Initial Alpha release of the Sky90fd PDK
Signed-off-by: Ethan Mahintorabi <ethanmoon@google.com>
diff --git a/CMakeLists.txt b/CMakeLists.txt
new file mode 100644
index 0000000..e69de29
--- /dev/null
+++ b/CMakeLists.txt
diff --git a/digital/sky90fd.lef b/digital/sky90fd.lef
new file mode 100755
index 0000000..7de20b3
--- /dev/null
+++ b/digital/sky90fd.lef
@@ -0,0 +1,374 @@
+# SKY90FD Technology LEF
+
+VERSION 5.7 ;
+BUSBITCHARS "[]" ;
+DIVIDERCHAR "/" ;
+
+PROPERTYDEFINITIONS
+ LAYER LEF58_TYPE STRING ;
+END PROPERTYDEFINITIONS
+
+UNITS
+ DATABASE MICRONS 1000 ;
+ TIME NANOSECONDS 1 ;
+ VOLTAGE VOLTS 1 ;
+ CURRENT MILLIAMPS 1 ;
+ POWER MILLIWATTS 1 ;
+END UNITS
+
+MANUFACTURINGGRID 0.005 ;
+LAYER OVERLAP
+ TYPE OVERLAP ;
+END OVERLAP
+
+# Layers up to bottom of metal
+
+LAYER CAPP
+ TYPE IMPLANT ;
+ WIDTH 0.32 ;
+END CAPP
+
+LAYER VTN1
+ TYPE IMPLANT ;
+END VTN1
+
+LAYER VTP1
+ TYPE IMPLANT ;
+END VTP1
+
+LAYER VTN2
+ TYPE IMPLANT ;
+END VTN2
+
+LAYER VTP2
+ TYPE IMPLANT ;
+END VTP2
+
+LAYER POLY
+ TYPE MASTERSLICE ;
+END POLY
+
+LAYER NSD
+ TYPE IMPLANT ;
+ WIDTH 0.2 ;
+END NSD
+
+LAYER PSD
+ TYPE IMPLANT ;
+ WIDTH 0.2 ;
+END PSD
+
+LAYER CON
+ TYPE CUT ;
+ SPACING 0.13 ;
+ WIDTH 0.13 ;
+ ENCLOSURE ABOVE 0.015 0.035 ;
+END CON
+
+
+LAYER M1Cu
+ TYPE ROUTING ;
+ WIDTH 0.1600 ;
+ AREA 0.0832 ;
+ SPACING 0.1600 ;
+ SPACING 0.1600 SAMENET ;
+ PITCH 0.3200 ;
+ DIRECTION HORIZONTAL ;
+ RESISTANCE RPERSQ 0.09000000 ;
+ THICKNESS 0.24000000 ;
+END M1Cu
+
+LAYER V12Cu
+ TYPE CUT ;
+ RESISTANCE 5.0 ;
+ SPACING 0.170 ;
+ SPACING 0.00 SAMENET LAYER CON STACK ;
+ ENCLOSURE BELOW 0.005 0.035 ;
+ ENCLOSURE ABOVE 0.005 0.035 ;
+END V12Cu
+
+LAYER M2Cu
+ TYPE ROUTING ;
+ WIDTH 0.1600 ;
+ AREA 0.0952 ;
+ SPACING 0.1600 ;
+ SPACING 0.1600 SAMENET ;
+ PITCH 0.320 ;
+ DIRECTION VERTICAL ;
+ RESISTANCE RPERSQ 0.09000000 ;
+ THICKNESS 0.24000000 ;
+END M2Cu
+
+LAYER V23Cu
+ TYPE CUT ;
+ RESISTANCE 5.0 ;
+ SPACING 0.170 ;
+ SPACING 0.00 SAMENET LAYER V12Cu STACK ;
+ SPACING 0.00 SAMENET LAYER CON STACK ;
+ ENCLOSURE BELOW 0.005 0.035 ;
+ ENCLOSURE ABOVE 0.005 0.035 ;
+END V23Cu
+
+
+LAYER M3Cu
+ TYPE ROUTING ;
+ WIDTH 0.1600 ;
+ AREA 0.0832 ;
+ SPACING 0.1600 ;
+ SPACING 0.1600 SAMENET ;
+ PITCH 0.3200 ;
+ DIRECTION HORIZONTAL ;
+ RESISTANCE RPERSQ 0.09000000 ;
+ THICKNESS 0.24000000 ;
+END M3Cu
+
+LAYER V34Cu
+ TYPE CUT ;
+ RESISTANCE 5.0 ;
+ SPACING 0.170 ;
+ SPACING 0.00 SAMENET LAYER V23Cu STACK ;
+ SPACING 0.00 SAMENET LAYER V12Cu STACK ;
+ SPACING 0.00 SAMENET LAYER CON STACK ;
+ ENCLOSURE BELOW 0.005 0.035 ;
+ ENCLOSURE ABOVE 0.005 0.035 ;
+END V34Cu
+
+LAYER M4Cu
+ TYPE ROUTING ;
+ WIDTH 0.1600 ;
+ AREA 0.0952 ;
+ SPACING 0.1600 ;
+ SPACING 0.1600 SAMENET ;
+ PITCH 0.3200 ;
+ DIRECTION VERTICAL ;
+ RESISTANCE RPERSQ 0.09000000 ;
+ THICKNESS 0.24000000 ;
+END M4Cu
+
+LAYER V45Cu
+ TYPE CUT ;
+ RESISTANCE 5.0 ;
+ SPACING 0.170 ;
+ SPACING 0.00 SAMENET LAYER V34Cu STACK ;
+ SPACING 0.00 SAMENET LAYER V23Cu STACK ;
+ SPACING 0.00 SAMENET LAYER V12Cu STACK ;
+ SPACING 0.00 SAMENET LAYER CON STACK ;
+ ENCLOSURE BELOW 0.005 0.035 ;
+ ENCLOSURE ABOVE 0.005 0.035 ;
+END V45Cu
+
+LAYER M5Cu
+ TYPE ROUTING ;
+ WIDTH 0.1600 ;
+ AREA 0.0832 ;
+ SPACING 0.1600 ;
+ SPACING 0.1600 SAMENET ;
+ PITCH 0.3200 ;
+ DIRECTION HORIZONTAL ;
+ RESISTANCE RPERSQ 0.09000000 ;
+ THICKNESS 0.24000000 ;
+END M5Cu
+
+
+LAYER VK01
+ TYPE CUT ;
+ RESISTANCE 8.0 ;
+ SPACING 0.170 ;
+ ENCLOSURE BELOW 0.005 0.035 ;
+ ENCLOSURE ABOVE 0.035 0.035 ;
+END VK01
+
+LAYER MTK1
+ TYPE ROUTING ;
+ DIRECTION VERTICAL ;
+ PITCH 0.48 ;
+ WIDTH 0.24 ;
+ AREA 0.28 ;
+ SPACING 0.24 ;
+ SPACING 0.48 RANGE 3 10000 ;
+ THICKNESS 0.46800000 ;
+ RESISTANCE RPERSQ 0.10 ;
+END MTK1
+
+LAYER VR01
+ TYPE CUT ;
+ RESISTANCE 7.0 ;
+ WIDTH 0.17 ;
+ SPACING 0.25 ;
+ ENCLOSURE BELOW 0.035 0.035 ;
+ ENCLOSURE ABOVE 0.095 0.095 ;
+END VR01
+
+LAYER MRF1
+ TYPE ROUTING ;
+ DIRECTION HORIZONTAL ;
+ PITCH 0.72 ;
+ WIDTH 0.36 ;
+ AREA 0.28 ;
+ SPACING 0.36 ;
+ SPACING 0.72 RANGE 3 10000 ;
+ RESISTANCE RPERSQ 0.048 ;
+ THICKNESS 0.84500000 ;
+END MRF1
+
+LAYER OGC
+ TYPE CUT ;
+ PROPERTY LEF58_TYPE "TYPE PASSIVATION ;" ;
+ SPACING 5 ;
+ WIDTH 5 ;
+END OGC
+
+VIARULE M1Cu_M2Cu GENERATE DEFAULT
+ LAYER M1Cu ;
+ ENCLOSURE 0.005 0.035 ;
+ LAYER M2Cu ;
+ ENCLOSURE 0.035 0.005 ;
+ LAYER V12Cu ;
+ RECT -0.075 -0.075 0.075 0.075 ;
+ SPACING 0.32 BY 0.32 ;
+END M1Cu_M2Cu
+
+VIARULE M2Cu_M3Cu GENERATE DEFAULT
+ LAYER M2Cu ;
+ ENCLOSURE 0.035 0.005 ;
+ LAYER M3Cu ;
+ ENCLOSURE 0.005 0.035 ;
+ LAYER V23Cu ;
+ RECT -0.075 -0.075 0.075 0.075 ;
+ SPACING 0.32 BY 0.32 ;
+END M2Cu_M3Cu
+
+VIARULE M3Cu_M4Cu GENERATE DEFAULT
+ LAYER M3Cu ;
+ ENCLOSURE 0.005 0.035 ;
+ LAYER M4Cu ;
+ ENCLOSURE 0.035 0.005 ;
+ LAYER V34Cu ;
+ RECT -0.075 -0.075 0.075 0.075 ;
+ SPACING 0.32 BY 0.32 ;
+END M3Cu_M4Cu
+
+VIARULE M4Cu_M5Cu GENERATE DEFAULT
+ LAYER M4Cu ;
+ ENCLOSURE 0.035 0.005 ;
+ LAYER M5Cu ;
+ ENCLOSURE 0.005 0.035 ;
+ LAYER V45Cu ;
+ RECT -0.075 -0.075 0.075 0.075 ;
+ SPACING 0.32 BY 0.32 ;
+END M4Cu_M5Cu
+
+VIARULE M5Cu_MTK1 GENERATE DEFAULT
+ LAYER M5Cu ;
+ ENCLOSURE 0.005 0.035 ;
+ LAYER MTK1 ;
+ ENCLOSURE 0.035 0.035 ;
+ LAYER VK01 ;
+ RECT -0.075 -0.075 0.075 0.075 ;
+ SPACING 0.32 BY 0.32 ;
+END M5Cu_MTK1
+
+
+VIARULE MTK1_MRF1 GENERATE DEFAULT
+ LAYER MTK1 ;
+ ENCLOSURE 0.035 0.035 ;
+ LAYER MRF1 ;
+ ENCLOSURE 0.095 0.095 ;
+ LAYER VR01 ;
+ RECT -0.085 -0.085 0.085 0.085 ;
+ SPACING 0.42 BY 0.42 ;
+END MTK1_MRF1
+
+VIA M1CuM2Cu_C DEFAULT
+ LAYER M2Cu ;
+ RECT -0.1100 -0.0800 0.1100 0.0800 ;
+ LAYER V12Cu ;
+ RECT -0.0750 -0.0750 0.0750 0.0750 ;
+ LAYER M1Cu ;
+ RECT -0.0800 -0.1100 0.0800 0.1100 ;
+END M1CuM2Cu_C
+
+
+VIA M1CuM2Cu_EW
+ LAYER M2Cu ;
+ RECT -0.1100 -0.0800 0.1100 0.0800 ;
+ LAYER V12Cu ;
+ RECT -0.0750 -0.0750 0.0750 0.0750 ;
+ LAYER M1Cu ;
+ RECT -0.1100 -0.0800 0.1100 0.0800 ;
+END M1CuM2Cu_EW
+
+
+
+VIA M1CuM2Cu_NS
+ LAYER M2Cu ;
+ RECT -0.0800 -0.1100 0.0800 0.1100 ;
+ LAYER V12Cu ;
+ RECT -0.0750 -0.0750 0.0750 0.0750 ;
+ LAYER M1Cu ;
+ RECT -0.0800 -0.1100 0.0800 0.1100 ;
+END M1CuM2Cu_NS
+
+
+
+VIA M2CuM3Cu_C
+ LAYER M3Cu ;
+ RECT -0.0800 -0.1100 0.0800 0.1100 ;
+ LAYER V23Cu ;
+ RECT -0.0750 -0.0750 0.0750 0.0750 ;
+ LAYER M2Cu ;
+ RECT -0.1100 -0.0800 0.1100 0.0800 ;
+END M2CuM3Cu_C
+
+VIA M3CuM4Cu_C
+ LAYER M4Cu ;
+ RECT -0.1100 -0.0800 0.1100 0.0800 ;
+ LAYER V34Cu ;
+ RECT -0.0750 -0.0750 0.0750 0.0750 ;
+ LAYER M3Cu ;
+ RECT -0.0800 -0.1100 0.0800 0.1100 ;
+END M3CuM4Cu_C
+
+VIA M4CuM5Cu_C
+ LAYER M5Cu ;
+ RECT -0.0800 -0.1100 0.0800 0.1100 ;
+ LAYER V45Cu ;
+ RECT -0.0750 -0.0750 0.0750 0.0750 ;
+ LAYER M4Cu ;
+ RECT -0.1100 -0.0800 0.1100 0.0800 ;
+END M4CuM5Cu_C
+
+
+VIA M5Cu_MTK1
+ LAYER M5Cu ;
+ RECT -0.080 -0.110 0.080 0.110 ;
+ LAYER VK01 ;
+ RECT -0.075 -0.075 0.075 0.075 ;
+ LAYER MTK1 ;
+ RECT -0.110 -0.110 0.110 0.110 ;
+END M5Cu_MTK1
+
+VIA MTK1_MRF1
+ LAYER MTK1 ;
+ RECT -0.120 -0.120 0.120 0.120 ;
+ LAYER VR01 ;
+ RECT -0.085 -0.085 0.085 0.085 ;
+ LAYER MRF1 ;
+ RECT -0.180 -0.180 0.180 0.180 ;
+END MTK1_MRF1
+
+
+
+SITE core12t
+ SYMMETRY Y ;
+ CLASS core ;
+ SIZE 0.32 BY 3.84 ;
+END core12t
+
+SITE core12tDH
+ SYMMETRY Y ;
+ CLASS core ;
+ SIZE 0.32 BY 7.68 ;
+END core12tDH
+
+END LIBRARY
diff --git a/docs/SKY90-FD_Design_Rule_Manual.docx b/docs/SKY90-FD_Design_Rule_Manual.docx
new file mode 100755
index 0000000..cdc30e3
--- /dev/null
+++ b/docs/SKY90-FD_Design_Rule_Manual.docx
Binary files differ
diff --git a/docs/SKY90-FD_Design_Rule_Manual.pdf b/docs/SKY90-FD_Design_Rule_Manual.pdf
new file mode 100644
index 0000000..161c537
--- /dev/null
+++ b/docs/SKY90-FD_Design_Rule_Manual.pdf
Binary files differ
diff --git a/examples/design.v b/examples/design.v
new file mode 100644
index 0000000..f8e0521
--- /dev/null
+++ b/examples/design.v
@@ -0,0 +1,2 @@
+module top;
+endmodule
\ No newline at end of file
diff --git a/examples/design_1/floorplan.tcl b/examples/design_1/floorplan.tcl
new file mode 100644
index 0000000..404b3e1
--- /dev/null
+++ b/examples/design_1/floorplan.tcl
@@ -0,0 +1,45 @@
+
+read_lef digital/sky90fd.lef
+read_verilog examples/design.v
+link_design "top"
+
+initialize_floorplan \
+ -die_area "0 0 3588 5188" \
+ -core_area "250 250 3338 4938" \
+ -site core12t
+
+make_tracks
+
+####################################
+# global connections
+####################################
+add_global_connection -net {VDD} -inst_pattern {.*} -pin_pattern {^VDD$} -power
+add_global_connection -net {VDD} -inst_pattern {.*} -pin_pattern {^VDDPE$}
+add_global_connection -net {VDD} -inst_pattern {.*} -pin_pattern {^VDDCE$}
+add_global_connection -net {VDD} -inst_pattern {.*} -pin_pattern {VPWR}
+add_global_connection -net {VDD} -inst_pattern {.*} -pin_pattern {VPB}
+add_global_connection -net {VSS} -inst_pattern {.*} -pin_pattern {^VSS$} -ground
+add_global_connection -net {VSS} -inst_pattern {.*} -pin_pattern {^VSSE$}
+add_global_connection -net {VSS} -inst_pattern {.*} -pin_pattern {VGND}
+add_global_connection -net {VSS} -inst_pattern {.*} -pin_pattern {VNB}
+global_connect
+####################################
+# voltage domains
+####################################
+set_voltage_domain -name {CORE} -power {VDD} -ground {VSS}
+####################################
+# standard cell grid
+####################################
+define_pdn_grid -name {grid} -voltage_domains {CORE}
+
+add_pdn_ring -grid grid -layer {M4Cu M5Cu} -widths 8.0 -spacings 5.0 -core_offset 5
+
+add_pdn_stripe -grid {grid} -layer {M1Cu} -width {0.16} -pitch {7.68} -offset {0} -followpins -extend_to_core_ring
+add_pdn_stripe -grid {grid} -layer {M4Cu} -width {8.0} -pitch {136.0} -snap_to_grid -extend_to_core_ring
+add_pdn_stripe -grid {grid} -layer {M5Cu} -width {8.0} -pitch {136.0} -snap_to_grid -extend_to_core_ring
+add_pdn_connect -grid {grid} -layers {M1Cu M4Cu}
+add_pdn_connect -grid {grid} -layers {M4Cu M5Cu}
+
+pdn::allow_repair_channels true
+
+pdngen
\ No newline at end of file
diff --git a/examples/design_2/floorplan.tcl b/examples/design_2/floorplan.tcl
new file mode 100644
index 0000000..e827c28
--- /dev/null
+++ b/examples/design_2/floorplan.tcl
@@ -0,0 +1,45 @@
+
+read_lef digital/sky90fd.lef
+read_verilog examples/design.v
+link_design "top"
+
+initialize_floorplan \
+ -die_area "0 0 3588 5188" \
+ -core_area "250 250 3338 4938" \
+ -site core12t
+
+make_tracks
+
+####################################
+# global connections
+####################################
+add_global_connection -net {VDD} -inst_pattern {.*} -pin_pattern {^VDD$} -power
+add_global_connection -net {VDD} -inst_pattern {.*} -pin_pattern {^VDDPE$}
+add_global_connection -net {VDD} -inst_pattern {.*} -pin_pattern {^VDDCE$}
+add_global_connection -net {VDD} -inst_pattern {.*} -pin_pattern {VPWR}
+add_global_connection -net {VDD} -inst_pattern {.*} -pin_pattern {VPB}
+add_global_connection -net {VSS} -inst_pattern {.*} -pin_pattern {^VSS$} -ground
+add_global_connection -net {VSS} -inst_pattern {.*} -pin_pattern {^VSSE$}
+add_global_connection -net {VSS} -inst_pattern {.*} -pin_pattern {VGND}
+add_global_connection -net {VSS} -inst_pattern {.*} -pin_pattern {VNB}
+global_connect
+####################################
+# voltage domains
+####################################
+set_voltage_domain -name {CORE} -power {VDD} -ground {VSS}
+####################################
+# standard cell grid
+####################################
+define_pdn_grid -name {grid} -voltage_domains {CORE}
+
+add_pdn_ring -grid grid -layer {M4Cu M5Cu} -widths 8.0 -spacings 5.0 -core_offset 5
+
+add_pdn_stripe -grid {grid} -layer {M1Cu} -width {0.16} -pitch {7.68} -offset {0} -followpins -extend_to_core_ring
+add_pdn_stripe -grid {grid} -layer {M4Cu} -width {4.0} -pitch {68.0} -snap_to_grid -extend_to_core_ring
+add_pdn_stripe -grid {grid} -layer {M5Cu} -width {4.0} -pitch {68.0} -snap_to_grid -extend_to_core_ring
+add_pdn_connect -grid {grid} -layers {M1Cu M4Cu}
+add_pdn_connect -grid {grid} -layers {M4Cu M5Cu}
+
+pdn::allow_repair_channels true
+
+pdngen
\ No newline at end of file
diff --git a/libraries/sky90fd_fd_pr/cells/AllCellsMin.gds b/libraries/sky90fd_fd_pr/cells/AllCellsMin.gds
new file mode 100644
index 0000000..be70be1
--- /dev/null
+++ b/libraries/sky90fd_fd_pr/cells/AllCellsMin.gds
Binary files differ
diff --git a/libraries/sky90fd_fd_pr/cells/AllCellsMinNF2.gds b/libraries/sky90fd_fd_pr/cells/AllCellsMinNF2.gds
new file mode 100644
index 0000000..7898370
--- /dev/null
+++ b/libraries/sky90fd_fd_pr/cells/AllCellsMinNF2.gds
Binary files differ
diff --git a/libraries/sky90fd_fd_pr/cells/AllCellsMinPlus.gds b/libraries/sky90fd_fd_pr/cells/AllCellsMinPlus.gds
new file mode 100644
index 0000000..733eb9e
--- /dev/null
+++ b/libraries/sky90fd_fd_pr/cells/AllCellsMinPlus.gds
Binary files differ
diff --git a/libraries/sky90fd_fd_pr/klayout/klayout_layer_generator.py b/libraries/sky90fd_fd_pr/klayout/klayout_layer_generator.py
new file mode 100644
index 0000000..fca9eee
--- /dev/null
+++ b/libraries/sky90fd_fd_pr/klayout/klayout_layer_generator.py
@@ -0,0 +1,119 @@
+import csv
+import os
+
+from klayout.lay import LayoutView
+from klayout.lay import LayerPropertiesNode
+
+colors = [
+ 0x2f4f4f,
+ 0x556b2f,
+ 0x8b4513,
+ 0x6b8e23,
+ 0x2e8b57,
+ 0x228b22,
+ 0x800000,
+ 0x708090,
+ 0x483d8b,
+ 0xbc8f8f,
+ 0xbdb76b,
+ 0xcd853f,
+ 0x4682b4,
+ 0x000080,
+ 0x9acd32,
+ 0x20b2aa,
+ 0xcd5c5c,
+ 0x32cd32,
+ 0xdaa520,
+ 0x7f007f,
+ 0x8fbc8f,
+ 0x9932cc,
+ 0xff0000,
+ 0xff8c00,
+ 0xffd700,
+ 0xc71585,
+ 0x0000cd,
+ 0x00ff00,
+ 0x00fa9a,
+ 0xe9967a,
+ 0xdc143c,
+ 0x00ffff,
+ 0x00bfff,
+ 0x0000ff,
+ 0xa020f0,
+ 0xadff2f,
+ 0xb0c4de,
+ 0xff7f50,
+ 0xff00ff,
+ 0xdb7093,
+ 0xffff54,
+ 0x6495ed,
+ 0xdda0dd,
+ 0x90ee90,
+ 0x7b68ee,
+ 0xf5deb3,
+ 0xafeeee,
+ 0xee82ee,
+ 0x7fffd4,
+ 0xff69b4,
+ 0xffc0cb,
+]
+
+
+def parse_layer_info():
+ dict = {}
+ layer_map = os.path.join(os.path.dirname(
+ __file__), '../sky90fd.layermap.csv')
+ with open(layer_map, newline='') as csvfile:
+ layer_map_reader = csv.reader(csvfile, delimiter=',', quotechar='|')
+ next(layer_map_reader)
+ for row in layer_map_reader:
+ layer_name = row[0]
+ layer_datatype = row[2]
+ key = (layer_name, layer_datatype)
+ if key in dict:
+ dict[key].append(row)
+ else:
+ dict[key] = [row]
+ return dict
+
+
+def create_klayout_hierachy(layout_view):
+ dict = parse_layer_info()
+ i = 0
+ for ((layer_name, layer_number), layers) in dict.items():
+ current_color = colors[i % len(colors)]
+ brightness = 50 * (i // len(colors))
+
+ layout_view_end = layout_view.end_layers()
+ parent_layer = LayerPropertiesNode()
+ parent_layer.name = "{} - {}".format(layer_number, layer_name)
+ parent_layer.source = "{}/*@*".format(layer_number)
+
+ j = 3
+ for layer in layers:
+ child_layer = LayerPropertiesNode()
+ child_layer.name = "{}.{}".format(layer[0], layer[1])
+ child_layer.source_layer = int(layer[2])
+ child_layer.source_datatype = int(layer[3])
+ child_layer.fill_color = current_color
+ child_layer.dither_pattern = j
+ if len(layer) == 6:
+ child_layer.fill_color = int(layer[4], base=16)
+ child_layer.dither_pattern = int(layer[5])
+
+ parent_layer.add_child(child_layer)
+ j = j + 1
+
+ layout_view.insert_layer(layout_view_end, parent_layer)
+ i = i + 1
+
+
+def main():
+ editable = True
+ layout_view = LayoutView(editable)
+ create_klayout_hierachy(layout_view)
+ layout_view.save_layer_props("sky90fd.lyp")
+
+
+if __name__ == "__main__":
+ main()
diff --git a/libraries/sky90fd_fd_pr/klayout/sky90fd.lyp b/libraries/sky90fd_fd_pr/klayout/sky90fd.lyp
new file mode 100644
index 0000000..4d31872
--- /dev/null
+++ b/libraries/sky90fd_fd_pr/klayout/sky90fd.lyp
@@ -0,0 +1,5980 @@
+<?xml version="1.0" encoding="utf-8"?>
+<layer-properties>
+ <properties>
+ <expanded>false</expanded>
+ <frame-color/>
+ <fill-color/>
+ <frame-brightness>0</frame-brightness>
+ <fill-brightness>0</fill-brightness>
+ <dither-pattern/>
+ <line-style/>
+ <valid>true</valid>
+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>1 - ACT</name>
+ <source>1/*@*</source>
+ <group-members>
+ <expanded>false</expanded>
+ <frame-color/>
+ <fill-color>#2f4f4f</fill-color>
+ <frame-brightness>0</frame-brightness>
+ <fill-brightness>0</fill-brightness>
+ <dither-pattern>I3</dither-pattern>
+ <line-style/>
+ <valid>true</valid>
+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>ACT.mask</name>
+ <source>1/0@*</source>
+ </group-members>
+ <group-members>
+ <expanded>false</expanded>
+ <frame-color/>
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+ <name>POLY.fill</name>
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+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.experimental</name>
+ <source>12/2@*</source>
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+ <fill-color>#800000</fill-color>
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+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.net</name>
+ <source>12/4@*</source>
+ </group-members>
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+ <fill-color>#800000</fill-color>
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+ <line-style/>
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+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.pin</name>
+ <source>12/5@*</source>
+ </group-members>
+ <group-members>
+ <expanded>false</expanded>
+ <frame-color/>
+ <fill-color>#800000</fill-color>
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+ <line-style/>
+ <valid>true</valid>
+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.label</name>
+ <source>12/6@*</source>
+ </group-members>
+ <group-members>
+ <expanded>false</expanded>
+ <frame-color/>
+ <fill-color>#800000</fill-color>
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+ <fill-brightness>0</fill-brightness>
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+ <line-style/>
+ <valid>true</valid>
+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.nofill</name>
+ <source>12/9@*</source>
+ </group-members>
+ <group-members>
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+ <frame-color/>
+ <fill-color>#800000</fill-color>
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+ <line-style/>
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+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.noOpc</name>
+ <source>12/10@*</source>
+ </group-members>
+ <group-members>
+ <expanded>false</expanded>
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+ <fill-color>#800000</fill-color>
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+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.text</name>
+ <source>12/11@*</source>
+ </group-members>
+ <group-members>
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+ <frame-color/>
+ <fill-color>#800000</fill-color>
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+ <fill-brightness>0</fill-brightness>
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+ <line-style/>
+ <valid>true</valid>
