by inductor terminals to be recognized as device,"Tech, Des",LVS
poly:ml {66:83},poly device model,,Model name extraction,"Tech, Des, ESD",LVS
ncm {92:44},N-Core Implant,,Ncm.dg is available as a drawn layer,All,DRC/CLDRC
 protect),VPP capacitor,,"Interdigitated, vertical Li1, M1 and M2 capacitor ",All,LVS
capm_2t.dg,MIM caps (2 terminal model),,ID layer for MIMCAP that will be treated as 2T device,All,DRC/LVS
cpmm:dg{91},Drawn compatible polyimide layer,,Drawn compatible layer and used only inside S8 RF pad,Frame,
li1.be{67:10},li1 blockage layer,,Li1 blockage layer used for IP integration (per CWR 137),All,DRC
met1.be{68:10},Metal1 blockage layer,,Metal 1 blockage layer used for IP integration (per CWR 137),All,DRC
met2.be{69:10},Metal2 blockage layer,,Metal 2 blockage layer used for IP integration (per CWR 137),All,DRC
met3.be{70:10},Metal3 blockage layer,,Metal 3 blockage layer used for IP integration (per CWR 137),All,DRC
met4.be{71:10},Metal4 blockage layer,,Metal 4 blockage layer used for IP integration (per CWR 137),All,DRC
met5.be{72:10},Metal5 blockage layer,,Metal 5 blockage layer used for IP integration (per CWR 137),All,DRC
vhvi {74:21},Very High voltage id layer,,Used to identify nodes that operate at 12V nominal (16V max),Des,VHV Rules
uhvi {74:22},Ultra High voltage id layer,,Used to identify nodes that operate at 20V nominal,Des,UHV Rules
areaid.e0{81:58},Area extended drain,areaid.ext,Used to identify 20V drain extended devices,Des,LVS
areaid.zr{81:18},Area zener diode,areaid.zen,Used to identify Zener diodes,Des,LVS
fom.dy{},FOM dummy,,FOM waffle drawn in this layer,All,Waffles
prune:dg{84:44},prune,,Areas ignored by LVS ,Frame,LVS
areaid:cr {81:55},copper pillar (.cuPillar),areaid.cup,"Placement of Cu pillar over the pad area, streamed out to Amkor,  s8pfhd-10r flow only",Die,CLDRC  s8pfhd-10r
cyprotect.dg {56.44},External F25 layer,cyprotect.dg,Switch to direct streaming to drawn (no protect) or mask layer (with protect),Frame,CLDRC
cytextmc.dg {50:44},Locations for mask compose,cytextmc.dg,Text to extract placement for Fab25 tool,Frame,CLDRC
cypsbr.dg {51:44},No phaseshift allowed,cypsbr.dg,Phaseshift layer common to all F25 phaseshift masks,Frame,
areaid:ag{81:79},analog,areaid.ana,Used to identify analog circuits,All,Analog
natfet.dg {124:21},DEFETs,natfet.dg,"Add TUNM for SONOS channel implants. See SPR 117559, SGL-529",All,DRC/CLDRC
areaid:lw,Ultra High voltage id layer, ,Areaid low voltage: UHV box to put all HV/LV curcuits in,All,Analog
"* To distinguish the layers, the full name of the layer needs to be turned on in the LSW window",,,,,
"As the layers are displayed in LSW window in icfb version 5.0; For purpose layer displayed in version 5.1, pls refer table C3",,,,,