+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.autofill</name>
+ <source>12/12@*</source>
+ </group-members>
+ <group-members>
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+ <frame-color/>
+ <fill-color>#800000</fill-color>
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+ <fill-brightness>0</fill-brightness>
+ <dither-pattern>I14</dither-pattern>
+ <line-style/>
+ <valid>true</valid>
+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.resistor</name>
+ <source>12/13@*</source>
+ </group-members>
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+ <line-style/>
+ <valid>true</valid>
+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.drcwaive</name>
+ <source>12/16@*</source>
+ </group-members>
+ <group-members>
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+ <fill-color>#800000</fill-color>
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+ <fill-brightness>0</fill-brightness>
+ <dither-pattern>I16</dither-pattern>
+ <line-style/>
+ <valid>true</valid>
+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.opc</name>
+ <source>12/20@*</source>
+ </group-members>
+ <group-members>
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+ <fill-color>#800000</fill-color>
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+ <line-style/>
+ <valid>true</valid>
+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.maskAdd</name>
+ <source>12/21@*</source>
+ </group-members>
+ <group-members>
+ <expanded>false</expanded>
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+ <fill-color>#800000</fill-color>
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+ <line-style/>
+ <valid>true</valid>
+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.maskDrop</name>
+ <source>12/22@*</source>
+ </group-members>
+ <group-members>
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+ <frame-color/>
+ <fill-color>#800000</fill-color>
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+ <line-style/>
+ <valid>true</valid>
+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>POLY.sraf</name>
+ <source>12/23@*</source>
+ </group-members>
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+ <properties>
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+ <line-style/>
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+ <visible>true</visible>
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+ <width/>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>13 - FLGCHAN</name>
+ <source>13/*@*</source>
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+ <expanded>false</expanded>
+ <frame-color/>
+ <fill-color>#708090</fill-color>
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+ <dither-pattern>I3</dither-pattern>
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+ <visible>true</visible>
+ <transparent>false</transparent>
+ <width/>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>FLGCHAN.drawing</name>
+ <source>13/44@*</source>
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+ <visible>true</visible>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>FLGCHAN.drcwaive</name>
+ <source>13/16@*</source>
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+ <width/>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>15 - NSD</name>
+ <source>15/*@*</source>
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+ <frame-color/>
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+ <transparent>false</transparent>
+ <width/>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>NSD.mask</name>
+ <source>15/0@*</source>
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+ <dither-pattern>I4</dither-pattern>
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+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>NSD.drawing</name>
+ <source>15/44@*</source>
+ </group-members>
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+ <dither-pattern>I5</dither-pattern>
+ <line-style/>
+ <valid>true</valid>
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+ <transparent>false</transparent>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>NSD.drcwaive</name>
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+ </properties>
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+ <width/>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>16 - PSD</name>
+ <source>16/*@*</source>
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+ <expanded>false</expanded>
+ <frame-color/>
+ <fill-color>#bc8f8f</fill-color>
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+ <name>PSD.mask</name>
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+ <animation>0</animation>
+ <name>PSD.drawing</name>
+ <source>16/44@*</source>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>PSD.drcwaive</name>
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+ <animation>0</animation>
+ <name>17 - NOSDX</name>
+ <source>17/*@*</source>
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+ <expanded>false</expanded>
+ <frame-color/>
+ <fill-color>#bdb76b</fill-color>
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+ <name>NOSDX.drawing</name>
+ <source>17/44@*</source>
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+ <dither-pattern>I4</dither-pattern>
+ <line-style/>
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+ <width/>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>NOSDX.drcwaive</name>
+ <source>17/16@*</source>
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+ </properties>
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+ <animation>0</animation>
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+ <name>19 - THKOX</name>
+ <source>19/*@*</source>
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+ <frame-color/>
+ <fill-color>#4682b4</fill-color>
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+ <animation>0</animation>
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+ <name>THKOX.drawing</name>
+ <source>19/44@*</source>
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+ <name>20 - NOSLC</name>
+ <source>20/*@*</source>
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+ <frame-color/>
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+ <animation>0</animation>
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+ </group-members>
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+ <xfill>false</xfill>
+ <animation>0</animation>
+ <name>NOSLC.drawing</name>
+ <source>20/44@*</source>
+ </group-members>
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+ <dither-pattern>I5</dither-pattern>
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+ <animation>0</animation>
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+ <animation>0</animation>
+ <name>23 - XN</name>
+ <source>23/*@*</source>
+ <group-members>
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+ <dither-pattern>I3</dither-pattern>
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+ <transparent>false</transparent>
+ <width/>
+ <marked>false</marked>
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+ <name>M1Cu.label</name>
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diff --git a/libraries/sky90fd_fd_pr/models/models.scs b/libraries/sky90fd_fd_pr/models/models.scs
new file mode 100755
index 0000000..8e0668b
--- /dev/null
+++ b/libraries/sky90fd_fd_pr/models/models.scs
@@ -0,0 +1,3274 @@
+***********************************************************
+* SKY90-FD FDSOI Spice Models
+* Generating model files for flow : copper7lm
+* Model Type: general models
+* Version: 1.09.03C
+* Date: 08/22/2022
+***********************************************************
+*
+*
+**************************************************************
+* Global parameters, functions, and Monte Carlo
+* Corner parameters descriptions: Corner_Parameters.html
+**************************************************************
+
+***********************************
+* Global functions
+* ---------------------------------
+
+parameters swr_tox_lv = sw_tox_lv / 1.8e-9
+parameters swr_tox_hv = sw_tox_hv / 6.2e-9
+
+* -------- Calculated Source/Drain instance parameters -----
+real swf_fet_as (real nf, real w) {
+ return ( (nf-1)*0.25u + 2*0.225u) * w * 0.5
+}
+real swf_fet_ps (real nf, real w) {
+ return (nf-1)*0.25u + 2*0.225u + w*(nf+1)
+}
+* --- SBC Only
+real swf_fet_sbc_as (real nf, real w) {
+ return ( (nf-1)*0.25u + 2*0.225u) * (w+0.15u) * 0.5
+}
+real swf_fet_sbc_ps (real nf, real w) {
+ return (nf-1)*0.25u + 2*0.225u + (w+0.15u)*(nf+1)
+}
+
+* -------- T-gate and H-gate instance parameters -----
+real swf_psbcp (real nf, real nbc) {
+ return ( (nf-1)*0.25u + 2*0.225u ) * 0.5 * nbc
+}
+real swf_agbcp (real nf, real l, real nbc) {
+ return ((nf-1)*0.25u + nf*l + 2*0.225u) * 0.075u * nbc
+}
+real swf_aebcp (real nf, real l, real nbc) {
+ return ((nf-1)*0.25u + nf*l + 2*0.225u) * 0.375u * nbc
+}
+* --- SBC Only
+real swf_psbcp_sbc (real nf) {
+ return ( floor(nf/2)+1 ) * 0.225u
+}
+real swf_agbcp_sbc (real nf) {
+ return 2*nf*0.075u*0.15u
+}
+real swf_aebcp_sbc (real nf) {
+ return (floor(nf/2) + 1)*2*0.375u*0.15u
+}
+
+********************************************************
+******************************************************************
+******************************************************************
+
+subckt cap_metals pos neg
+
+parameters l nf toplev botlev
+
+//numlayers=(m1_used+m2_used+m3_used+m4_used+m5_used)
+parameters m1_used=(botlev<=1 && toplev>=1)
+parameters m2_used=(botlev<=2 && toplev>=2)
+parameters m3_used=(botlev<=3 && toplev>=3)
+parameters m4_used=(botlev<=4 && toplev>=4)
+parameters m5_used=(botlev<=5 && toplev>=5)
+
+//"IsM2Bot" is 1 if M2 is the bottom layer of the stack
+//"IsM2Shielded" is 1 if M2 is in the stack, but is not the bottom metal
+parameters ism1bot=(botlev==1)
+parameters ism2bot=(botlev==2)
+parameters ism3bot=(botlev==3)
+parameters ism4bot=(botlev==4)
+parameters ism5bot=(botlev==5)
+
+parameters ism2shielded=(botlev<2 && toplev>=2)
+parameters ism3shielded=(botlev<3 && toplev>=3)
+parameters ism4shielded=(botlev<4 && toplev>=4)
+parameters ism5shielded=(botlev<5 && toplev>=5)
+
+parameters c_allfingers=1e-15*nf*(m1_used+m2_used+m3_used+m4_used+m5_used)*(log(pow(2.71828,(l/1e-6))-1+exp(3.29))-2.95)*0.0771
+//parameters c_allfingers=1e-15*nf*(m1_used+m2_used+m3_used+m4_used+m5_used)*(log(exp(l/1e-6)-1+exp(3.29))-2.95)*0.0771
+parameters c_pos=1e-15*nf*(l/1e-6 + 2.5)*(ism1bot*0.015 + ism2bot*0.0095 + ism3bot*0.0075 + ism4bot*0.0065 + ism5bot*0.0059 + ism2shielded*0.0027 + ism3shielded*0.0043 + ism4shielded*0.0040 + ism5shielded*0.0036)
+parameters c_neg=c_pos
+
+cdevice (pos neg) capacitor c=c_allfingers*sw_cap_metals
+cc_pos (pos 0) capacitor c=c_pos
+cc_neg (neg 0) capacitor c=c_neg
+
+ends cap_metals
+
+
+******************************************************************
+******************************************************************
+
+subckt cap_mim pos neg
+
+parameters w l
+
+cap_mim (pos neg) capacitor c=sw_cap_mim_ca * (w+sw_cap_mim_dw) * (l+sw_cap_mim_dw)
+
+ends cap_mim
+
+
+******************************************************************
+******************************************************************
+// -----------------------------------------------------------
+// Forward bias diode model
+// -----------------------------------------------------------
+
+subckt diode_nplus_vtp ( a c )
+ parameters w = 0.8u
++ swx_is = exp(35.5*(1-sw_res_nplus_poly)*0.2) // 35.5 is q/(nkT)
+
+d0 ( a c) diode_main area=w
+d1 ( a c) diode_recombine area=w
+d2 ( c a) diode_reverse_leak area=w
+
+model diode_main diode
+//*** Flag Parameter ***
++level = 1
+//*** Junction Diode Parameter ***
++is = 1.130276E-13 * swx_is
++n = 1.093706
+//*** Breakdown Parameter ***
++vb = 5.725628 ibv = 1E-3 nz = 9.077509
+//*** Parasitic Resistance Parameter ***
++rs = 2.806622E-5
+//*** Temperature Effects Parameter ***
++tlev = 0 tlevc = 0 eg = 1.11705
++xti = 3.637179 tbv1 = 0 tnom = 25
++trs = 1.206836E-3 cta = 0 ctp = 0
++pta = 0 ptp = 0
+//*** Junction Diode Model Control Parameter ***
++imax = 1E12
+//*** Capacitance Parameter ***
++cjo = 1E-10*3.14 / sw_rdsw_pmos_lowvt vj = 0.6 mj = 0.5
++cjsw = 0 vjsw = 0.8 mjsw = 0.33
++fc = 0.5
+
+// ***********************
+
+model diode_recombine diode
+//*** Flag Parameter ***
++level = 1
+//*** Junction Diode Parameter ***
++is = 6.694065E-9 n = 2.147432
+//*** Breakdown Parameter ***
++bv = 6 ibv = 0.01 nz = 21.448254
+//*** Parasitic Resistance Parameter ***
++rs = 4.730854
+//*** Temperature Effects Parameter ***
++tlev = 2 eg = 0.449216 gap1 = 8.693526E-3
++gap2 = 657.504199 xti = 0.1711 tbv1 = 4.661495E-3
++tnom = 25
+// trs = -7.32374E-2
+//*** Junction Diode Model Control Parameter ***
++imax = 1e12
+
+// ***********************
+
+model diode_reverse_leak diode
+//*** Junction Diode Parameter ***
++is = 1.136472E-8 n = 2.543035
+//*** Parasitic Resistance Parameter ***
++rs = 267.790479 * sw_rdsw_pmos_lowvt
+//*** Temperature Effects Parameter ***
++eg = 0.851245 xti = 1.870884 tnom = 25
+//+trs = -7.622322E-3
+//+minr = 1
+//*** Junction Diode Model Control Parameter ***
++imax = 1e12
+
+ends diode_nplus_vtp
+
+******************************************************************
+******************************************************************
+// -----------------------------------------------------------
+// Forward bias diode model
+// -----------------------------------------------------------
+
+subckt diode_pplus_vtn ( a c )
+ parameters w = 0.8u
++ swx_is = exp(35.5*(1-sw_res_pplus_poly)*0.2) // 35.5 is q/(nkT)
+
+d0 ( a c) diode_main area=w
+d1 ( a c) diode_recombine area=w
+d2 ( c a) diode_reverse_leak area=w
+
+model diode_main diode
+//*** Flag Parameter ***
++level = 1
+//*** Junction Diode Parameter ***
++is = 9.25927E-14 * swx_is n = 1.070162
+//*** Breakdown Parameter ***
++vb = 5.725628 ibv = 1E-3 nz = 9.077509
+//*** Parasitic Resistance Parameter ***
++rs = 3.329246E-5
+//*** Temperature Effects Parameter ***
++tlev = 0 tlevc = 0 eg = 1.106282
++xti = 3.943658 tbv1 = 0 tnom = 25
++trs = 1.508794E-3 cta = 0 ctp = 0
++pta = 0 ptp = 0
+//*** Junction Diode Model Control Parameter ***
++imax = 1E12
+//*** Capacitance Parameter ***
++cjo = 1E-10*3.14 / sw_rdsw_nmos_lowvt vj = 0.6 mj = 0.5
++cjsw = 0 vjsw = 0.8 mjsw = 0.33
++fc = 0.5
+
+// ***********************
+
+model diode_recombine diode
+//*** Flag Parameter ***
++level = 1 minr = 1E-3
+//*** Junction Diode Parameter ***
++is = 3.43374E-8 n = 2.647693
+//*** Breakdown Parameter ***
++bv = 7.5 ibv = 0.01 nz = 1
+//*** Parasitic Resistance Parameter ***
++rs = 34.156126
+//*** Temperature Effects Parameter ***
++tlev = 2 eg = 0.262786 gap1 = 1.08734E-2
++gap2 = 867.969167 xti = 0.31759 tbv1 = 0
++tnom = 25
+// trs = -0.124572
+//*** Junction Diode Model Control Parameter ***
++imax = 1e12
+
+// ***********************
+
+model diode_reverse_leak diode
+//*** Junction Diode Parameter ***
++is = 1.202149E-14 n = 0.500069 ikf = 5.16894E-2
+//*** Parasitic Resistance Parameter ***
++rs = 5.892906E3 * sw_rdsw_nmos_lowvt
+//*** Temperature Effects Parameter ***
++eg = 0.679891 xti = 0.645549 tnom = 25
+// +trs = -1.199791E-3
+//*** Junction Diode Model Control Parameter ***
++imax = 1e12
+
+ends diode_pplus_vtn
+
+******************************************************************
+******************************************************************
+
+
+inline subckt base_nmos_1p2v_highvt_bodytie (d g s e p)
+
+parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
++ swx_align_poly
+
+base_nmos_1p2v_highvt_bodytie (d g s e p) nmos_1p2v_highvt_bodytie_model
++ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model nmos_1p2v_highvt_bodytie_model bsimsoi type=n
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.034 bdos = 0.6
+***** Vth Related Parameter ***
++vth0 = 0.46 + sw_vth0_nmos_highvt k1 = 0.2 k1w1 = 0
++k1w2 = 0 k2 = -0.15 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 1.7E-7 dvt0 = 2.2 dvt1 = 0.53
++dvt2 = -0.032 dvt0w = -swx_align_poly*1.14e7*0.7 dvt1w = 0
++dvt2w = 0 nlx = 1.74E-7
+***** Mobility Related Parameter ***
++u0 = 100*sw_u0_nmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 4.4E4 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_nmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.02628 nfactor = 0.6 eta0 = 0.0736 * 0.85
++etab = 0 dsub = 0.05 cit = 0
++cdsc = 9E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = 1.6E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0 lpclm = 0 wpclm = 0.25
++pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 7.5E-3
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E8
++cgidl = 0 egidl = 0.72 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8
++iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4
++istun = 1E-5 ln = 1E-11 vrec0 = 0.075
++vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7
++vabjt = 9.7 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 1.7 lminv = -0.017 wminv = 0.118
+***** Gate-to-body tunneling parameters ***
++aigc = 0.01596 bigc = 0 cigc = 0.0273
++aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2
++nigc = 4 pigcd = 0.5 dlcig = 1E-9
++ntox = 1.024 toxref = 1.8E-9 ebg = 1.15
++alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200
++vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06
++vgb2 = 200 vecb = 3
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6
++cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.35E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++voffcv = -0.2
+***** Temperature coefficient ***
++tnom = 22 ute = -1.5 kt1 = -0.165
++kt1l = 0 kt2 = 0.022 ua1 = 0
++ub1 = 0 uc1 = -5.6E-11 at = 100
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+***** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+***** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++minvcv = 0
++vsdfb = -5.0
++vsdth = -3.0
++csdmin = 1.0e-4
+
+ends base_nmos_1p2v_highvt_bodytie
+******************************************************************
+******************************************************************
+
+inline subckt base_nmos_1p2v_lowvt_bodytie (d g s e p)
+
+parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
++ swx_align_poly nbc
+
+base_nmos_1p2v_lowvt_bodytie (d g s e p) base_nmos_1p2v_lowvt_bodytie_model
++ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model base_nmos_1p2v_lowvt_bodytie_model bsimsoi type=n
++ wmax = 5.1u lmax = 0.4u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.034 bdos = 0.6
+***** Vth Related Parameter ***
++vth0 = 0.35 + sw_vth0_nmos_lowvt - 0.008 k1 = 0.2 k1w1 = 0
++k1w2 = 0 k2 = 0.2245 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 1.7E-7 dvt0 = 3.3 dvt1 = 0.53
++dvt2 = -0.032 dvt0w = -swx_align_poly*1.14e7 dvt1w = 0
++dvt2w = 0 nlx = 1.74E-7
+***** Mobility Related Parameter ***
++u0 = 132 * sw_u0_nmos_lowvt * 1.2 ua = 0 ub = 0
++uc = 0 vsat = 4.4E4 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60 prwb = 0
++prwg = 0 wr = 0.9
+***** Subthreshold Related Parameter ***
++voff = -0.0495 nfactor = 0.714 eta0 = 0.01
++etab = 0 dsub = 0.05 cit = 0
++cdsc = 9E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = 1E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -1.6245E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 6.6 lpclm = 0 wpclm = 0.01
++pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 0.117575
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E8
++cgidl = 0 egidl = 0.72 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8
++iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4
++istun = 1E-5 ln = 1E-11 vrec0 = 0.075
++vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7
++vabjt = 9.7 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 1.649 lminv = -0.01598 wminv = 0.177
+***** Gate-to-body tunneling parameters ***
++aigc = 0.01596 bigc = 0 cigc = 0.0273
++aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2
++nigc = 4 pigcd = 0.5 dlcig = 1E-9
++ntox = 1.024 toxref = 1.8E-9 ebg = 1.15
++alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200
++vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06
++vgb2 = 200 vecb = 3
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_lowvt mjswg = 0.6
++cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.35E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++voffcv = -0.2
+***** Temperature coefficient ***
++tnom = 22 ute = -1.5 kt1 = -0.165
++kt1l = 0 kt2 = 0.022 ua1 = 0
++ub1 = 0 uc1 = -5.6E-11 at = 100
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+***** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+***** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++minvcv = 0
++vsdfb = -5.0
++vsdth = -3.0
++csdmin = 1.0e-4
+
+ends base_nmos_1p2v_lowvt_bodytie
+
+******************************************************************
+******************************************************************
+
+inline subckt base_pmos_1p2v_highvt_bodytie (d g s e p)
+
+parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
++ swx_align_poly
+
+base_pmos_1p2v_highvt_bodytie (d g s e p) pmos_1p2v_highvt_bodytie_model
++ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model pmos_1p2v_highvt_bodytie_model bsimsoi
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 type=p
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+***** Vth Related Parameter ***
++vth0 = -0.46 + sw_vth0_pmos_highvt - 0.1 k1 = 0.01 k1w1 = 0
++k1w2 = 0 k2 = 0 k3 = -4
++k3b = 0 kb1 = 0 w0 = 0
++lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09
++dvt1 = 0.214 dvt2 = 0 dvt0w = -swx_align_poly*1.14e7
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 0
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+***** Mobility Related Parameter ***
++u0 = 25*sw_u0_pmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 1E6 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_pmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 2.21 eta0 = 0.08
++etab = -1E-3 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = -1E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 3E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0.675 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E9
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
+***** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 9E-3 bigsd = 0 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++ntox = 4.5 toxref = 1.8E-9 ebg = 1.2
++alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300
++vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05
++vgb2 = 17 vecb = 0.026
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_highvt mjswg = 0.5
++cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1
++cf = 0 clc = 1E-8 cle = 0
++dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++acde = 1 moin = 500 voffcv = -0.5
+***** Temperature coefficient ***
++tnom = 22 ute = -0.73 kt1 = -0.042
++kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0
++ub1 = 0 uc1 = 0 at = 3.4E4
++tcjswg = 0 cth0 = 1E-6 prt = 0
++rth0 = 0.2 ntrecf = 0 ntrecr = 0
++xbjt = 1.15 xdif = 1.11 xrec = 0.9
++xtun = 0 wth0 = 4E-6
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+***** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++vsdfb = -4.0
++vsdth = -2.0
++csdmin = 1.0e-4
+
+
+ends base_pmos_1p2v_highvt_bodytie
+******************************************************************
+******************************************************************
+
+inline subckt base_pmos_1p2v_lowvt_bodytie (d g s e p)
+
+parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
++ swx_align_poly nbc
+
+base_pmos_1p2v_lowvt_bodytie (d g s e p) base_pmos_1p2v_lowvt_bodytie_model
++ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model base_pmos_1p2v_lowvt_bodytie_model bsimsoi type=p
++ wmax = 5.1u lmax = 0.4u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+***** Vth Related Parameter ***
++vth0 = -0.367 + sw_vth0_pmos_lowvt - 0.028 k1 = 0.01 k1w1 = 0
++k1w2 = 0 k2 = -0.12 k3 = -4
++k3b = 0 kb1 = 0 w0 = 0
++lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09
++dvt1 = 0.214 dvt2 = 0 dvt0w = -swx_align_poly*7.0e6
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 0
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+***** Mobility Related Parameter ***
++u0 = 44*(sw_u0_pmos_lowvt**0.8) * 1.3 ua = 0 ub = 0
++uc = 0 vsat = 1E6*5 * 2 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_pmos_lowvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 2.21 eta0 = 0.0276
++etab = -1E-3 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = -2.943E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -5.08E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0.675 * 2 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E9
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
+***** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 9E-3 bigsd = 0 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++ntox = 4.5 toxref = 1.8E-9 ebg = 1.2
++alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300
++vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05
++vgb2 = 17 vecb = 0.026
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_lowvt mjswg = 0.5
++cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1
++cf = 0 clc = 1E-8 cle = 0
++dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++acde = 1 moin = 500 voffcv = -0.5
+***** Temperature coefficient ***
++tnom = 22 ute = -0.73 kt1 = -0.042
++kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0
++ub1 = 0 uc1 = 0 at = 3.4E4
++tcjswg = 0 cth0 = 1E-6 prt = 0
++rth0 = 0.2 ntrecf = 0 ntrecr = 0
++xbjt = 1.15 xdif = 1.11 xrec = 0.9
++xtun = 0 wth0 = 4E-6
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+***** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++vsdfb = -4.0
++vsdth = -2.0
++csdmin = 1.0e-4
+
+ends base_pmos_1p2v_lowvt_bodytie
+******************************************************************
+******************************************************************
+
+
+inline subckt nmos_1p2v_highvt_hg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 2
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+nmos_1p2v_highvt_hg (d g s b x) base_nmos_1p2v_highvt_hg
++ l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc
++ w=(w-2*sw_dvar_polycd) * nf
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_nmos_highvt + 0.1
+
+
+model base_nmos_1p2v_highvt_hg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 minr = 1E-60 type = n
+//*** Geometry Range Parameter ***
++lmax = 6E-7 wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.5838 bdos = 1.2
+//*** Vth Related Parameter ***
++vth0 = 0.468 k1 = 0.145671 k1w1 = 0
++k1w2 = 0 k2 = -0.203174 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 9.8E-8 dvt0 = 0.8815 dvt1 = 0.49265
++dvt2 = -0.032 dvt0w = 0.032 dvt1w = 0
++dvt2w = 0 dvtp0 = 1.3E-7 dvtp1 = 0
++dvtp2 = 0 dvtp3 = 0 dvtp4 = 0
++nlx = 1.74E-7
+//*** Mobility Related Parameter ***
++u0 = 129 * sw_u0_nmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 3.7E4 lvsat = -396
++wvsat = 2.304E3 a0 = 0.22824 ags = 0
++b0 = 0 b1 = 0 keta = 0
++ketas = 0 a1 = 0 a2 = 0.99
++rdsw = 60 * sw_rdsw_nmos_lowvt prwb = 0 prwg = 0
++wr = 0.85
+//*** Subthreshold Related Parameter ***
++voff = -3.47449E-2 lvoff = -3.1536E-3 wvoff = 3.942E-3
++nfactor = 1.2 eta0 = 1.97064E-2 etab = 0
++dsub = 0.0305 cit = 0 cdsc = 6.57E-3
++cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = 1E-9 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 1.7 lpclm = 0 wpclm = 0.25
++pdiblc1 = 0.01 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 7.5E-3
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 3.5E-13 lagidl = -1E-14
++wagidl = 3E-14 bgidl = 1E8 cgidl = 0
++egidl = 0.36 ntun = 10 ndiode = 1.5
++ndioded = 1.5 nrecf0 = 1.6 nrecf0d = 1.6
++nrecr0 = 10 nrecr0d = 10 isbjt = 1E-5
++idbjt = 1E-5 isdif = 5.13E-8 iddif = 4.5E-8
++isrec = 1E-4 idrec = 1E-4 istun = 1E-5
++ln = 1E-11 vrec0 = 0.075 vtun0 = 0
++nbjt = 1.215 lbjt0 = 2E-7 vabjt = 9.7
++aely = 0 ahli = 1E-15 rbody = 10
++rbsh = 100 rhalo = 1E15 minv = 1.088
++lminv = -0.017 wminv = 0.118
+//*** Gate-to-body tunneling parameters ***
++aigc = 1.45236E-2 bigc = 0 cigc = 1E-3
++aigsd = 1.12149E-2 laigsd = 0 bigsd = 3.99425E-3
++cigsd = 0.12088 nigc = 4 pigcd = 0.5
++dlcig = 1E-9 toxqm = 3.1E-9*swr_tox_lv ntox = 1.024
++toxref = 1.8E-9 ebg = 1.15 alphagb1 = 0.35
++betagb1 = 1E-4 vgb1 = 200 vevb = 0.3
++alphagb2 = 0.6136 betagb2 = 0.06 vgb2 = 200
++vecb = 3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.36E-10/swr_tox_lv cgdo = 3.36E-10/swr_tox_lv
++cgeo = 1E-10/swr_tox_lv cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6
++vsdfb = -5 vsdth = -3 csdmin = 1E-4
++cgsl = 4.5E-11/swr_tox_lv cgdl = 4.5E-11/swr_tox_lv ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.7855E-8 llc = 0 lwc = 0
++lwlc = 0 dlbg = 0 dwc = 0
++wlc = 0 wwc = 0 wwlc = 0
++dwbc = 9.102E-8 delvt = 0 ldelvt = -8E-3
++wdelvt = 7.2E-3 fbody = 0 moin = 15
++cfrcoeff = 1 noff = 1 voffcv = -0.2
++minvcv = 0.06
+//*** Temperature coefficient ***
++tnom = 27 ute = -1.5 kt1 = -0.231
++kt1l = -2E-8 kt2 = 0.022 ua1 = 1E-9
++ub1 = -1E-18 uc1 = -5.6E-11 at = 1E4
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Unknown Parameters ***
++gatetype = h dskip = yes
+ends nmos_1p2v_highvt_hg
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_highvt_sbc (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_sbc_as ( nf , w )
++ ad = swf_fet_sbc_as ( nf , w )
++ pd = swf_fet_sbc_ps ( nf , w )
++ ps = swf_fet_sbc_ps ( nf , w )
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp_sbc (nf)
++ psbcp = swf_psbcp_sbc (nf)
++ agbcp = swf_agbcp_sbc (nf)
++ agbcp2 = swf_agbcp_sbc (nf)
++ aebcp = swf_aebcp_sbc (nf)
+
+
+nmos_1p2v_highvt_sbc (d g s b x) base_nmos_1p2v_highvt_bodytie
++ swx_align_poly = 0 nbc=0
++ l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nmos_1p2v_highvt_sbc
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_highvt (d g s b)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.255u
++ swx_insidew_ds = 0.28u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
++ aebcp = swx_active_area - (as+ad)
+
+
+nmos_1p2v_highvt (d g s b) ps_nsoi2_lls
++ l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps
++ aebcp=aebcp
+
+ends nmos_1p2v_highvt
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_highvt_tg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 1
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+nmos_1p2v_highvt_tg (d g s b x) base_nmos_1p2v_highvt_tg
++ l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc
++ w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_nmos_highvt + 0.1
+
+
+model base_nmos_1p2v_highvt_tg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 minr = 1E-60 type = n
+//*** Geometry Range Parameter ***
++lmax = 6E-7 wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.5838 bdos = 1.2
+//*** Vth Related Parameter ***
++vth0 = 0.468 k1 = 0.145671 k1w1 = 0
++k1w2 = 0 k2 = -0.203174 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 9.8E-8 dvt0 = 0.8815 dvt1 = 0.49265
++dvt2 = -0.032 dvt0w = 0.032 dvt1w = 0
++dvt2w = 0 dvtp0 = 1.3E-7 dvtp1 = 0
++dvtp2 = 0 dvtp3 = 0 dvtp4 = 0
++nlx = 1.74E-7
+//*** Mobility Related Parameter ***
++u0 = 129 * sw_u0_nmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 3.7E4 lvsat = -396
++wvsat = 2.304E3 a0 = 0.22824 ags = 0
++b0 = 0 b1 = 0 keta = 0
++ketas = 0 a1 = 0 a2 = 0.99
++rdsw = 60 * sw_rdsw_nmos_highvt prwb = 0 prwg = 0
++wr = 0.85
+//*** Subthreshold Related Parameter ***
++voff = -3.47449E-2 lvoff = -3.1536E-3 wvoff = 3.942E-3
++nfactor = 1.2 eta0 = 1.97064E-2 etab = 0
++dsub = 0.0305 cit = 0 cdsc = 6.57E-3
++cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = 1E-9 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 1.7 lpclm = 0 wpclm = 0.25
++pdiblc1 = 0.01 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 7.5E-3
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 3.5E-13 lagidl = -1E-14
++wagidl = 3E-14 bgidl = 1E8 cgidl = 0
++egidl = 0.36 ntun = 10 ndiode = 1.5
++ndioded = 1.5 nrecf0 = 1.6 nrecf0d = 1.6
++nrecr0 = 10 nrecr0d = 10 isbjt = 1E-5
++idbjt = 1E-5 isdif = 5.13E-8 iddif = 4.5E-8
++isrec = 1E-4 idrec = 1E-4 istun = 1E-5
++ln = 1E-11 vrec0 = 0.075 vtun0 = 0
++nbjt = 1.215 lbjt0 = 2E-7 vabjt = 9.7
++aely = 0 ahli = 1E-15 rbody = 10
++rbsh = 100 rhalo = 1E15 minv = 1.088
++lminv = -0.017 wminv = 0.118
+//*** Gate-to-body tunneling parameters ***
++aigc = 1.45236E-2 bigc = 0 cigc = 1E-3
++aigsd = 1.12149E-2 laigsd = 0 bigsd = 3.99425E-3
++cigsd = 0.12088 nigc = 4 pigcd = 0.5
++dlcig = 1E-9 toxqm = 3.1E-9*swr_tox_lv ntox = 1.024
++toxref = 1.8E-9 ebg = 1.15 alphagb1 = 0.35
++betagb1 = 1E-4 vgb1 = 200 vevb = 0.3
++alphagb2 = 0.6136 betagb2 = 0.06 vgb2 = 200
++vecb = 3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.36E-10/swr_tox_lv cgdo = 3.36E-10/swr_tox_lv
++cgeo = 1E-10/swr_tox_lv cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6
++vsdfb = -5 vsdth = -3 csdmin = 1E-4
++cgsl = 4.5E-11/swr_tox_lv cgdl = 4.5E-11/swr_tox_lv ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.7855E-8 llc = 0 lwc = 0
++lwlc = 0 dlbg = 0 dwc = 0
++wlc = 0 wwc = 0 wwlc = 0
++dwbc = 9.102E-8 delvt = 0 ldelvt = -8E-3
++wdelvt = 7.2E-3 fbody = 0 moin = 15
++cfrcoeff = 1 noff = 1 voffcv = -0.2
++minvcv = 0.06
+//*** Temperature coefficient ***
++tnom = 27 ute = -1.5 kt1 = -0.231
++kt1l = -2E-8 kt2 = 0.022 ua1 = 1E-9
++ub1 = -1E-18 uc1 = -5.6E-11 at = 1E4
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Unknown Parameters ***
++gatetype = h dskip = yes
+
+
+ends nmos_1p2v_highvt_tg
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_lowvt_hg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 2
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+nmos_1p2v_lowvt_hg (d g s b x) base_nmos_1p2v_lowvt_bodytie
++ swx_align_poly=0 nbc=nbc
++ l=l w=(w-2*sw_dvar_polycd) nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nmos_1p2v_lowvt_hg
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_lowvt_sbc (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_sbc_as ( nf , w )
++ ad = swf_fet_sbc_as ( nf , w )
++ pd = swf_fet_sbc_ps ( nf , w )
++ ps = swf_fet_sbc_ps ( nf , w )
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp_sbc (nf)
++ psbcp = swf_psbcp_sbc (nf)
++ agbcp = swf_agbcp_sbc (nf)
++ agbcp2 = swf_agbcp_sbc (nf)
++ aebcp = swf_aebcp_sbc (nf)
+
+
+nmos_1p2v_lowvt_sbc (d g s b x) base_nmos_1p2v_lowvt_bodytie
++ swx_align_poly=0 nbc=0
++ l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nmos_1p2v_lowvt_sbc
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_lowvt (d g s b)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.255u
++ swx_insidew_ds = 0.28u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
++ aebcp = swx_active_area - (as+ad)
+
+
+nmos_1p2v_lowvt (d g s b) ps_nsoi1_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps
++aebcp=aebcp
+
+ends nmos_1p2v_lowvt
+******************************************************************
+
+inline subckt nmos_1p2v_lowvt_tg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 1
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+ // Target adjustments
++ swx_vth0 = -0.095
++ swx_wvth0 = 1.3
++ swx_lvth0 = 1.4
++ swx_u0 = 1.05
++ swx_vsat = 1.05
++ swx_wint = -2e-8
++ swx_cg_tg = 0.816 // H-gate data extra H-bar overlap correction
+
+nmos_1p2v_lowvt_tg (d g s b x) base_nmos_1p2v_lowvt_tg
++ l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc
++ w=(w-sw_dvar_active-sw_dvar_polycd)*nf
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_nmos_lowvt
+
+model base_nmos_1p2v_lowvt_tg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 0 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 1 type = n
+//*** Geometry Range Parameter ***
++lmin = 5E-8 lmax = 4.1E-6 wmin = 2E-7
++wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 3E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1.5E18 nsub = 1E15
++ngate = 1E20 ados = 3.034 bdos = 0.6
+//*** Vth Related Parameter ***
++vth0 = 0.353 + swx_vth0
++lvth0 = 3.7E-3*swx_lvth0
++wvth0 = 3.13568E-2*(1+1e7*sw_align_poly)*swx_wvth0
++pvth0 = -2.3E-3 k1 = 0.2 k1w1 = 0
++k1w2 = 0 k2 = 0.2245 k3 = 76.9
++k3b = 434.4 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 1.581E-7 dvt0 = 2.2 ldvt0 = 0
++wdvt0 = 0.04 dvt1 = 0.6136 dvt2 = -0.032
++dvt0w = 0 dvt1w = 0 dvt2w = 0
++nlx = 1.74E-7
+//*** Mobility Related Parameter ***
++u0 = 187.282057 * sw_u0_nmos_lowvt * swx_u0
++lu0 = -4.275293 wu0 = 4.62
++pu0 = -0.2998 ua = 1E-10 ub = 2.5E-19
++eu = 1.67 vsat = 4.29536E5 *swx_vsat lvsat = -2.365248E4
++wvsat = 2.58825E3 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 77.4 * sw_rdsw_nmos_lowvt wrdsw = -7.92
++prwb = 0 prwg = 0
+//*** Subthreshold Related Parameter ***
++voff = -0.09 lvoff = -8.512E-3 wvoff = -8.337135E-3
++pvoff = 2.4342E-4 nfactor = 0.282395 lnfactor = 0.057
++eta0 = 0 leta0 = 1.875E-3 etab = 0
++dsub = 0.05 cit = 0 cdsc = 8.64E-3
++cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = 1E-8 ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 0 + swx_wint
++dwg = 0 dwb = 0
+//*** Output Resistance Related Parameter ***
++pclm = 1 lpclm = 0 wpclm = 0
++pdiblc1 = 0.021 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = -0.12 delta = 0.02
++cgidl = 2 egidl = 1 ntun = 10
++ndiode = 1 ndioded = 1 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8
++iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4
++istun = 1E-5 ln = 1E-11 vrec0 = 0.075
++vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7
++vabjt = 9.7 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = -0.3875*1.6 lminv = 0.025*0.9 wminv = -0.09
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.43 bigc = 0 cigc = 0.0273
++aigsd = 0.011528 bigsd = 7E-4 cigsd = 9.00909E-2
++nigc = 4 pigcd = 0.5 poxedge = 1
++dlcig = 8.6E-10 toxqm = 1.8E-9 ntox = 1.024
++toxref = 1.8E-9 ebg = 1.15 alphagb1 = 0.64
++betagb1 = 0 vgb1 = 200 vevb = 0.3
++alphagb2 = 1.0136 betagb2 = 0.06 vgb2 = 200
++vecb = 3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.2648E-10/swr_tox_lv*swx_cg_tg cgdo = 3.2648E-10/swr_tox_lv*swx_cg_tg
++cgeo = 2.3E-10/swr_tox_lv*swx_cg_tg
++cjswg = 1E-10/sw_rdsw_nmos_lowvt mjswg = 0.6
++vsdfb = -5 vsdth = -3 csdmin = 1E-4
++cgsl = 9.911719E-11/swr_tox_lv/sqrt(sw_rdsw_nmos_lowvt)*swx_cg_tg
++cgdl = 9.911719E-11/swr_tox_lv/sqrt(sw_rdsw_nmos_lowvt)*swx_cg_tg
++ckappa = 0.6 cf = 0 clc = 5E-7
++cle = 0.6 dlc = 3.92E-8 llc = 0
++dlbg = 0 dwc = 0 dwbc = 8E-8
++delvt = 3.39434E-2 ldelvt = -7.094297E-3 wdelvt = 0.01476
++fbody = 0 noff = 0.63 voffcv = -0.189504
++minvcv = 0.507402 lminvcv = 0.3
+//*** Temperature coefficient ***
++tnom = 27 ute = -1.26 kt1 = -0.1358
++kt1l = 3E-9 kt2 = 0.022 ua1 = 0
++ub1 = 0 uc1 = -5.6E-11 at = 0
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+ends nmos_1p2v_lowvt_tg
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p8v_sbc (d g s e p)
+
+parameters l=0.2u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical, instance parameters:
+parameters
++ as = swx_total_sarea * 0.5
++ ad = swx_total_darea * 0.5
++ pd = swx_total_dperim * 0.5
++ ps = swx_total_sperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.15e-6 * nf
++ psbcp = 0
++ agbcp = 0.15e-6 * 0.075e-6 * nf
++ agbcp2 = 0.15e-6 * 0.075e-6 * nf
++ aebcp = 4*0.15e-6*0.225e-6
+// + aebcp = swx_active_area - (as+ad)
+
+
+nmos_1p8v_sbc (d g s e p) nmos_1p8v_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+ends nthick_sbc
+
+// -----------------------------------------------------------
+
+inline subckt nmos_1p8v_tg (d g s e p)
+
+parameters l=0.2u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.5*(swx_total_sdperim-2*w)
++ psbcp = 0.5*(swx_total_sdperim-2*w)
++ agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
+// + aebcp = swx_active_area - (as+ad)
+
+nmos_1p8v_tg (d g s e p) nmos_1p8v_base l=l
++ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly
++ nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nthick_tg
+
+// -----------------------------------------------------------
+
+inline subckt nmos_1p8v_hg (d g s e p)
+
+parameters l=0.2u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = swx_total_sdperim-2*w
++ psbcp = swx_total_sdperim-2*w
++ agbcp = (swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
+// + aebcp = swx_active_area - (as+ad)
+
+
+nmos_1p8v_hg (d g s e p) nmos_1p8v_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nthick_hg
+
+
+// ===========================================================================
+
+inline subckt nmos_1p8v_base (d g s e p)
+
+parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp
+
+nmos_1p8v_base (d g s e p) nmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model nmosthick bsimsoi
+//*** Flag Parameter ***
++version = 4.5 soimod = 0 shmod = 1
++binunit = 1 paramchk = 0 mobmod = 4
++capmod = 3 rdsmod = 1 igcmod = 1
++igbmod = 1 rgatemod = 1 rbodymod = 0
++fnoimod = 1 tnoimod = 0 mtrlmod = 0
++vgstcvmod = 1 gidlmod = 0 iiimod = 0
++fdmod = 0 minr = 1E-60 type = n
+//*** Geometry Range Parameter ***
++lmin = 0.15u lmax = 0.4u wmin = 0
++wmax = 1
+//*** Process Parameter ***
++tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv
++dtoxcv = 0 xj = 3E-8
++nch = 5E17 nsub = 5E14 ngate = 1.4E20
++nsd = 5E20 eot = 6.2E-9 epsrox = 3.9
++vddeot = 1.5 leffeot = 1 weffeot = 10
++tempeot = 300.03 phig = 4.05 easub = 2.268
++epsrsub = 5.85 epsrgate = 6.669 ni0sub = 6.000014E15
++bg0sub = 0.833106 ados = 2.258187 bdos = 0.895351
++etsi = 3.06E-8
+//*** Vth Related Parameter ***
++vth0 = 0.669911 + sw_vth0_nthick k1 = 0.85065 k1w1 = 0
++k1w2 = 0 k2 = -0.0186 k3 = 0
++k3b = 0 kb1 = 1 w0 = 2.5E-6
++lpe0 = 1.319843E-8 lpeb = 0 dvt0 = 0
++dvt1 = 0.795 dvt2 = -0.032 dvt0w = 0
++dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1
++dvtp0 = 0 dvtp1 = 0 dvtp2 = 0
++dvtp3 = 0 dvtp4 = 0 vsce = 0
++cdsbs = 0
+//*** Mobility Related Parameter ***
++u0 = 1.50207E-2 * sw_u0_nthick ua = 2.25E-9 ub = 5.87E-19
++uc = -4.65E-11 ud = 0 eu = 1.67
++ucs = 1.67 vsat = 4.975669E4 lvsat = 3.936906E3
++a0 = 0.106174 la0 = 5.92427E-2 ags = -0.674281
++lags = 0.163408 b0 = 0 b1 = 0
++keta = -0.6 lketa = 0 ketas = 0
++a1 = 0 a2 = 1 rdsw = 168 * sw_rdsw_nthick
++rdw = 50 rdwmin = 0 rsw = 50
++rswmin = 0 prwb = 0 prwg = 0
++wr = 1
+//*** Subthreshold Related Parameter ***
++voff = 0 lvoff = -3.15587E-2 nfactor = 0.784
++eta0 = 0.09 leta0 = 0 etab = -0.07
++eta0cv = 0.08 etabcv = -0.07 dsub = 0.56
++cit = 3.62E-4 cdsc = 2.4E-4 cdscb = 0
++cdscd = 0
+//*** dW and dL Parameter ***
++lint = 0 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 0 wln = 1 ww = 0
++wwn = 1 wwl = 0 xw = 0
++xl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 2.924809 pdiblc1 = 1.95E-10 pdiblc2 = 4.3E-3
++pdiblcb = 0 drout = 0.6104 pvag = -0.590676
++delta = 8.3E-3 alpha0 = 0 fbjtii = 0
++beta0 = 0 beta1 = 0 beta2 = 0.1
++vdsatii0 = 0.9 tii = 0 lii = 0
++esatii = 1E7 sii0 = 0.5 sii1 = 0.1
++sii2 = 0 siid = 0 agidl = 0
++bgidl = 2.3E9 cgidl = 0.5 egidl = 1.2
++rgidl = 1 kgidl = 0 fgidl = 0
++agisl = 0 bgisl = 2.3E9 cgisl = 0
++egisl = 1.2 rgisl = 1 kgisl = 0
++fgisl = 0 ntun = 10 ntund = 10
++ndiode = 1 ndioded = 1 nrecf0 = 2
++nrecf0d = 2 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-6 idbjt = 1E-6 isdif = 0
++iddif = 0 isrec = 1E-5 idrec = 1E-5
++istun = 0 idtun = 0 ln = 2E-6
++vrec0 = 0 vrec0d = 0 vtun0 = 0
++vtun0d = 0 nbjt = 1 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 0
++ahlid = 0 rbody = 0 rbsh = 0
++rsh = 0 rhalo = 1E15 pdits = 1E-20
++pditsl = 0 pditsd = 0 fprout = 0
++minv = 1.23 frbody = 1 ebjtii = 0
++cbjtii = 0 vbci = 0 abjtii = 0
++mbjtii = 0.4
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.43 bigc = 0.054 cigc = 0.075
++aigsd = 0.43 bigsd = 0.054 cigsd = 0.075
++nigc = 1 pigcd = 1 poxedge = 1
++dlcig = 0 toxqm = 1E-8 ntox = 1
++toxref = 6.2E-9 ebg = 1.2 alphagb1 = 0.35
++betagb1 = 0.03 vgb1 = 300 vevb = 0.075
++alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17
++vecb = 0.026 voxh = 5 deltavox = 5E-3
++aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 5.767067E-11/swr_tox_hv cgdo = 5.767067E-11/swr_tox_hv
++cgeo = 2.834954E-11/swr_tox_hv cjswg = 1E-10/sqrt(sw_rdsw_nthick) mjswg = 0.6
++cgsl = 2.016123E-10/sqrt(sw_rdsw_nthick) cgdl = 2.016123E-10/sqrt(sw_rdsw_nthick) ckappa = 7.880675
++cf = 0 clc = 3.05E-7 cle = 0.6
++dlc = 2.124684E-8 llc = 0 dlbg = 1E-8
++dwc = 0 delvt = 0 fbody = 0.948281
++moin = 25 voffcv = 0
+//*** Temperature coefficient ***
++tnom = 27 ute = -2.278199 lute = -0.076915
++ucste = -4.775E-3 ud1 = 0 kt1 = -0.455906
++kt1l = -8.0494E-10 kt2 = 0.022 ua1 = 2.316625E-9
++ub1 = -7.61E-18 uc1 = -5.6E-11 at = 2.4E4
++lat = 0 tcjswg = 0 tpbswg = 0
++tcjswgd = 0 tpbswgd = 0 cth0 = 1E-5
++prt = 0.474662 rth0 = 0 ntrecf = 0
++ntrecr = 0 xbjt = 1 xdif = 1
++xrec = 1 xtun = 0 xdifd = 1
++xrecd = 1 xtund = 0 wth0 = 0
++tvbci = 0 tbgasub = 7.02E-4 tbgbsub = 1.108E3
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 1 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.25
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
++rbsb = 50 rbdb = 50 gbmin = 1E-12
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Stress Effect Related Parameter ***
++saref = 1E-6 sbref = 1E-6 wlod = 0
++ku0 = 0 kvsat = 0 kvth0 = 0
++tku0 = 0 llodku0 = 0 wlodku0 = 0
++llodvth = 0 wlodvth = 0 stk2 = 0
++lodk2 = 1 steta0 = 0 lodeta0 = 1
++steta0cv = 0 lodeta0cv = 1
+//***Material Properties***
++eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7
++bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10
++agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12
++bgbc2p = 7.4567E11 vtm00 = 0.026
+
+
+ends nmosthick
+******************************************************************
+******************************************************************
+
+inline subckt nmos_3p3v_sbc (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical, instance parameters:
+parameters
++ as = swx_total_sarea * 0.5
++ ad = swx_total_darea * 0.5
++ pd = swx_total_dperim * 0.5
++ ps = swx_total_sperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.15e-6 * nf
++ psbcp = 0
++ agbcp = 0.15e-6 * 0.075e-6 * nf
++ agbcp2 = 0.15e-6 * 0.075e-6 * nf
++ aebcp = 4*0.15e-6*0.225e-6
+// + aebcp = swx_active_area - (as+ad)
+
+
+nmos_3p3v_sbc (d g s e p) nthick_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+ends nthick_sbc
+
+// -----------------------------------------------------------
+
+inline subckt nmos_3p3v_tg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.5*(swx_total_sdperim-2*w)
++ psbcp = 0.5*(swx_total_sdperim-2*w)
++ agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
+// + aebcp = swx_active_area - (as+ad)
+
+nmos_3p3v_tg (d g s e p) nthick_base l=l
++ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly
++ nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nthick_tg
+
+// -----------------------------------------------------------
+
+inline subckt nmos_3p3v_hg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = swx_total_sdperim-2*w
++ psbcp = swx_total_sdperim-2*w
++ agbcp = (swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
+// + aebcp = swx_active_area - (as+ad)
+
+
+nmos_3p3v_hg (d g s e p) nthick_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nthick_hg
+
+
+// ===========================================================================
+
+inline subckt nthick_base (d g s e p)
+
+parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp
+
+nthick_base (d g s e p) nmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model nmosthick bsimsoi
+//*** Flag Parameter ***
++version = 4.5 soimod = 0 shmod = 1
++binunit = 1 paramchk = 0 mobmod = 4
++capmod = 3 rdsmod = 0 igcmod = 1
++igbmod = 1 rgatemod = 1 rbodymod = 0
++fnoimod = 1 tnoimod = 0 mtrlmod = 0
++vgstcvmod = 1 gidlmod = 0 iiimod = 0
++fdmod = 0 minr = 1E-60 type = n
+//*** Geometry Range Parameter ***
++lmin = 0 lmax = 5.1 wmin = 0
++wmax = 1
+//*** Process Parameter ***
++tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv
++ dtoxcv = 0 xj = 3E-8
++nch = 5E17 nsub = 5E14 ngate = 1.4E20
++nsd = 5E20 eot = 6.2E-9 epsrox = 3.9
++vddeot = 1.5 leffeot = 1 weffeot = 10
++tempeot = 300.03 phig = 4.05 easub = 2.268
++epsrsub = 5.85 epsrgate = 6.669 ni0sub = 6.000014E15
++bg0sub = 0.833106 ados = 2.258187 bdos = 0.895351
++etsi = 3.06E-8
+//*** Vth Related Parameter ***
++vth0 = 0.707 + sw_vth0_nthick k1 = 0.795 k1w1 = 0
++k1w2 = 0 k2 = -0.0186 k3 = 0
++k3b = 0 kb1 = 1 w0 = 2.5E-6
++lpe0 = 9.7E-9 lpeb = 0 dvt0 = 2.266
++dvt1 = 0.795 dvt2 = -0.032 dvt0w = 0
++dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1
++dvtp0 = 0 dvtp1 = 0 dvtp2 = 0
++dvtp3 = 0 dvtp4 = 0 vsce = 0
++cdsbs = 0
+//*** Mobility Related Parameter ***
++u0 = 1.59795E-2*sw_u0_nthick ua = 2.25E-9 ub = 5.87E-19
++uc = -4.65E-11 ud = 0 eu = 1.67
++ucs = 1.67 vsat = 1.099198E5 lvsat = -1.017526E4
++a0 = 0.106174 la0 = 5.92427E-2 ags = -0.674281
++lags = 0.163408 b0 = 0 b1 = 0
++keta = -0.6 lketa = 0 ketas = 0
++a1 = 0 a2 = 1 rdsw = 112 * sw_rdsw_nthick
++rdw = 50 rdwmin = 0 rsw = 50
++rswmin = 0 prwb = 0 prwg = 0
++wr = 1
+//*** Subthreshold Related Parameter ***
++voff = 0 lvoff = -3.15587E-2 nfactor = 1.12
++eta0 = 1E-3 etab = -0.07 eta0cv = 0.08
++etabcv = -0.07 dsub = 0.56 cit = 3.62E-4
++cdsc = 2.4E-4 cdscb = 0 cdscd = 0
+//*** dW and dL Parameter ***
++lint = 0 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 0 wln = 1 ww = 0
++wwn = 1 wwl = 0 xw = 0
++xl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 2.924809 pdiblc1 = 1.95E-10 pdiblc2 = 4.3E-3
++pdiblcb = 0 drout = 0.6104 pvag = -0.590676
++delta = 8.3E-3 alpha0 = 0 fbjtii = 0
++beta0 = 0 beta1 = 0 beta2 = 0.1
++vdsatii0 = 0.9 tii = 0 lii = 0
++esatii = 1E7 sii0 = 0.5 sii1 = 0.1
++sii2 = 0 siid = 0 agidl = 0
++bgidl = 2.3E9 cgidl = 0.5 egidl = 1.2
++rgidl = 1 kgidl = 0 fgidl = 0
++agisl = 0 bgisl = 2.3E9 cgisl = 0
++egisl = 1.2 rgisl = 1 kgisl = 0
++fgisl = 0 ntun = 10 ntund = 10
++ndiode = 1 ndioded = 1 nrecf0 = 2
++nrecf0d = 2 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-6 idbjt = 1E-6 isdif = 0
++iddif = 0 isrec = 1E-5 idrec = 1E-5
++istun = 0 idtun = 0 ln = 2E-6
++vrec0 = 0 vrec0d = 0 vtun0 = 0
++vtun0d = 0 nbjt = 1 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 0
++ahlid = 0 rbody = 1000 rbsh = 0
++rsh = 0 rhalo = 1E15 pdits = 1E-20
++pditsl = 0 pditsd = 0 fprout = 0
++minv = 0 frbody = 1 ebjtii = 0
++cbjtii = 0 vbci = 0 abjtii = 0
++mbjtii = 0.4
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.43 bigc = 0.054 cigc = 0.075
++aigsd = 0.43 bigsd = 0.054 cigsd = 0.075
++nigc = 1 pigcd = 1 poxedge = 1
++dlcig = 0 toxqm = 1E-8 ntox = 1
++toxref = 6.2E-9 ebg = 1.2 alphagb1 = 0.35
++betagb1 = 0.03 vgb1 = 300 vevb = 0.075
++alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17
++vecb = 0.026 voxh = 5 deltavox = 5E-3
++aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 5.767067E-11/swr_tox_hv cgdo = 5.767067E-11/swr_tox_hv
++cgeo = 2.834954E-11/swr_tox_hv cjswg = 1E-10/sqrt(sw_rdsw_nthick) mjswg = 0.6
++cgsl = 2.016123E-10/sqrt(sw_rdsw_nthick) cgdl = 2.016123E-10/sqrt(sw_rdsw_nthick) ckappa = 7.880675
++cf = 0 clc = 3.05E-7 cle = 0.6
++dlc = 2.124684E-8 llc = 0 dlbg = 1E-8
++dwc = 0 delvt = 0 fbody = 0.948281
++moin = 25 voffcv = 0
+//*** Temperature coefficient ***
++tnom = 27 ute = -2.15594 lute = 0
++ucste = -4.775E-3 ud1 = 0 kt1 = -5.72707E-2
++kt1l = -8.554249E-8 kt2 = 0.022 ua1 = 2.155E-9
++ub1 = -7.61E-18 uc1 = -5.6E-11 at = 32.04948
++tcjswg = 0 tpbswg = 0 tcjswgd = 0
++tpbswgd = 0 cth0 = 1E-5 prt = 0.474662
++rth0 = 0 ntrecf = 0 ntrecr = 0
++xbjt = 1 xdif = 1 xrec = 1
++xtun = 0 xdifd = 1 xrecd = 1
++xtund = 0 wth0 = 0 tvbci = 0
++tbgasub = 7.02E-4 tbgbsub = 1.108E3
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 1 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.25
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
++rbsb = 50 rbdb = 50 gbmin = 1E-12
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Stress Effect Related Parameter ***
++saref = 1E-6 sbref = 1E-6 wlod = 0
++ku0 = 0 kvsat = 0 kvth0 = 0
++tku0 = 0 llodku0 = 0 wlodku0 = 0
++llodvth = 0 wlodvth = 0 stk2 = 0
++lodk2 = 1 steta0 = 0 lodeta0 = 1
++steta0cv = 0 lodeta0cv = 1
+//***Material Properties***
++eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7
++bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10
++agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12
++bgbc2p = 7.4567E11 vtm00 = 0.026
+
+
+ends nmosthick
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_highvt_hg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 2
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+pmos_1p2v_highvt_hg (d g s b x) base_pmos_1p2v_highvt_hg
++ nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc
++ l=l w=(w-2*sw_dvar_polycd) * nf
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_pmos_highvt - 0.05
+
+model base_pmos_1p2v_highvt_hg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 type = p
+//*** Geometry Range Parameter ***
++lmax = 5.1E-6 wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+//*** Vth Related Parameter ***
++vth0 = -0.62 k1 = 0.5644 k1w1 = -2E-8
++k1w2 = 0 k2 = 0 k3 = -1.84
++k3b = 0 kb1 = 0 w0 = 1E-9
++lpe0 = -1.29E-8 lpeb = -2E-8 dvt0 = 0.64
++dvt1 = 0.21186 dvt2 = 0.391 dvt0w = -0.24
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 1E-8
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+//*** Mobility Related Parameter ***
++u0 = 25 * (sw_u0_pmos_highvt**0.8) ua = 0 ub = 0
++uc = -7.4E-10 vsat = 1E6 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 1 rdsw = 60 *sw_rdsw_pmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+//*** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 3.2155 eta0 = 0.074
++etab = -0.07 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = -8E-9 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 3E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 0.675 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 1E-12 bgidl = 9E8
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 6.155E-4 idbjt = 7E-5 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 0
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 8.8E-3 bigsd = 7E-4 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++toxqm = sw_tox_lv ntox = 4.5 toxref = 1.8e-9
++ebg = 1.2 alphagb1 = 0.74 betagb1 = 0.03
++vgb1 = 300 vevb = 0.075 alphagb2 = 0.43
++betagb2 = 0.05 vgb2 = 17 vecb = 0.026
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 5.0e-10/swr_tox_lv cjswg = 8.6E-11/sw_rdsw_pmos_lowvt mjswg = 0.5
++vsdfb = -4 vsdth = -2 csdmin = 1E-4
++cgsl = 3E-10/swr_tox_lv cgdl = 3E-10/swr_tox_lv ckappa = 0.95
++cf = 0 clc = 1E-8 cle = 0
++dlc = -3.98159E-8
+// +llc = 1.209E-16 lwc = 0
+//+lwlc = 0 dlbg = 0
++ dwc = -7.8E-8
++delvt = -0.028 fbody = 0 acde = 1
++moin = 500 noff = 1.23 voffcv = -0.5
++minvcv = 0.3 lminvcv = -0.054 wminvcv = 0.3
+//*** Temperature coefficient ***
++tnom = 27 ute = -0.6396 ucste = -9.2E-3
++ud1 = 0 kt1 = -0.2755 kt1l = 2.2E-9
++kt2 = -0.3 ua1 = 0 ub1 = 0
++uc1 = 0 at = 3.4E4 tcjswg = 0
++cth0 = 0 prt = 0 rth0 = 0.2
++ntrecf = 0 ntrecr = 0 xbjt = 1.15
++xdif = 1.11 xrec = 0.9 xtun = 0
++xrecd = 1 wth0 = 4E-6
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+//*** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+//*** Unknown Parameters ***
++gatetype = non_h dskip = yes
+
+
+ends pmos_1p2v_highvt_hg
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_highvt_sbc (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_sbc_as ( nf , w )
++ ad = swf_fet_sbc_as ( nf , w )
++ pd = swf_fet_sbc_ps ( nf , w )
++ ps = swf_fet_sbc_ps ( nf , w )
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp_sbc (nf)
++ psbcp = swf_psbcp_sbc (nf)
++ agbcp = swf_agbcp_sbc (nf)
++ agbcp2 = swf_agbcp_sbc (nf)
++ aebcp = swf_aebcp_sbc (nf)
+
+
+pmos_1p2v_highvt_sbc (d g s b x) base_pmos_1p2v_highvt_bodytie
++ swx_align_poly = 0 nbc=0
++ l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p2v_highvt_sbc
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_highvt (d g s b)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.255u
++ swx_insidew_ds = 0.28u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+
+
+pmos_1p2v_highvt (d g s b) ps_psoi2_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps
+
+ends pmos_1p2v_highvt
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_highvt_tg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 1
++ swx_align_poly = sw_align_poly
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+pmos_1p2v_highvt_tg (d g s b x) base_pmos_1p2v_highvt_tg l=l nf=nf ad=ad as=as pd=pd ps=ps
++ w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf nbc=nbc
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_pmos_highvt - 0.05
+
+model base_pmos_1p2v_highvt_tg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 type = p
+//*** Geometry Range Parameter ***
++lmax = 5.1E-6 wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+//*** Vth Related Parameter ***
++vth0 = -0.62 k1 = 0.5644 k1w1 = -2E-8
++k1w2 = 0 k2 = 0 k3 = -1.84
++k3b = 0 kb1 = 0 w0 = 1E-9
++lpe0 = -1.29E-8 lpeb = -2E-8 dvt0 = 0.64
++dvt1 = 0.21186 dvt2 = 0.391 dvt0w = -0.24
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 1E-8
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+//*** Mobility Related Parameter ***
++u0 = 25 * (sw_u0_pmos_highvt**0.8) ua = 0 ub = 0
++uc = -7.4E-10 vsat = 1E6 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 1 rdsw = 60 *sw_rdsw_pmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+//*** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 3.2155 eta0 = 0.074
++etab = -0.07 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = -8E-9 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 3E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 0.675 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 1E-12 bgidl = 9E8
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 6.155E-4 idbjt = 7E-5 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 0
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 8.8E-3 bigsd = 7E-4 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++toxqm = sw_tox_lv ntox = 4.5 toxref = 1.8e-9
++ebg = 1.2 alphagb1 = 0.74 betagb1 = 0.03
++vgb1 = 300 vevb = 0.075 alphagb2 = 0.43
++betagb2 = 0.05 vgb2 = 17 vecb = 0.026
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 5.0e-10/swr_tox_lv cjswg = 8.6E-11/sw_rdsw_pmos_lowvt mjswg = 0.5
++vsdfb = -4 vsdth = -2 csdmin = 1E-4
++cgsl = 3E-10/swr_tox_lv cgdl = 3E-10/swr_tox_lv ckappa = 0.95
++cf = 0 clc = 1E-8 cle = 0
++dlc = -3.98159E-8
+// +llc = 1.209E-16 lwc = 0
+//+lwlc = 0 dlbg = 0
++ dwc = -7.8E-8
++delvt = -0.028 fbody = 0 acde = 1
++moin = 500 noff = 1.23 voffcv = -0.5
++minvcv = 0.3 lminvcv = -0.054 wminvcv = 0.3
+//*** Temperature coefficient ***
++tnom = 27 ute = -0.6396 ucste = -9.2E-3
++ud1 = 0 kt1 = -0.2755 kt1l = 2.2E-9
++kt2 = -0.3 ua1 = 0 ub1 = 0
++uc1 = 0 at = 3.4E4 tcjswg = 0
++cth0 = 0 prt = 0 rth0 = 0.2
++ntrecf = 0 ntrecr = 0 xbjt = 1.15
++xdif = 1.11 xrec = 0.9 xtun = 0
++xrecd = 1 wth0 = 4E-6
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+//*** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+//*** Unknown Parameters ***
++gatetype = non_h dskip = yes
+
+
+ends pmos_1p2v_highvt_hg
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_lowvt_hg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 2
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+pmos_1p2v_lowvt_hg (d g s b x) base_pmos_1p2v_lowvt_bodytie
++ swx_align_poly=0 nbc=nbc
++ l=l w=(w-2*sw_dvar_polycd) nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p2v_lowvt_hg
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_lowvt_sbc (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_sbc_as ( nf , w )
++ ad = swf_fet_sbc_as ( nf , w )
++ pd = swf_fet_sbc_ps ( nf , w )
++ ps = swf_fet_sbc_ps ( nf , w )
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp_sbc (nf)
++ psbcp = swf_psbcp_sbc (nf)
++ agbcp = swf_agbcp_sbc (nf)
++ agbcp2 = swf_agbcp_sbc (nf)
++ aebcp = swf_aebcp_sbc (nf)
+
+
+pmos_1p2v_lowvt_sbc (d g s b x) base_pmos_1p2v_lowvt_bodytie
++ swx_align_poly=0 nbc=0
++ l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p2v_lowvt_sbc
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_lowvt (d g s b)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.255u
++ swx_insidew_ds = 0.28u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
++ aebcp = swx_active_area - (as+ad)
+
+
+pmos_1p2v_lowvt (d g s b) ps_psoi1_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps
++aebcp=aebcp
+
+ends pmos_1p2v_lowvt
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_lowvt_tg (d g s e p)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 1
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+ // Refitting adjustment then target adjustments
++ swx_vth0 = -0.103
++ swx_lvth0 = 1.05
++ swx_wvth0 = -0.55
++ swx_u0 = 0.85
++ swx_lu0 = -3
++ swx_vsat = 0.8
++ swx_lvsat = 500
++ swx_wvsat = 2000
++ swx_cg_tg = 0.9
+
+
+pmos_1p2v_lowvt_tg (d g s e p) base_pmos_1p2v_lowvt_tg
++ l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc
++ w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_pmos_lowvt
+
+model base_pmos_1p2v_lowvt_tg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 type = p
+//*** Geometry Range Parameter ***
++lmax = 4E-7 wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+//*** Vth Related Parameter ***
++vth0 = -0.245+swx_vth0 lvth0 = -0.014*swx_lvth0 wvth0 = 0.015*swx_wvth0
++k1 = 0.01 k1w1 = 0 k1w2 = 0
++k2 = -0.12 k3 = -5.42 k3b = 0
++kb1 = 0 w0 = 0 lpe0 = -1E-8
++lpeb = 0 dvt0 = 1.145 dvt1 = 0.21684
++dvt2 = 0 dvt0w = 0.056 dvt1w = 1.5E5
++dvt2w = 0 dvtp0 = 0 dvtp1 = 0
++dvtp2 = 0 dvtp3 = 0 dvtp4 = 0
++cdsbs = 1E-3
+//*** Mobility Related Parameter ***
++u0 = 89.7*sw_u0_pmos_lowvt*swx_u0
++lu0 = -1.4*swx_lu0
++wu0 = -4
++pu0 = 0 ua = 0 ub = 0
++uc = 0
++vsat = 7.2E4*swx_vsat
++lvsat = swx_lvsat
++wvsat = swx_wvsat
++a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 300*sw_rdsw_pmos_lowvt prwb = 0
++prwg = 0 wr = 0.85
+//*** Subthreshold Related Parameter ***
++voff = -0.042048 nfactor = 0.2304 eta0 = 0.0276
++etab = -1E-3 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = -2.743E-8 ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -5.08E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 1.35 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 2E-12 bgidl = 1E9
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 1.5
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 1.8E-3 bigsd = 0 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++toxqm = 10e-9*swr_tox_lv ntox = 4.5 toxref = 1.8E-9
++ebg = 1.2 alphagb1 = 0.74 betagb1 = 0.03
++vgb1 = 300 vevb = 0.075 alphagb2 = 0.43
++betagb2 = 0.05 vgb2 = 17 vecb = 0.026
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 2.67976E-10/swr_tox_lv*swx_cg_tg cgdo = 2.67976E-10/swr_tox_lv*swx_cg_tg
++cgeo = 2.3e-10/swr_tox_lv*swx_cg_tg cjswg = 1.112401E-10/sw_rdsw_pmos_lowvt mjswg = 0.3
++vsdfb = -4 vsdth = -2 csdmin = 1E-4
++cgsl = 2.74302E-10/swr_tox_lv/sqrt(sw_rdsw_pmos_lowvt)*swx_cg_tg
++cgdl = 2.74302E-10/swr_tox_lv/sqrt(sw_rdsw_pmos_lowvt)*swx_cg_tg ckappa = 0.1
++cf = 0 clc = 1E-8 cle = 0
++dlc = -2.654244E-8 llc = 0 lwc = 0
++lwlc = 0 dlbg = 0 dwc = 2.814178E-8
++wlc = 0 wwc = 0 wwlc = 0
++delvt = -6.54447E-2 ldelvt = 0.03 fbody = 0
++acde = 1 moin = 500 cfrcoeff = 1
++noff = 1 voffcv = -0.5 minvcv = 0.51
++wminvcv = 4.96175
+//*** Temperature coefficient ***
++tnom = 22 ute = -1.095 kt1 = -2.41893E-2
++kt1l = -1.345103E-8 kt2 = -0.15 ua1 = 0
++ub1 = 0 uc1 = 0 at = 3.4E4
++tcjswg = 0 cth0 = 1E-6 prt = 0
++rth0 = 0.2 ntrecf = 0 ntrecr = 0
++xbjt = 1.15 xdif = 1.11 xrec = 0.9
++xtun = 0 wth0 = 4E-6
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+//*** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+ends pmos_1p2v_lowvt_tg
+******************************************************************
+******************************************************************
+// -----------------------------------------------------------
+
+inline subckt pmos_1p8v_sbc (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical, instance parameters:
+parameters
++ as = swx_total_sarea * 0.5
++ ad = swx_total_darea * 0.5
++ pd = swx_total_dperim * 0.5
++ ps = swx_total_sperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.15e-6 * nf
++ psbcp = 0
++ agbcp = 0.15e-6 * 0.075e-6 * nf
++ agbcp2 = 0.15e-6 * 0.075e-6 * nf
++ aebcp = 4*0.15e-6*0.225e-6
+// + aebcp = swx_active_area - (as+ad)
+
+
+pmos_1p8v_sbc (d g s e p) pmos_1p8v_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p8v_sbc
+
+// -----------------------------------------------------------
+
+inline subckt pmos_1p8v_tg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.5*(swx_total_sdperim-2*w)
++ psbcp = 0.5*(swx_total_sdperim-2*w)
++ agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
+//+ aebcp = swx_active_area - (as+ad)
+
+
+pmos_1p8v_tg (d g s e p) pmos_1p8v_base l=l
++ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly
++ nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p8v_tg
+
+// -----------------------------------------------------------
+
+inline subckt pmos_1p8v_hg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
++ pdbcp = swx_total_sdperim-2*w
++ psbcp = swx_total_sdperim-2*w
++ agbcp = (swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
+//+ aebcp = swx_active_area - (as+ad)
+
+
+pmos_1p8v_hg (d g s e p) pmos_1p8v_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p8v_hg
+
+
+// ===========================================================================
+
+inline subckt pmos_1p8v_base (d g s e p)
+
+parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp
+
+pmos_1p8v_base (d g s e p) pmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+model pmosthick bsimsoi
+//*** Flag Parameter ***
++version = 4.5 soimod = 0 shmod = 1
++binunit = 1 paramchk = 0 mobmod = 1
++capmod = 3 rdsmod = 1 igcmod = 1
++igbmod = 1 rgatemod = 1 rbodymod = 1
++fnoimod = 1 tnoimod = 0 mtrlmod = 0
++vgstcvmod = 1 gidlmod = 0 iiimod = 0
++fdmod = 0 minr = 1E-60 type = p
+//*** Geometry Range Parameter ***
++lmin = 0.15u lmax = 0.4u wmin = 0.4u
++wmax = 1
+//*** Process Parameter ***
++tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv
++dtoxcv = -3.111883E-9 xj = 3E-8 nch = 8E17
++nsub = 5E14 ngate = 3.8E19 nsd = 2E20
++ados = 1.332 bdos = 0.86892
+//*** Vth Related Parameter ***
++vth0 = -0.466054 + sw_vth0_pthick k1 = 0.388186 k1w1 = 0
++k1w2 = 0 k2 = -5.88086E-2 k3 = 0
++k3b = 0 kb1 = 1 w0 = 2.5E-6
++lpe0 = 2.08067E-7 lpeb = 0 dvt0 = 2.2
++dvt1 = 0.53 dvt2 = -0.032 dvt0w = 0
++dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1
++dvtp0 = 0 dvtp1 = 0 dvtp2 = 0
++dvtp3 = 0 dvtp4 = 0 vsce = 0
++cdsbs = 0
+//*** Mobility Related Parameter ***
++u0 = 4.7311E-3 * sw_u0_pthick ua = 0 ub = 1.276725E-19
++uc = -2.325E-11 ud = 0 eu = 1
++ucs = 1 vsat = 1.48766E4 lvsat = 1.673617E3
++a0 = 0.105474 la0 = 7.09237E-2 ags = 3.0958
++lags = 0.999946 b0 = 0 b1 = 5.634546E-8
++keta = -0.6 ketas = 0 a1 = 0
++a2 = 1 rdsw = 420.5 * sw_rdsw_pthick rdw = 50
++rdwmin = 0 rsw = 50 rswmin = 0
++prwb = 0 prwg = -3E-5 wr = 1
+//*** Subthreshold Related Parameter ***
++voff = 0 nfactor = 0.375 eta0 = 0.169852
++leta0 = 2.21911E-2 etab = -0.07 eta0cv = 0.08
++etabcv = -0.07 dsub = 0.825467 ldsub = 0
++cit = 9.782955E-4 cdsc = 2.4E-4 cdscb = 0
++cdscd = 0
+//*** dW and dL Parameter ***
++lint = 0 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 0 wln = 1 ww = 0
++wwn = 1 wwl = 0 xw = 0
++xl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 2.501523 pdiblc1 = 3.84369E-2 pdiblc2 = 1.000168E-5
++pdiblcb = 0 drout = 4.316444 ldrout = 0
++pvag = 4.83206E-2 delta = 0.025 alpha0 = 0
++fbjtii = 0 beta0 = 0 beta1 = 0
++beta2 = 0.1 vdsatii0 = 0.9 tii = 0
++lii = 0 esatii = 1E7 sii0 = 0.5
++sii1 = 0.1 sii2 = 0 siid = 0
++agidl = 0 bgidl = 2.3E9 cgidl = 0.5
++egidl = 1.2 rgidl = 1 kgidl = 0
++fgidl = 0 agisl = 0 bgisl = 2.3E9
++cgisl = 0 egisl = 1.2 rgisl = 1
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 1E3 rbsh = 100 rhalo = 1E15
++minv = 1.02
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.31 bigc = 0.024 cigc = 0.03
++aigsd = 0.31 bigsd = 0.024 cigsd = 0.03
++nigc = 1 pigcd = 1 poxedge = 1
++dlcig = 0 toxqm = 1E-8 ntox = 1
++toxref = 2.5E-9 ebg = 1.2 alphagb1 = 0.35
++betagb1 = 0.03 vgb1 = 300 vevb = 0.075
++alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17
++vecb = 0.026 voxh = 5 deltavox = 5E-3
++aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 2.659147E-10/swr_tox_hv cgdo = 2.659147E-10/swr_tox_hv
++cgeo = 3E-10/swr_tox_hv cjswg = 1E-10 mjswg = 0.5
++cgsl = 7.792173E-11/sqrt(sw_rdsw_nthick) cgdl = 7.792173E-11/sqrt(sw_rdsw_nthick) ckappa = 0.24
++cf = 0 clc = 1E-8 cle = 0
++dlc = -1.469717E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0.39
++acde = 0.5 voffcv = -0.5
+//*** Temperature coefficient ***
++tnom = 27 ute = -1.283217 ucste = -4.775E-3
++ud1 = 0 kt1 = -7.39318E-2 kt1l = -4.44052E-8
++kt2 = 0 ua1 = 3.000582E-9 ub1 = -3.824957E-18
++uc1 = -5.6E-11 at = 2.93335E4 tcjswg = 0
++tpbswg = 0 tcjswgd = 0 tpbswgd = 0
++cth0 = 1E-5 prt = 0 rth0 = 0
++ntrecf = 0 ntrecr = 0 xbjt = 0.7
++xdif = 1 xrec = 1 xtun = 0
++xdifd = 1 xrecd = 1 xtund = 0
++wth0 = 0 tvbci = 0 tbgasub = 7.02E-4
++tbgbsub = 1.108E3
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
++rbsb = 50 rbdb = 50 gbmin = 1E-12
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Stress Effect Related Parameter ***
++saref = 1E-6 sbref = 1E-6 wlod = 0
++ku0 = 0 kvsat = 0 kvth0 = 0
++tku0 = 0 llodku0 = 0 wlodku0 = 0
++llodvth = 0 wlodvth = 0 stk2 = 0
++lodk2 = 1 steta0 = 0 lodeta0 = 1
++steta0cv = 0 lodeta0cv = 1
+//***Material Properties***
++eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7
++bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10
++agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12
++bgbc2p = 7.4567E11 vtm00 = 0.026
+
+
+
+ends pmos_1p8v_base
+******************************************************************
+******************************************************************
+// -----------------------------------------------------------
+
+inline subckt pmos_3p3v_sbc (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical, instance parameters:
+parameters
++ as = swx_total_sarea * 0.5
++ ad = swx_total_darea * 0.5
++ pd = swx_total_dperim * 0.5
++ ps = swx_total_sperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.15e-6 * nf
++ psbcp = 0
++ agbcp = 0.15e-6 * 0.075e-6 * nf
++ agbcp2 = 0.15e-6 * 0.075e-6 * nf
++ aebcp = 4*0.15e-6*0.225e-6
+// + aebcp = swx_active_area - (as+ad)
+
+
+pmos_3p3v_sbc (d g s e p) pthick_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_3p3v_sbc
+
+// -----------------------------------------------------------
+
+inline subckt pmos_3p3v_tg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.5*(swx_total_sdperim-2*w)
++ psbcp = 0.5*(swx_total_sdperim-2*w)
++ agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
+//+ aebcp = swx_active_area - (as+ad)
+
+
+pmos_3p3v_tg (d g s e p) pthick_base l=l
++ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly
++ nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_3p3v_tg
+
+// -----------------------------------------------------------
+
+inline subckt pmos_3p3v_hg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = swx_total_sdperim-2*w
++ psbcp = swx_total_sdperim-2*w
++ agbcp = (swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
+//+ aebcp = swx_active_area - (as+ad)
+
+
+pmos_3p3v_hg (d g s e p) pthick_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_3p3v_hg
+
+
+// ===========================================================================
+
+inline subckt pthick_base (d g s e p)
+
+parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp
+
+pthick_base (d g s e p) pmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+model pmosthick bsimsoi
+//*** Flag Parameter ***
++version = 4.5 soimod = 0 shmod = 1
++binunit = 1 paramchk = 0 mobmod = 1
++capmod = 3 rdsmod = 1 igcmod = 1
++igbmod = 1 rgatemod = 1 rbodymod = 1
++fnoimod = 1 tnoimod = 0 mtrlmod = 0
++vgstcvmod = 1 gidlmod = 0 iiimod = 0
++fdmod = 0 minr = 1E-60 type = p
+//*** Geometry Range Parameter ***
++lmin = 0 lmax = 1 wmin = 0
++wmax = 1
+//*** Process Parameter ***
++tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv
++dtoxcv = -3.111883E-9 xj = 3E-8 nch = 8E17
++nsub = 5E14 ngate = 3.8E19 nsd = 2E20
++ados = 1.332 bdos = 0.86892
+//*** Vth Related Parameter ***
++vth0 = -0.512 + sw_vth0_pthick k1 = 0.23116 k1w1 = 0
++k1w2 = 0 k2 = -0.04185 k3 = 0
++k3b = 0 kb1 = 1 w0 = 2.5E-6
++lpe0 = 4.161339E-7 lpeb = 0 dvt0 = 2.2
++dvt1 = 0.53 dvt2 = -0.032 dvt0w = 0
++dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1
++dvtp0 = 0 dvtp1 = 0 dvtp2 = 0
++dvtp3 = 0 dvtp4 = 0 vsce = 0
++cdsbs = 0
+//*** Mobility Related Parameter ***
++u0 = 5.37625E-3 * sw_u0_pthick ua = 0 ub = 2.55345E-19
++uc = -2.325E-11 ud = 0 eu = 1
++ucs = 1 vsat = 4.648939E4 lvsat = 0.145994
++a0 = 0.105474 la0 = 7.09237E-2 ags = 3.0958
++lags = 0.999946 b0 = 0 b1 = 5.634546E-8
++keta = -0.6 ketas = 0 a1 = 0
++a2 = 1 rdsw = 420.5 * sw_rdsw_pthick rdw = 50
++rdwmin = 0 rsw = 50 rswmin = 0
++prwb = 0 prwg = -3E-5 wr = 1
+//*** Subthreshold Related Parameter ***
++voff = 0 nfactor = 0.5 eta0 = 0.159802
++leta0 = 0.994516 etab = -0.07 eta0cv = 0.08
++etabcv = -0.07 dsub = 0.825467 ldsub = 2.03115E-2
++cit = 1.956591E-3 cdsc = 2.4E-4 cdscb = 0
++cdscd = 0
+//*** dW and dL Parameter ***
++lint = 0 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 0 wln = 1 ww = 0
++wwn = 1 wwl = 0 xw = 0
++xl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 1.667682 pdiblc1 = 3.84369E-2 pdiblc2 = 1.000168E-5
++pdiblcb = 0 drout = 4.316444 ldrout = 0
++pvag = 9.66412E-2 delta = 0.05 alpha0 = 0
++fbjtii = 0 beta0 = 0 beta1 = 0
++beta2 = 0.1 vdsatii0 = 0.9 tii = 0
++lii = 0 esatii = 1E7 sii0 = 0.5
++sii1 = 0.1 sii2 = 0 siid = 0
++agidl = 0 bgidl = 2.3E9 cgidl = 0.5
++egidl = 1.2 rgidl = 1 kgidl = 0
++fgidl = 0 agisl = 0 bgisl = 2.3E9
++cgisl = 0 egisl = 1.2 rgisl = 1
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 1E3 rbsh = 100 rhalo = 1E15
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.31 bigc = 0.024 cigc = 0.03
++aigsd = 0.31 bigsd = 0.024 cigsd = 0.03
++nigc = 1 pigcd = 1 poxedge = 1
++dlcig = 0 toxqm = 1E-8 ntox = 1
++toxref = 2.5E-9 ebg = 1.2 alphagb1 = 0.35
++betagb1 = 0.03 vgb1 = 300 vevb = 0.075
++alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17
++vecb = 0.026 voxh = 5 deltavox = 5E-3
++aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 2.659147E-10/swr_tox_hv cgdo = 2.659147E-10/swr_tox_hv
++cgeo = 3E-10/swr_tox_hv cjswg = 1E-10 mjswg = 0.5
++cgsl = 7.792173E-11/sqrt(sw_rdsw_nthick) cgdl = 7.792173E-11/sqrt(sw_rdsw_nthick) ckappa = 0.24
++cf = 0 clc = 1E-8 cle = 0
++dlc = -1.469717E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0.39
++acde = 0.5 voffcv = -0.5
+//*** Temperature coefficient ***
++tnom = 27 ute = -1.347492 ucste = -4.775E-3
++ud1 = 0 kt1 = -0.165 kt1l = -6.158157E-8
++kt2 = 0.022 ua1 = 3.000582E-9 ub1 = -3.824957E-18
++uc1 = -5.6E-11 at = 5.95E4 tcjswg = 0
++tpbswg = 0 tcjswgd = 0 tpbswgd = 0
++cth0 = 1E-5 prt = 0 rth0 = 0
++ntrecf = 0 ntrecr = 0 xbjt = 0.7
++xdif = 1 xrec = 1 xtun = 0
++xdifd = 1 xrecd = 1 xtund = 0
++wth0 = 0 tvbci = 0 tbgasub = 7.02E-4
++tbgbsub = 1.108E3
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
++rbsb = 50 rbdb = 50 gbmin = 1E-12
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Stress Effect Related Parameter ***
++saref = 1E-6 sbref = 1E-6 wlod = 0
++ku0 = 0 kvsat = 0 kvth0 = 0
++tku0 = 0 llodku0 = 0 wlodku0 = 0
++llodvth = 0 wlodvth = 0 stk2 = 0
++lodk2 = 1 steta0 = 0 lodeta0 = 1
++steta0cv = 0 lodeta0cv = 1
+//***Material Properties***
++eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7
++bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10
++agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12
++bgbc2p = 7.4567E11 vtm00 = 0.026
+
+
+
+ends pthick_base
+******************************************************************
+******************************************************************
+
+model ps_nsoi1_lls bsimsoi type=n
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.034 bdos = 0.6
+***** Vth Related Parameter ***
++vth0 = 0.35 + sw_vth0_nmos_lowvt - 0.085 k1 = 0.2 k1w1 = 0
++k1w2 = 0 k2 = -0.15 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 1.7E-7 dvt0 = 2.2 dvt1 = 0.53
++dvt2 = -0.032 dvt0w = 0 dvt1w = 0
++dvt2w = 0 nlx = 1.74E-7
+***** Mobility Related Parameter ***
++u0 = 150*sw_u0_nmos_lowvt ua = 0 ub = 0
++uc = 0 vsat = 4.4E4 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_nmos_lowvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.02628 nfactor = 0.6 eta0 = 0.0736
++etab = 0 dsub = 0.05 cit = 0
++cdsc = 9E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = 1E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0 lpclm = 0 wpclm = 0.25
++pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 7.5E-3
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E8
++cgidl = 0 egidl = 0.72 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8
++iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4
++istun = 1E-5 ln = 1E-11 vrec0 = 0.075
++vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7
++vabjt = 9.7 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 1.7 lminv = -0.017 wminv = 0.118
+***** Gate-to-body tunneling parameters ***
++aigc = 0.01596 bigc = 0 cigc = 0.0273
++aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2
++nigc = 4 pigcd = 0.5 dlcig = 1E-9
++ntox = 1.024 toxref = 1.8E-9 ebg = 1.15
++alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200
++vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06
++vgb2 = 200 vecb = 3
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_lowvt mjswg = 0.6
++cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.35E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++voffcv = -0.2
+***** Temperature coefficient ***
++tnom = 22 ute = -1.5 kt1 = -0.165
++kt1l = 0 kt2 = 0.022 ua1 = 0
++ub1 = 0 uc1 = -5.6E-11 at = 100
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+***** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+***** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++minvcv = 0
++vsdfb = -5.0
++vsdth = -3.0
++csdmin = 1.0e-4
+
+******************************************************************
+******************************************************************
+
+
+model ps_nsoi2_lls bsimsoi type=n
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.034 bdos = 0.6
+***** Vth Related Parameter ***
++vth0 = 0.46 + sw_vth0_nmos_highvt k1 = 0.2 k1w1 = 0
++k1w2 = 0 k2 = -0.15 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 1.7E-7 dvt0 = 2.2 dvt1 = 0.53
++dvt2 = -0.032 dvt0w = 0 dvt1w = 0
++dvt2w = 0 nlx = 1.74E-7
+***** Mobility Related Parameter ***
++u0 = 100*sw_u0_nmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 4.4E4 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_nmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.02628 nfactor = 0.6 eta0 = 0.0736 * 0.85
++etab = 0 dsub = 0.05 cit = 0
++cdsc = 9E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = 1.6E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0 lpclm = 0 wpclm = 0.25
++pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 7.5E-3
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E8
++cgidl = 0 egidl = 0.72 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8
++iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4
++istun = 1E-5 ln = 1E-11 vrec0 = 0.075
++vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7
++vabjt = 9.7 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 1.7 lminv = -0.017 wminv = 0.118
+***** Gate-to-body tunneling parameters ***
++aigc = 0.01596 bigc = 0 cigc = 0.0273
++aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2
++nigc = 4 pigcd = 0.5 dlcig = 1E-9
++ntox = 1.024 toxref = 1.8E-9 ebg = 1.15
++alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200
++vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06
++vgb2 = 200 vecb = 3
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6
++cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.35E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++voffcv = -0.2
+***** Temperature coefficient ***
++tnom = 22 ute = -1.5 kt1 = -0.165
++kt1l = 0 kt2 = 0.022 ua1 = 0
++ub1 = 0 uc1 = -5.6E-11 at = 100
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+***** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+***** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++minvcv = 0
++vsdfb = -5.0
++vsdth = -3.0
++csdmin = 1.0e-4
+
+******************************************************************
+******************************************************************
+
+model ps_psoi1_lls bsimsoi type=p
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+***** Vth Related Parameter ***
++vth0 = -0.367 + sw_vth0_pmos_lowvt - 0.080 k1 = 0.01 k1w1 = 0
++k1w2 = 0 k2 = 0 k3 = -4
++k3b = 0 kb1 = 0 w0 = 0
++lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09
++dvt1 = 0.214 dvt2 = 0 dvt0w = 0
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 0
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+***** Mobility Related Parameter ***
++u0 = 44*sw_u0_pmos_lowvt*1.3 ua = 0 ub = 0
++uc = 0 vsat = 1E6 * 2 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_pmos_lowvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 2.21 eta0 = 0.08
++etab = -1E-3 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = -2.7E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 1E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0.675 * 3 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E9
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
+***** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 9E-3 bigsd = 0 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++ntox = 4.5 toxref = 1.8E-9 ebg = 1.2
++alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300
++vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05
++vgb2 = 17 vecb = 0.026
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_lowvt mjswg = 0.5
++cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1
++cf = 0 clc = 1E-8 cle = 0
++dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++acde = 1 moin = 500 voffcv = -0.5
+***** Temperature coefficient ***
++tnom = 22 ute = -0.73 kt1 = -0.042
++kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0
++ub1 = 0 uc1 = 0 at = 3.4E4
++tcjswg = 0 cth0 = 1E-6 prt = 0
++rth0 = 0.2 ntrecf = 0 ntrecr = 0
++xbjt = 1.15 xdif = 1.11 xrec = 0.9
++xtun = 0 wth0 = 4E-6
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+***** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++vsdfb = -4.0
++vsdth = -2.0
++csdmin = 1.0e-4
+
+******************************************************************
+******************************************************************
+
+model ps_psoi2_lls bsimsoi
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 type=p
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+***** Vth Related Parameter ***
++vth0 = -0.46 + sw_vth0_pmos_highvt - 0.1 k1 = 0.01 k1w1 = 0
++k1w2 = 0 k2 = 0 k3 = -4
++k3b = 0 kb1 = 0 w0 = 0
++lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09
++dvt1 = 0.214 dvt2 = 0 dvt0w = 0
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 0
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+***** Mobility Related Parameter ***
++u0 = 25*sw_u0_pmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 1E6 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_pmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 2.21 eta0 = 0.08
++etab = -1E-3 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = -1E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 3E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0.675 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E9
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
+***** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 9E-3 bigsd = 0 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++ntox = 4.5 toxref = 1.8E-9 ebg = 1.2
++alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300
++vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05
++vgb2 = 17 vecb = 0.026
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_highvt mjswg = 0.5
++cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1
++cf = 0 clc = 1E-8 cle = 0
++dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++acde = 1 moin = 500 voffcv = -0.5
+***** Temperature coefficient ***
++tnom = 22 ute = -0.73 kt1 = -0.042
++kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0
++ub1 = 0 uc1 = 0 at = 3.4E4
++tcjswg = 0 cth0 = 1E-6 prt = 0
++rth0 = 0.2 ntrecf = 0 ntrecr = 0
++xbjt = 1.15 xdif = 1.11 xrec = 0.9
++xtun = 0 wth0 = 4E-6
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+***** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++vsdfb = -4.0
++vsdth = -2.0
++csdmin = 1.0e-4
+
+******************************************************************
+******************************************************************
+
+model res_mim resistor
++l = 5u
++w = 2u
++rsh = 7.2 * sw_res_mim
++tc1=8.96e-4
++tc2=1.49e-6
+******************************************************************
+******************************************************************
+
+** template model for evaluation purposes only
+** simulator lang=spectre
+model res_nplus_poly resistor
+
++l = 5u
++w = 2u
++rsh = 3000 * sw_res_nplus_poly
+
+******************************************************************
+******************************************************************
+
+** template model for evaluation purposes only
+** simulator lang=spectre
+model res_nsil_poly resistor
+
++l = 5u
++w = 2u
++rsh = 15 * sw_res_nsil_poly
+
+******************************************************************
+******************************************************************
+
+inline subckt res_pplus_poly (r1 r2)
+
+parameters w=1u l=1u
+
+ res_pplus_poly (r3 r4) main_res w=(w-0.0285u+sw_dvar_polycd*2) l=l+0.2055u
+ rhead1 (r1 r3) head_res w=w l=1u
+ rhead2 (r2 r4) head_res w=w l=1u
+
+ model main_res resistor
++rsh = 185 * sw_res_pplus_poly // extracted value = 184.73
++tc1 = 6.849E-04
++tc2 = 5.464E-07
++tnom = 25
+
+ model head_res resistor
++rsh = 0.5 * 17.5956 * sw_res_head_poly
++tc1 = -4.164E-03
++tc2 = -3.802E-06
++tnom = 25
+
+
+ends res_pplus_poly
+******************************************************************
+******************************************************************
+
+
+** template model for evaluation purposes only
+simulator lang=spectre
+subckt res_pplus (POS NEG)
+parameters
+
++ l = 5u
++ w = 2u
++ rsh = 3100
+
+** Netlist:
+Rdevice (POS NEG) resistor r=(rsh*l*sw_res_pplus)/w
+ends res_pplus
+
+******************************************************************
+******************************************************************
+
+// Pplus Silicide Poly resistor
+
+inline subckt res_psil_poly (r1 r2)
+
+parameters w=1u l=1u
+
+ res_psil_poly (r3 r4) main_res w=(w+0.0188u+sw_dvar_polycd*2) l=l+0.27u
+ rhead1 (r1 r3) head_res w=w l=1u
+ rhead2 (r2 r4) head_res w=w l=1u
+
+ model main_res resistor
++rsh = 15 * sw_res_psil_poly // extracted value = 16.36
++tc1 = 2.545E-03
++tnom = 25
+
+ model head_res resistor
++rsh = 0.5 * 7.73 * sw_res_head_poly
++tc1 = 9.381E-04
++tc2 = -3.305E-07
++tnom = 25
+
+
+ends res_psil_poly
+
diff --git a/libraries/sky90fd_fd_pr/models/modular_models.scs b/libraries/sky90fd_fd_pr/models/modular_models.scs
new file mode 100755
index 0000000..75a7978
--- /dev/null
+++ b/libraries/sky90fd_fd_pr/models/modular_models.scs
@@ -0,0 +1,3305 @@
+***********************************************************
+* SKY90-FD FDSOI Spice Models
+* Generating model files for flow : copper7lm
+* Model Type: modular models
+* Version: 1.09.03C
+* Date: 08/22/2022
+***********************************************************
+*
+*
+simulator lang = spectre
+section global
+**************************************************************
+* Global parameters, functions, and Monte Carlo
+* Corner parameters descriptions: Corner_Parameters.html
+**************************************************************
+
+***********************************
+* Global functions
+* ---------------------------------
+
+parameters swr_tox_lv = sw_tox_lv / 1.8e-9
+parameters swr_tox_hv = sw_tox_hv / 6.2e-9
+
+* -------- Calculated Source/Drain instance parameters -----
+real swf_fet_as (real nf, real w) {
+ return ( (nf-1)*0.25u + 2*0.225u) * w * 0.5
+}
+real swf_fet_ps (real nf, real w) {
+ return (nf-1)*0.25u + 2*0.225u + w*(nf+1)
+}
+* --- SBC Only
+real swf_fet_sbc_as (real nf, real w) {
+ return ( (nf-1)*0.25u + 2*0.225u) * (w+0.15u) * 0.5
+}
+real swf_fet_sbc_ps (real nf, real w) {
+ return (nf-1)*0.25u + 2*0.225u + (w+0.15u)*(nf+1)
+}
+
+* -------- T-gate and H-gate instance parameters -----
+real swf_psbcp (real nf, real nbc) {
+ return ( (nf-1)*0.25u + 2*0.225u ) * 0.5 * nbc
+}
+real swf_agbcp (real nf, real l, real nbc) {
+ return ((nf-1)*0.25u + nf*l + 2*0.225u) * 0.075u * nbc
+}
+real swf_aebcp (real nf, real l, real nbc) {
+ return ((nf-1)*0.25u + nf*l + 2*0.225u) * 0.375u * nbc
+}
+* --- SBC Only
+real swf_psbcp_sbc (real nf) {
+ return ( floor(nf/2)+1 ) * 0.225u
+}
+real swf_agbcp_sbc (real nf) {
+ return 2*nf*0.075u*0.15u
+}
+real swf_aebcp_sbc (real nf) {
+ return (floor(nf/2) + 1)*2*0.375u*0.15u
+}
+
+********************************************************
+endsection global
+**********************************
+simulator lang = spectre
+section capacitors
+**********************************
+******************************************************************
+******************************************************************
+
+subckt cap_metals pos neg
+
+parameters l nf toplev botlev
+
+//numlayers=(m1_used+m2_used+m3_used+m4_used+m5_used)
+parameters m1_used=(botlev<=1 && toplev>=1)
+parameters m2_used=(botlev<=2 && toplev>=2)
+parameters m3_used=(botlev<=3 && toplev>=3)
+parameters m4_used=(botlev<=4 && toplev>=4)
+parameters m5_used=(botlev<=5 && toplev>=5)
+
+//"IsM2Bot" is 1 if M2 is the bottom layer of the stack
+//"IsM2Shielded" is 1 if M2 is in the stack, but is not the bottom metal
+parameters ism1bot=(botlev==1)
+parameters ism2bot=(botlev==2)
+parameters ism3bot=(botlev==3)
+parameters ism4bot=(botlev==4)
+parameters ism5bot=(botlev==5)
+
+parameters ism2shielded=(botlev<2 && toplev>=2)
+parameters ism3shielded=(botlev<3 && toplev>=3)
+parameters ism4shielded=(botlev<4 && toplev>=4)
+parameters ism5shielded=(botlev<5 && toplev>=5)
+
+parameters c_allfingers=1e-15*nf*(m1_used+m2_used+m3_used+m4_used+m5_used)*(log(pow(2.71828,(l/1e-6))-1+exp(3.29))-2.95)*0.0771
+//parameters c_allfingers=1e-15*nf*(m1_used+m2_used+m3_used+m4_used+m5_used)*(log(exp(l/1e-6)-1+exp(3.29))-2.95)*0.0771
+parameters c_pos=1e-15*nf*(l/1e-6 + 2.5)*(ism1bot*0.015 + ism2bot*0.0095 + ism3bot*0.0075 + ism4bot*0.0065 + ism5bot*0.0059 + ism2shielded*0.0027 + ism3shielded*0.0043 + ism4shielded*0.0040 + ism5shielded*0.0036)
+parameters c_neg=c_pos
+
+cdevice (pos neg) capacitor c=c_allfingers*sw_cap_metals
+cc_pos (pos 0) capacitor c=c_pos
+cc_neg (neg 0) capacitor c=c_neg
+
+ends cap_metals
+
+
+******************************************************************
+******************************************************************
+
+subckt cap_mim pos neg
+
+parameters w l
+
+cap_mim (pos neg) capacitor c=sw_cap_mim_ca * (w+sw_cap_mim_dw) * (l+sw_cap_mim_dw)
+
+ends cap_mim
+
+
+endsection capacitors
+**********************************
+**********************************
+simulator lang = spectre
+section diodes
+**********************************
+******************************************************************
+******************************************************************
+// -----------------------------------------------------------
+// Forward bias diode model
+// -----------------------------------------------------------
+
+subckt diode_nplus_vtp ( a c )
+ parameters w = 0.8u
++ swx_is = exp(35.5*(1-sw_res_nplus_poly)*0.2) // 35.5 is q/(nkT)
+
+d0 ( a c) diode_main area=w
+d1 ( a c) diode_recombine area=w
+d2 ( c a) diode_reverse_leak area=w
+
+model diode_main diode
+//*** Flag Parameter ***
++level = 1
+//*** Junction Diode Parameter ***
++is = 1.130276E-13 * swx_is
++n = 1.093706
+//*** Breakdown Parameter ***
++vb = 5.725628 ibv = 1E-3 nz = 9.077509
+//*** Parasitic Resistance Parameter ***
++rs = 2.806622E-5
+//*** Temperature Effects Parameter ***
++tlev = 0 tlevc = 0 eg = 1.11705
++xti = 3.637179 tbv1 = 0 tnom = 25
++trs = 1.206836E-3 cta = 0 ctp = 0
++pta = 0 ptp = 0
+//*** Junction Diode Model Control Parameter ***
++imax = 1E12
+//*** Capacitance Parameter ***
++cjo = 1E-10*3.14 / sw_rdsw_pmos_lowvt vj = 0.6 mj = 0.5
++cjsw = 0 vjsw = 0.8 mjsw = 0.33
++fc = 0.5
+
+// ***********************
+
+model diode_recombine diode
+//*** Flag Parameter ***
++level = 1
+//*** Junction Diode Parameter ***
++is = 6.694065E-9 n = 2.147432
+//*** Breakdown Parameter ***
++bv = 6 ibv = 0.01 nz = 21.448254
+//*** Parasitic Resistance Parameter ***
++rs = 4.730854
+//*** Temperature Effects Parameter ***
++tlev = 2 eg = 0.449216 gap1 = 8.693526E-3
++gap2 = 657.504199 xti = 0.1711 tbv1 = 4.661495E-3
++tnom = 25
+// trs = -7.32374E-2
+//*** Junction Diode Model Control Parameter ***
++imax = 1e12
+
+// ***********************
+
+model diode_reverse_leak diode
+//*** Junction Diode Parameter ***
++is = 1.136472E-8 n = 2.543035
+//*** Parasitic Resistance Parameter ***
++rs = 267.790479 * sw_rdsw_pmos_lowvt
+//*** Temperature Effects Parameter ***
++eg = 0.851245 xti = 1.870884 tnom = 25
+//+trs = -7.622322E-3
+//+minr = 1
+//*** Junction Diode Model Control Parameter ***
++imax = 1e12
+
+ends diode_nplus_vtp
+
+******************************************************************
+******************************************************************
+// -----------------------------------------------------------
+// Forward bias diode model
+// -----------------------------------------------------------
+
+subckt diode_pplus_vtn ( a c )
+ parameters w = 0.8u
++ swx_is = exp(35.5*(1-sw_res_pplus_poly)*0.2) // 35.5 is q/(nkT)
+
+d0 ( a c) diode_main area=w
+d1 ( a c) diode_recombine area=w
+d2 ( c a) diode_reverse_leak area=w
+
+model diode_main diode
+//*** Flag Parameter ***
++level = 1
+//*** Junction Diode Parameter ***
++is = 9.25927E-14 * swx_is n = 1.070162
+//*** Breakdown Parameter ***
++vb = 5.725628 ibv = 1E-3 nz = 9.077509
+//*** Parasitic Resistance Parameter ***
++rs = 3.329246E-5
+//*** Temperature Effects Parameter ***
++tlev = 0 tlevc = 0 eg = 1.106282
++xti = 3.943658 tbv1 = 0 tnom = 25
++trs = 1.508794E-3 cta = 0 ctp = 0
++pta = 0 ptp = 0
+//*** Junction Diode Model Control Parameter ***
++imax = 1E12
+//*** Capacitance Parameter ***
++cjo = 1E-10*3.14 / sw_rdsw_nmos_lowvt vj = 0.6 mj = 0.5
++cjsw = 0 vjsw = 0.8 mjsw = 0.33
++fc = 0.5
+
+// ***********************
+
+model diode_recombine diode
+//*** Flag Parameter ***
++level = 1 minr = 1E-3
+//*** Junction Diode Parameter ***
++is = 3.43374E-8 n = 2.647693
+//*** Breakdown Parameter ***
++bv = 7.5 ibv = 0.01 nz = 1
+//*** Parasitic Resistance Parameter ***
++rs = 34.156126
+//*** Temperature Effects Parameter ***
++tlev = 2 eg = 0.262786 gap1 = 1.08734E-2
++gap2 = 867.969167 xti = 0.31759 tbv1 = 0
++tnom = 25
+// trs = -0.124572
+//*** Junction Diode Model Control Parameter ***
++imax = 1e12
+
+// ***********************
+
+model diode_reverse_leak diode
+//*** Junction Diode Parameter ***
++is = 1.202149E-14 n = 0.500069 ikf = 5.16894E-2
+//*** Parasitic Resistance Parameter ***
++rs = 5.892906E3 * sw_rdsw_nmos_lowvt
+//*** Temperature Effects Parameter ***
++eg = 0.679891 xti = 0.645549 tnom = 25
+// +trs = -1.199791E-3
+//*** Junction Diode Model Control Parameter ***
++imax = 1e12
+
+ends diode_pplus_vtn
+
+
+endsection diodes
+**********************************
+**********************************
+simulator lang = spectre
+section fet
+**********************************
+******************************************************************
+******************************************************************
+
+inline subckt base_nmos_1p2v_highvt_bodytie (d g s e p)
+
+parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
++ swx_align_poly
+
+base_nmos_1p2v_highvt_bodytie (d g s e p) nmos_1p2v_highvt_bodytie_model
++ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model nmos_1p2v_highvt_bodytie_model bsimsoi type=n
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.034 bdos = 0.6
+***** Vth Related Parameter ***
++vth0 = 0.46 + sw_vth0_nmos_highvt k1 = 0.2 k1w1 = 0
++k1w2 = 0 k2 = -0.15 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 1.7E-7 dvt0 = 2.2 dvt1 = 0.53
++dvt2 = -0.032 dvt0w = -swx_align_poly*1.14e7*0.7 dvt1w = 0
++dvt2w = 0 nlx = 1.74E-7
+***** Mobility Related Parameter ***
++u0 = 100*sw_u0_nmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 4.4E4 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_nmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.02628 nfactor = 0.6 eta0 = 0.0736 * 0.85
++etab = 0 dsub = 0.05 cit = 0
++cdsc = 9E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = 1.6E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0 lpclm = 0 wpclm = 0.25
++pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 7.5E-3
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E8
++cgidl = 0 egidl = 0.72 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8
++iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4
++istun = 1E-5 ln = 1E-11 vrec0 = 0.075
++vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7
++vabjt = 9.7 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 1.7 lminv = -0.017 wminv = 0.118
+***** Gate-to-body tunneling parameters ***
++aigc = 0.01596 bigc = 0 cigc = 0.0273
++aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2
++nigc = 4 pigcd = 0.5 dlcig = 1E-9
++ntox = 1.024 toxref = 1.8E-9 ebg = 1.15
++alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200
++vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06
++vgb2 = 200 vecb = 3
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6
++cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.35E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++voffcv = -0.2
+***** Temperature coefficient ***
++tnom = 22 ute = -1.5 kt1 = -0.165
++kt1l = 0 kt2 = 0.022 ua1 = 0
++ub1 = 0 uc1 = -5.6E-11 at = 100
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+***** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+***** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++minvcv = 0
++vsdfb = -5.0
++vsdth = -3.0
++csdmin = 1.0e-4
+
+ends base_nmos_1p2v_highvt_bodytie
+******************************************************************
+******************************************************************
+
+inline subckt base_nmos_1p2v_lowvt_bodytie (d g s e p)
+
+parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
++ swx_align_poly nbc
+
+base_nmos_1p2v_lowvt_bodytie (d g s e p) base_nmos_1p2v_lowvt_bodytie_model
++ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model base_nmos_1p2v_lowvt_bodytie_model bsimsoi type=n
++ wmax = 5.1u lmax = 0.4u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.034 bdos = 0.6
+***** Vth Related Parameter ***
++vth0 = 0.35 + sw_vth0_nmos_lowvt - 0.008 k1 = 0.2 k1w1 = 0
++k1w2 = 0 k2 = 0.2245 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 1.7E-7 dvt0 = 3.3 dvt1 = 0.53
++dvt2 = -0.032 dvt0w = -swx_align_poly*1.14e7 dvt1w = 0
++dvt2w = 0 nlx = 1.74E-7
+***** Mobility Related Parameter ***
++u0 = 132 * sw_u0_nmos_lowvt * 1.2 ua = 0 ub = 0
++uc = 0 vsat = 4.4E4 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60 prwb = 0
++prwg = 0 wr = 0.9
+***** Subthreshold Related Parameter ***
++voff = -0.0495 nfactor = 0.714 eta0 = 0.01
++etab = 0 dsub = 0.05 cit = 0
++cdsc = 9E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = 1E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -1.6245E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 6.6 lpclm = 0 wpclm = 0.01
++pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 0.117575
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E8
++cgidl = 0 egidl = 0.72 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8
++iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4
++istun = 1E-5 ln = 1E-11 vrec0 = 0.075
++vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7
++vabjt = 9.7 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 1.649 lminv = -0.01598 wminv = 0.177
+***** Gate-to-body tunneling parameters ***
++aigc = 0.01596 bigc = 0 cigc = 0.0273
++aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2
++nigc = 4 pigcd = 0.5 dlcig = 1E-9
++ntox = 1.024 toxref = 1.8E-9 ebg = 1.15
++alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200
++vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06
++vgb2 = 200 vecb = 3
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_lowvt mjswg = 0.6
++cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.35E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++voffcv = -0.2
+***** Temperature coefficient ***
++tnom = 22 ute = -1.5 kt1 = -0.165
++kt1l = 0 kt2 = 0.022 ua1 = 0
++ub1 = 0 uc1 = -5.6E-11 at = 100
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+***** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+***** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++minvcv = 0
++vsdfb = -5.0
++vsdth = -3.0
++csdmin = 1.0e-4
+
+ends base_nmos_1p2v_lowvt_bodytie
+
+******************************************************************
+******************************************************************
+
+inline subckt base_pmos_1p2v_highvt_bodytie (d g s e p)
+
+parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
++ swx_align_poly
+
+base_pmos_1p2v_highvt_bodytie (d g s e p) pmos_1p2v_highvt_bodytie_model
++ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model pmos_1p2v_highvt_bodytie_model bsimsoi
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 type=p
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+***** Vth Related Parameter ***
++vth0 = -0.46 + sw_vth0_pmos_highvt - 0.1 k1 = 0.01 k1w1 = 0
++k1w2 = 0 k2 = 0 k3 = -4
++k3b = 0 kb1 = 0 w0 = 0
++lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09
++dvt1 = 0.214 dvt2 = 0 dvt0w = -swx_align_poly*1.14e7
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 0
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+***** Mobility Related Parameter ***
++u0 = 25*sw_u0_pmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 1E6 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_pmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 2.21 eta0 = 0.08
++etab = -1E-3 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = -1E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 3E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0.675 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E9
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
+***** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 9E-3 bigsd = 0 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++ntox = 4.5 toxref = 1.8E-9 ebg = 1.2
++alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300
++vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05
++vgb2 = 17 vecb = 0.026
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_highvt mjswg = 0.5
++cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1
++cf = 0 clc = 1E-8 cle = 0
++dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++acde = 1 moin = 500 voffcv = -0.5
+***** Temperature coefficient ***
++tnom = 22 ute = -0.73 kt1 = -0.042
++kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0
++ub1 = 0 uc1 = 0 at = 3.4E4
++tcjswg = 0 cth0 = 1E-6 prt = 0
++rth0 = 0.2 ntrecf = 0 ntrecr = 0
++xbjt = 1.15 xdif = 1.11 xrec = 0.9
++xtun = 0 wth0 = 4E-6
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+***** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++vsdfb = -4.0
++vsdth = -2.0
++csdmin = 1.0e-4
+
+
+ends base_pmos_1p2v_highvt_bodytie
+******************************************************************
+******************************************************************
+
+inline subckt base_pmos_1p2v_lowvt_bodytie (d g s e p)
+
+parameters l w nf as ad pd ps pdbcp psbcp agbcp agbcp2 aebcp
++ swx_align_poly nbc
+
+base_pmos_1p2v_lowvt_bodytie (d g s e p) base_pmos_1p2v_lowvt_bodytie_model
++ l=l w=nf*w nf=nf as=as ad=ad pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model base_pmos_1p2v_lowvt_bodytie_model bsimsoi type=p
++ wmax = 5.1u lmax = 0.4u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+***** Vth Related Parameter ***
++vth0 = -0.367 + sw_vth0_pmos_lowvt - 0.028 k1 = 0.01 k1w1 = 0
++k1w2 = 0 k2 = -0.12 k3 = -4
++k3b = 0 kb1 = 0 w0 = 0
++lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09
++dvt1 = 0.214 dvt2 = 0 dvt0w = -swx_align_poly*7.0e6
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 0
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+***** Mobility Related Parameter ***
++u0 = 44*(sw_u0_pmos_lowvt**0.8) * 1.3 ua = 0 ub = 0
++uc = 0 vsat = 1E6*5 * 2 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_pmos_lowvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 2.21 eta0 = 0.0276
++etab = -1E-3 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = -2.943E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -5.08E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0.675 * 2 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E9
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
+***** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 9E-3 bigsd = 0 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++ntox = 4.5 toxref = 1.8E-9 ebg = 1.2
++alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300
++vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05
++vgb2 = 17 vecb = 0.026
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_lowvt mjswg = 0.5
++cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1
++cf = 0 clc = 1E-8 cle = 0
++dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++acde = 1 moin = 500 voffcv = -0.5
+***** Temperature coefficient ***
++tnom = 22 ute = -0.73 kt1 = -0.042
++kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0
++ub1 = 0 uc1 = 0 at = 3.4E4
++tcjswg = 0 cth0 = 1E-6 prt = 0
++rth0 = 0.2 ntrecf = 0 ntrecr = 0
++xbjt = 1.15 xdif = 1.11 xrec = 0.9
++xtun = 0 wth0 = 4E-6
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+***** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++vsdfb = -4.0
++vsdth = -2.0
++csdmin = 1.0e-4
+
+ends base_pmos_1p2v_lowvt_bodytie
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_highvt_hg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 2
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+nmos_1p2v_highvt_hg (d g s b x) base_nmos_1p2v_highvt_hg
++ l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc
++ w=(w-2*sw_dvar_polycd) * nf
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_nmos_highvt + 0.1
+
+
+model base_nmos_1p2v_highvt_hg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 minr = 1E-60 type = n
+//*** Geometry Range Parameter ***
++lmax = 6E-7 wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.5838 bdos = 1.2
+//*** Vth Related Parameter ***
++vth0 = 0.468 k1 = 0.145671 k1w1 = 0
++k1w2 = 0 k2 = -0.203174 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 9.8E-8 dvt0 = 0.8815 dvt1 = 0.49265
++dvt2 = -0.032 dvt0w = 0.032 dvt1w = 0
++dvt2w = 0 dvtp0 = 1.3E-7 dvtp1 = 0
++dvtp2 = 0 dvtp3 = 0 dvtp4 = 0
++nlx = 1.74E-7
+//*** Mobility Related Parameter ***
++u0 = 129 * sw_u0_nmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 3.7E4 lvsat = -396
++wvsat = 2.304E3 a0 = 0.22824 ags = 0
++b0 = 0 b1 = 0 keta = 0
++ketas = 0 a1 = 0 a2 = 0.99
++rdsw = 60 * sw_rdsw_nmos_lowvt prwb = 0 prwg = 0
++wr = 0.85
+//*** Subthreshold Related Parameter ***
++voff = -3.47449E-2 lvoff = -3.1536E-3 wvoff = 3.942E-3
++nfactor = 1.2 eta0 = 1.97064E-2 etab = 0
++dsub = 0.0305 cit = 0 cdsc = 6.57E-3
++cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = 1E-9 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 1.7 lpclm = 0 wpclm = 0.25
++pdiblc1 = 0.01 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 7.5E-3
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 3.5E-13 lagidl = -1E-14
++wagidl = 3E-14 bgidl = 1E8 cgidl = 0
++egidl = 0.36 ntun = 10 ndiode = 1.5
++ndioded = 1.5 nrecf0 = 1.6 nrecf0d = 1.6
++nrecr0 = 10 nrecr0d = 10 isbjt = 1E-5
++idbjt = 1E-5 isdif = 5.13E-8 iddif = 4.5E-8
++isrec = 1E-4 idrec = 1E-4 istun = 1E-5
++ln = 1E-11 vrec0 = 0.075 vtun0 = 0
++nbjt = 1.215 lbjt0 = 2E-7 vabjt = 9.7
++aely = 0 ahli = 1E-15 rbody = 10
++rbsh = 100 rhalo = 1E15 minv = 1.088
++lminv = -0.017 wminv = 0.118
+//*** Gate-to-body tunneling parameters ***
++aigc = 1.45236E-2 bigc = 0 cigc = 1E-3
++aigsd = 1.12149E-2 laigsd = 0 bigsd = 3.99425E-3
++cigsd = 0.12088 nigc = 4 pigcd = 0.5
++dlcig = 1E-9 toxqm = 3.1E-9*swr_tox_lv ntox = 1.024
++toxref = 1.8E-9 ebg = 1.15 alphagb1 = 0.35
++betagb1 = 1E-4 vgb1 = 200 vevb = 0.3
++alphagb2 = 0.6136 betagb2 = 0.06 vgb2 = 200
++vecb = 3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.36E-10/swr_tox_lv cgdo = 3.36E-10/swr_tox_lv
++cgeo = 1E-10/swr_tox_lv cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6
++vsdfb = -5 vsdth = -3 csdmin = 1E-4
++cgsl = 4.5E-11/swr_tox_lv cgdl = 4.5E-11/swr_tox_lv ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.7855E-8 llc = 0 lwc = 0
++lwlc = 0 dlbg = 0 dwc = 0
++wlc = 0 wwc = 0 wwlc = 0
++dwbc = 9.102E-8 delvt = 0 ldelvt = -8E-3
++wdelvt = 7.2E-3 fbody = 0 moin = 15
++cfrcoeff = 1 noff = 1 voffcv = -0.2
++minvcv = 0.06
+//*** Temperature coefficient ***
++tnom = 27 ute = -1.5 kt1 = -0.231
++kt1l = -2E-8 kt2 = 0.022 ua1 = 1E-9
++ub1 = -1E-18 uc1 = -5.6E-11 at = 1E4
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Unknown Parameters ***
++gatetype = h dskip = yes
+ends nmos_1p2v_highvt_hg
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_highvt_sbc (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_sbc_as ( nf , w )
++ ad = swf_fet_sbc_as ( nf , w )
++ pd = swf_fet_sbc_ps ( nf , w )
++ ps = swf_fet_sbc_ps ( nf , w )
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp_sbc (nf)
++ psbcp = swf_psbcp_sbc (nf)
++ agbcp = swf_agbcp_sbc (nf)
++ agbcp2 = swf_agbcp_sbc (nf)
++ aebcp = swf_aebcp_sbc (nf)
+
+
+nmos_1p2v_highvt_sbc (d g s b x) base_nmos_1p2v_highvt_bodytie
++ swx_align_poly = 0 nbc=0
++ l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nmos_1p2v_highvt_sbc
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_highvt (d g s b)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.255u
++ swx_insidew_ds = 0.28u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
++ aebcp = swx_active_area - (as+ad)
+
+
+nmos_1p2v_highvt (d g s b) ps_nsoi2_lls
++ l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps
++ aebcp=aebcp
+
+ends nmos_1p2v_highvt
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_highvt_tg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 1
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+nmos_1p2v_highvt_tg (d g s b x) base_nmos_1p2v_highvt_tg
++ l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc
++ w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_nmos_highvt + 0.1
+
+
+model base_nmos_1p2v_highvt_tg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 minr = 1E-60 type = n
+//*** Geometry Range Parameter ***
++lmax = 6E-7 wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.5838 bdos = 1.2
+//*** Vth Related Parameter ***
++vth0 = 0.468 k1 = 0.145671 k1w1 = 0
++k1w2 = 0 k2 = -0.203174 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 9.8E-8 dvt0 = 0.8815 dvt1 = 0.49265
++dvt2 = -0.032 dvt0w = 0.032 dvt1w = 0
++dvt2w = 0 dvtp0 = 1.3E-7 dvtp1 = 0
++dvtp2 = 0 dvtp3 = 0 dvtp4 = 0
++nlx = 1.74E-7
+//*** Mobility Related Parameter ***
++u0 = 129 * sw_u0_nmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 3.7E4 lvsat = -396
++wvsat = 2.304E3 a0 = 0.22824 ags = 0
++b0 = 0 b1 = 0 keta = 0
++ketas = 0 a1 = 0 a2 = 0.99
++rdsw = 60 * sw_rdsw_nmos_highvt prwb = 0 prwg = 0
++wr = 0.85
+//*** Subthreshold Related Parameter ***
++voff = -3.47449E-2 lvoff = -3.1536E-3 wvoff = 3.942E-3
++nfactor = 1.2 eta0 = 1.97064E-2 etab = 0
++dsub = 0.0305 cit = 0 cdsc = 6.57E-3
++cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = 1E-9 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 1.7 lpclm = 0 wpclm = 0.25
++pdiblc1 = 0.01 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 7.5E-3
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 3.5E-13 lagidl = -1E-14
++wagidl = 3E-14 bgidl = 1E8 cgidl = 0
++egidl = 0.36 ntun = 10 ndiode = 1.5
++ndioded = 1.5 nrecf0 = 1.6 nrecf0d = 1.6
++nrecr0 = 10 nrecr0d = 10 isbjt = 1E-5
++idbjt = 1E-5 isdif = 5.13E-8 iddif = 4.5E-8
++isrec = 1E-4 idrec = 1E-4 istun = 1E-5
++ln = 1E-11 vrec0 = 0.075 vtun0 = 0
++nbjt = 1.215 lbjt0 = 2E-7 vabjt = 9.7
++aely = 0 ahli = 1E-15 rbody = 10
++rbsh = 100 rhalo = 1E15 minv = 1.088
++lminv = -0.017 wminv = 0.118
+//*** Gate-to-body tunneling parameters ***
++aigc = 1.45236E-2 bigc = 0 cigc = 1E-3
++aigsd = 1.12149E-2 laigsd = 0 bigsd = 3.99425E-3
++cigsd = 0.12088 nigc = 4 pigcd = 0.5
++dlcig = 1E-9 toxqm = 3.1E-9*swr_tox_lv ntox = 1.024
++toxref = 1.8E-9 ebg = 1.15 alphagb1 = 0.35
++betagb1 = 1E-4 vgb1 = 200 vevb = 0.3
++alphagb2 = 0.6136 betagb2 = 0.06 vgb2 = 200
++vecb = 3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.36E-10/swr_tox_lv cgdo = 3.36E-10/swr_tox_lv
++cgeo = 1E-10/swr_tox_lv cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6
++vsdfb = -5 vsdth = -3 csdmin = 1E-4
++cgsl = 4.5E-11/swr_tox_lv cgdl = 4.5E-11/swr_tox_lv ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.7855E-8 llc = 0 lwc = 0
++lwlc = 0 dlbg = 0 dwc = 0
++wlc = 0 wwc = 0 wwlc = 0
++dwbc = 9.102E-8 delvt = 0 ldelvt = -8E-3
++wdelvt = 7.2E-3 fbody = 0 moin = 15
++cfrcoeff = 1 noff = 1 voffcv = -0.2
++minvcv = 0.06
+//*** Temperature coefficient ***
++tnom = 27 ute = -1.5 kt1 = -0.231
++kt1l = -2E-8 kt2 = 0.022 ua1 = 1E-9
++ub1 = -1E-18 uc1 = -5.6E-11 at = 1E4
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Unknown Parameters ***
++gatetype = h dskip = yes
+
+
+ends nmos_1p2v_highvt_tg
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_lowvt_hg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 2
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+nmos_1p2v_lowvt_hg (d g s b x) base_nmos_1p2v_lowvt_bodytie
++ swx_align_poly=0 nbc=nbc
++ l=l w=(w-2*sw_dvar_polycd) nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nmos_1p2v_lowvt_hg
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_lowvt_sbc (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_sbc_as ( nf , w )
++ ad = swf_fet_sbc_as ( nf , w )
++ pd = swf_fet_sbc_ps ( nf , w )
++ ps = swf_fet_sbc_ps ( nf , w )
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp_sbc (nf)
++ psbcp = swf_psbcp_sbc (nf)
++ agbcp = swf_agbcp_sbc (nf)
++ agbcp2 = swf_agbcp_sbc (nf)
++ aebcp = swf_aebcp_sbc (nf)
+
+
+nmos_1p2v_lowvt_sbc (d g s b x) base_nmos_1p2v_lowvt_bodytie
++ swx_align_poly=0 nbc=0
++ l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nmos_1p2v_lowvt_sbc
+******************************************************************
+******************************************************************
+
+inline subckt nmos_1p2v_lowvt (d g s b)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.255u
++ swx_insidew_ds = 0.28u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
++ aebcp = swx_active_area - (as+ad)
+
+
+nmos_1p2v_lowvt (d g s b) ps_nsoi1_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps
++aebcp=aebcp
+
+ends nmos_1p2v_lowvt
+******************************************************************
+******************************************************************
+
+
+inline subckt nmos_1p2v_lowvt_tg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 1
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+ // Target adjustments
++ swx_vth0 = -0.095
++ swx_wvth0 = 1.3
++ swx_lvth0 = 1.4
++ swx_u0 = 1.05
++ swx_vsat = 1.05
++ swx_wint = -2e-8
++ swx_cg_tg = 0.816 // H-gate data extra H-bar overlap correction
+
+nmos_1p2v_lowvt_tg (d g s b x) base_nmos_1p2v_lowvt_tg
++ l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc
++ w=(w-sw_dvar_active-sw_dvar_polycd)*nf
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_nmos_lowvt
+
+model base_nmos_1p2v_lowvt_tg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 0 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 1 type = n
+//*** Geometry Range Parameter ***
++lmin = 5E-8 lmax = 4.1E-6 wmin = 2E-7
++wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 3E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1.5E18 nsub = 1E15
++ngate = 1E20 ados = 3.034 bdos = 0.6
+//*** Vth Related Parameter ***
++vth0 = 0.353 + swx_vth0
++lvth0 = 3.7E-3*swx_lvth0
++wvth0 = 3.13568E-2*(1+1e7*sw_align_poly)*swx_wvth0
++pvth0 = -2.3E-3 k1 = 0.2 k1w1 = 0
++k1w2 = 0 k2 = 0.2245 k3 = 76.9
++k3b = 434.4 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 1.581E-7 dvt0 = 2.2 ldvt0 = 0
++wdvt0 = 0.04 dvt1 = 0.6136 dvt2 = -0.032
++dvt0w = 0 dvt1w = 0 dvt2w = 0
++nlx = 1.74E-7
+//*** Mobility Related Parameter ***
++u0 = 187.282057 * sw_u0_nmos_lowvt * swx_u0
++lu0 = -4.275293 wu0 = 4.62
++pu0 = -0.2998 ua = 1E-10 ub = 2.5E-19
++eu = 1.67 vsat = 4.29536E5 *swx_vsat lvsat = -2.365248E4
++wvsat = 2.58825E3 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 77.4 * sw_rdsw_nmos_lowvt wrdsw = -7.92
++prwb = 0 prwg = 0
+//*** Subthreshold Related Parameter ***
++voff = -0.09 lvoff = -8.512E-3 wvoff = -8.337135E-3
++pvoff = 2.4342E-4 nfactor = 0.282395 lnfactor = 0.057
++eta0 = 0 leta0 = 1.875E-3 etab = 0
++dsub = 0.05 cit = 0 cdsc = 8.64E-3
++cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = 1E-8 ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 0 + swx_wint
++dwg = 0 dwb = 0
+//*** Output Resistance Related Parameter ***
++pclm = 1 lpclm = 0 wpclm = 0
++pdiblc1 = 0.021 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = -0.12 delta = 0.02
++cgidl = 2 egidl = 1 ntun = 10
++ndiode = 1 ndioded = 1 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8
++iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4
++istun = 1E-5 ln = 1E-11 vrec0 = 0.075
++vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7
++vabjt = 9.7 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = -0.3875*1.6 lminv = 0.025*0.9 wminv = -0.09
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.43 bigc = 0 cigc = 0.0273
++aigsd = 0.011528 bigsd = 7E-4 cigsd = 9.00909E-2
++nigc = 4 pigcd = 0.5 poxedge = 1
++dlcig = 8.6E-10 toxqm = 1.8E-9 ntox = 1.024
++toxref = 1.8E-9 ebg = 1.15 alphagb1 = 0.64
++betagb1 = 0 vgb1 = 200 vevb = 0.3
++alphagb2 = 1.0136 betagb2 = 0.06 vgb2 = 200
++vecb = 3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.2648E-10/swr_tox_lv*swx_cg_tg cgdo = 3.2648E-10/swr_tox_lv*swx_cg_tg
++cgeo = 2.3E-10/swr_tox_lv*swx_cg_tg
++cjswg = 1E-10/sw_rdsw_nmos_lowvt mjswg = 0.6
++vsdfb = -5 vsdth = -3 csdmin = 1E-4
++cgsl = 9.911719E-11/swr_tox_lv/sqrt(sw_rdsw_nmos_lowvt)*swx_cg_tg
++cgdl = 9.911719E-11/swr_tox_lv/sqrt(sw_rdsw_nmos_lowvt)*swx_cg_tg
++ckappa = 0.6 cf = 0 clc = 5E-7
++cle = 0.6 dlc = 3.92E-8 llc = 0
++dlbg = 0 dwc = 0 dwbc = 8E-8
++delvt = 3.39434E-2 ldelvt = -7.094297E-3 wdelvt = 0.01476
++fbody = 0 noff = 0.63 voffcv = -0.189504
++minvcv = 0.507402 lminvcv = 0.3
+//*** Temperature coefficient ***
++tnom = 27 ute = -1.26 kt1 = -0.1358
++kt1l = 3E-9 kt2 = 0.022 ua1 = 0
++ub1 = 0 uc1 = -5.6E-11 at = 0
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+ends nmos_1p2v_lowvt_tg
+******************************************************************
+******************************************************************
+// -----------------------------------------------------------
+
+inline subckt nmos_1p8v_sbc (d g s e p)
+
+parameters l=0.2u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical, instance parameters:
+parameters
++ as = swx_total_sarea * 0.5
++ ad = swx_total_darea * 0.5
++ pd = swx_total_dperim * 0.5
++ ps = swx_total_sperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.15e-6 * nf
++ psbcp = 0
++ agbcp = 0.15e-6 * 0.075e-6 * nf
++ agbcp2 = 0.15e-6 * 0.075e-6 * nf
++ aebcp = 4*0.15e-6*0.225e-6
+// + aebcp = swx_active_area - (as+ad)
+
+
+nmos_1p8v_sbc (d g s e p) nmos_1p8v_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+ends nthick_sbc
+
+// -----------------------------------------------------------
+
+inline subckt nmos_1p8v_tg (d g s e p)
+
+parameters l=0.2u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.5*(swx_total_sdperim-2*w)
++ psbcp = 0.5*(swx_total_sdperim-2*w)
++ agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
+// + aebcp = swx_active_area - (as+ad)
+
+nmos_1p8v_tg (d g s e p) nmos_1p8v_base l=l
++ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly
++ nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nthick_tg
+
+// -----------------------------------------------------------
+
+inline subckt nmos_1p8v_hg (d g s e p)
+
+parameters l=0.2u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = swx_total_sdperim-2*w
++ psbcp = swx_total_sdperim-2*w
++ agbcp = (swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
+// + aebcp = swx_active_area - (as+ad)
+
+
+nmos_1p8v_hg (d g s e p) nmos_1p8v_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nthick_hg
+
+
+// ===========================================================================
+
+inline subckt nmos_1p8v_base (d g s e p)
+
+parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp
+
+nmos_1p8v_base (d g s e p) nmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model nmosthick bsimsoi
+//*** Flag Parameter ***
++version = 4.5 soimod = 0 shmod = 1
++binunit = 1 paramchk = 0 mobmod = 4
++capmod = 3 rdsmod = 1 igcmod = 1
++igbmod = 1 rgatemod = 1 rbodymod = 0
++fnoimod = 1 tnoimod = 0 mtrlmod = 0
++vgstcvmod = 1 gidlmod = 0 iiimod = 0
++fdmod = 0 minr = 1E-60 type = n
+//*** Geometry Range Parameter ***
++lmin = 0.15u lmax = 0.4u wmin = 0
++wmax = 1
+//*** Process Parameter ***
++tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv
++dtoxcv = 0 xj = 3E-8
++nch = 5E17 nsub = 5E14 ngate = 1.4E20
++nsd = 5E20 eot = 6.2E-9 epsrox = 3.9
++vddeot = 1.5 leffeot = 1 weffeot = 10
++tempeot = 300.03 phig = 4.05 easub = 2.268
++epsrsub = 5.85 epsrgate = 6.669 ni0sub = 6.000014E15
++bg0sub = 0.833106 ados = 2.258187 bdos = 0.895351
++etsi = 3.06E-8
+//*** Vth Related Parameter ***
++vth0 = 0.669911 + sw_vth0_nthick k1 = 0.85065 k1w1 = 0
++k1w2 = 0 k2 = -0.0186 k3 = 0
++k3b = 0 kb1 = 1 w0 = 2.5E-6
++lpe0 = 1.319843E-8 lpeb = 0 dvt0 = 0
++dvt1 = 0.795 dvt2 = -0.032 dvt0w = 0
++dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1
++dvtp0 = 0 dvtp1 = 0 dvtp2 = 0
++dvtp3 = 0 dvtp4 = 0 vsce = 0
++cdsbs = 0
+//*** Mobility Related Parameter ***
++u0 = 1.50207E-2 * sw_u0_nthick ua = 2.25E-9 ub = 5.87E-19
++uc = -4.65E-11 ud = 0 eu = 1.67
++ucs = 1.67 vsat = 4.975669E4 lvsat = 3.936906E3
++a0 = 0.106174 la0 = 5.92427E-2 ags = -0.674281
++lags = 0.163408 b0 = 0 b1 = 0
++keta = -0.6 lketa = 0 ketas = 0
++a1 = 0 a2 = 1 rdsw = 168 * sw_rdsw_nthick
++rdw = 50 rdwmin = 0 rsw = 50
++rswmin = 0 prwb = 0 prwg = 0
++wr = 1
+//*** Subthreshold Related Parameter ***
++voff = 0 lvoff = -3.15587E-2 nfactor = 0.784
++eta0 = 0.09 leta0 = 0 etab = -0.07
++eta0cv = 0.08 etabcv = -0.07 dsub = 0.56
++cit = 3.62E-4 cdsc = 2.4E-4 cdscb = 0
++cdscd = 0
+//*** dW and dL Parameter ***
++lint = 0 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 0 wln = 1 ww = 0
++wwn = 1 wwl = 0 xw = 0
++xl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 2.924809 pdiblc1 = 1.95E-10 pdiblc2 = 4.3E-3
++pdiblcb = 0 drout = 0.6104 pvag = -0.590676
++delta = 8.3E-3 alpha0 = 0 fbjtii = 0
++beta0 = 0 beta1 = 0 beta2 = 0.1
++vdsatii0 = 0.9 tii = 0 lii = 0
++esatii = 1E7 sii0 = 0.5 sii1 = 0.1
++sii2 = 0 siid = 0 agidl = 0
++bgidl = 2.3E9 cgidl = 0.5 egidl = 1.2
++rgidl = 1 kgidl = 0 fgidl = 0
++agisl = 0 bgisl = 2.3E9 cgisl = 0
++egisl = 1.2 rgisl = 1 kgisl = 0
++fgisl = 0 ntun = 10 ntund = 10
++ndiode = 1 ndioded = 1 nrecf0 = 2
++nrecf0d = 2 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-6 idbjt = 1E-6 isdif = 0
++iddif = 0 isrec = 1E-5 idrec = 1E-5
++istun = 0 idtun = 0 ln = 2E-6
++vrec0 = 0 vrec0d = 0 vtun0 = 0
++vtun0d = 0 nbjt = 1 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 0
++ahlid = 0 rbody = 0 rbsh = 0
++rsh = 0 rhalo = 1E15 pdits = 1E-20
++pditsl = 0 pditsd = 0 fprout = 0
++minv = 1.23 frbody = 1 ebjtii = 0
++cbjtii = 0 vbci = 0 abjtii = 0
++mbjtii = 0.4
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.43 bigc = 0.054 cigc = 0.075
++aigsd = 0.43 bigsd = 0.054 cigsd = 0.075
++nigc = 1 pigcd = 1 poxedge = 1
++dlcig = 0 toxqm = 1E-8 ntox = 1
++toxref = 6.2E-9 ebg = 1.2 alphagb1 = 0.35
++betagb1 = 0.03 vgb1 = 300 vevb = 0.075
++alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17
++vecb = 0.026 voxh = 5 deltavox = 5E-3
++aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 5.767067E-11/swr_tox_hv cgdo = 5.767067E-11/swr_tox_hv
++cgeo = 2.834954E-11/swr_tox_hv cjswg = 1E-10/sqrt(sw_rdsw_nthick) mjswg = 0.6
++cgsl = 2.016123E-10/sqrt(sw_rdsw_nthick) cgdl = 2.016123E-10/sqrt(sw_rdsw_nthick) ckappa = 7.880675
++cf = 0 clc = 3.05E-7 cle = 0.6
++dlc = 2.124684E-8 llc = 0 dlbg = 1E-8
++dwc = 0 delvt = 0 fbody = 0.948281
++moin = 25 voffcv = 0
+//*** Temperature coefficient ***
++tnom = 27 ute = -2.278199 lute = -0.076915
++ucste = -4.775E-3 ud1 = 0 kt1 = -0.455906
++kt1l = -8.0494E-10 kt2 = 0.022 ua1 = 2.316625E-9
++ub1 = -7.61E-18 uc1 = -5.6E-11 at = 2.4E4
++lat = 0 tcjswg = 0 tpbswg = 0
++tcjswgd = 0 tpbswgd = 0 cth0 = 1E-5
++prt = 0.474662 rth0 = 0 ntrecf = 0
++ntrecr = 0 xbjt = 1 xdif = 1
++xrec = 1 xtun = 0 xdifd = 1
++xrecd = 1 xtund = 0 wth0 = 0
++tvbci = 0 tbgasub = 7.02E-4 tbgbsub = 1.108E3
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 1 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.25
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
++rbsb = 50 rbdb = 50 gbmin = 1E-12
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Stress Effect Related Parameter ***
++saref = 1E-6 sbref = 1E-6 wlod = 0
++ku0 = 0 kvsat = 0 kvth0 = 0
++tku0 = 0 llodku0 = 0 wlodku0 = 0
++llodvth = 0 wlodvth = 0 stk2 = 0
++lodk2 = 1 steta0 = 0 lodeta0 = 1
++steta0cv = 0 lodeta0cv = 1
+//***Material Properties***
++eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7
++bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10
++agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12
++bgbc2p = 7.4567E11 vtm00 = 0.026
+
+
+ends nmosthick
+******************************************************************
+******************************************************************
+// -----------------------------------------------------------
+
+inline subckt nmos_3p3v_sbc (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical, instance parameters:
+parameters
++ as = swx_total_sarea * 0.5
++ ad = swx_total_darea * 0.5
++ pd = swx_total_dperim * 0.5
++ ps = swx_total_sperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.15e-6 * nf
++ psbcp = 0
++ agbcp = 0.15e-6 * 0.075e-6 * nf
++ agbcp2 = 0.15e-6 * 0.075e-6 * nf
++ aebcp = 4*0.15e-6*0.225e-6
+// + aebcp = swx_active_area - (as+ad)
+
+
+nmos_3p3v_sbc (d g s e p) nthick_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+ends nthick_sbc
+
+// -----------------------------------------------------------
+
+inline subckt nmos_3p3v_tg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.5*(swx_total_sdperim-2*w)
++ psbcp = 0.5*(swx_total_sdperim-2*w)
++ agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
+// + aebcp = swx_active_area - (as+ad)
+
+nmos_3p3v_tg (d g s e p) nthick_base l=l
++ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly
++ nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nthick_tg
+
+// -----------------------------------------------------------
+
+inline subckt nmos_3p3v_hg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = swx_total_sdperim-2*w
++ psbcp = swx_total_sdperim-2*w
++ agbcp = (swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
+// + aebcp = swx_active_area - (as+ad)
+
+
+nmos_3p3v_hg (d g s e p) nthick_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends nthick_hg
+
+
+// ===========================================================================
+
+inline subckt nthick_base (d g s e p)
+
+parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp
+
+nthick_base (d g s e p) nmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+model nmosthick bsimsoi
+//*** Flag Parameter ***
++version = 4.5 soimod = 0 shmod = 1
++binunit = 1 paramchk = 0 mobmod = 4
++capmod = 3 rdsmod = 0 igcmod = 1
++igbmod = 1 rgatemod = 1 rbodymod = 0
++fnoimod = 1 tnoimod = 0 mtrlmod = 0
++vgstcvmod = 1 gidlmod = 0 iiimod = 0
++fdmod = 0 minr = 1E-60 type = n
+//*** Geometry Range Parameter ***
++lmin = 0 lmax = 5.1 wmin = 0
++wmax = 1
+//*** Process Parameter ***
++tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv
++ dtoxcv = 0 xj = 3E-8
++nch = 5E17 nsub = 5E14 ngate = 1.4E20
++nsd = 5E20 eot = 6.2E-9 epsrox = 3.9
++vddeot = 1.5 leffeot = 1 weffeot = 10
++tempeot = 300.03 phig = 4.05 easub = 2.268
++epsrsub = 5.85 epsrgate = 6.669 ni0sub = 6.000014E15
++bg0sub = 0.833106 ados = 2.258187 bdos = 0.895351
++etsi = 3.06E-8
+//*** Vth Related Parameter ***
++vth0 = 0.707 + sw_vth0_nthick k1 = 0.795 k1w1 = 0
++k1w2 = 0 k2 = -0.0186 k3 = 0
++k3b = 0 kb1 = 1 w0 = 2.5E-6
++lpe0 = 9.7E-9 lpeb = 0 dvt0 = 2.266
++dvt1 = 0.795 dvt2 = -0.032 dvt0w = 0
++dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1
++dvtp0 = 0 dvtp1 = 0 dvtp2 = 0
++dvtp3 = 0 dvtp4 = 0 vsce = 0
++cdsbs = 0
+//*** Mobility Related Parameter ***
++u0 = 1.59795E-2*sw_u0_nthick ua = 2.25E-9 ub = 5.87E-19
++uc = -4.65E-11 ud = 0 eu = 1.67
++ucs = 1.67 vsat = 1.099198E5 lvsat = -1.017526E4
++a0 = 0.106174 la0 = 5.92427E-2 ags = -0.674281
++lags = 0.163408 b0 = 0 b1 = 0
++keta = -0.6 lketa = 0 ketas = 0
++a1 = 0 a2 = 1 rdsw = 112 * sw_rdsw_nthick
++rdw = 50 rdwmin = 0 rsw = 50
++rswmin = 0 prwb = 0 prwg = 0
++wr = 1
+//*** Subthreshold Related Parameter ***
++voff = 0 lvoff = -3.15587E-2 nfactor = 1.12
++eta0 = 1E-3 etab = -0.07 eta0cv = 0.08
++etabcv = -0.07 dsub = 0.56 cit = 3.62E-4
++cdsc = 2.4E-4 cdscb = 0 cdscd = 0
+//*** dW and dL Parameter ***
++lint = 0 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 0 wln = 1 ww = 0
++wwn = 1 wwl = 0 xw = 0
++xl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 2.924809 pdiblc1 = 1.95E-10 pdiblc2 = 4.3E-3
++pdiblcb = 0 drout = 0.6104 pvag = -0.590676
++delta = 8.3E-3 alpha0 = 0 fbjtii = 0
++beta0 = 0 beta1 = 0 beta2 = 0.1
++vdsatii0 = 0.9 tii = 0 lii = 0
++esatii = 1E7 sii0 = 0.5 sii1 = 0.1
++sii2 = 0 siid = 0 agidl = 0
++bgidl = 2.3E9 cgidl = 0.5 egidl = 1.2
++rgidl = 1 kgidl = 0 fgidl = 0
++agisl = 0 bgisl = 2.3E9 cgisl = 0
++egisl = 1.2 rgisl = 1 kgisl = 0
++fgisl = 0 ntun = 10 ntund = 10
++ndiode = 1 ndioded = 1 nrecf0 = 2
++nrecf0d = 2 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-6 idbjt = 1E-6 isdif = 0
++iddif = 0 isrec = 1E-5 idrec = 1E-5
++istun = 0 idtun = 0 ln = 2E-6
++vrec0 = 0 vrec0d = 0 vtun0 = 0
++vtun0d = 0 nbjt = 1 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 0
++ahlid = 0 rbody = 1000 rbsh = 0
++rsh = 0 rhalo = 1E15 pdits = 1E-20
++pditsl = 0 pditsd = 0 fprout = 0
++minv = 0 frbody = 1 ebjtii = 0
++cbjtii = 0 vbci = 0 abjtii = 0
++mbjtii = 0.4
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.43 bigc = 0.054 cigc = 0.075
++aigsd = 0.43 bigsd = 0.054 cigsd = 0.075
++nigc = 1 pigcd = 1 poxedge = 1
++dlcig = 0 toxqm = 1E-8 ntox = 1
++toxref = 6.2E-9 ebg = 1.2 alphagb1 = 0.35
++betagb1 = 0.03 vgb1 = 300 vevb = 0.075
++alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17
++vecb = 0.026 voxh = 5 deltavox = 5E-3
++aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 5.767067E-11/swr_tox_hv cgdo = 5.767067E-11/swr_tox_hv
++cgeo = 2.834954E-11/swr_tox_hv cjswg = 1E-10/sqrt(sw_rdsw_nthick) mjswg = 0.6
++cgsl = 2.016123E-10/sqrt(sw_rdsw_nthick) cgdl = 2.016123E-10/sqrt(sw_rdsw_nthick) ckappa = 7.880675
++cf = 0 clc = 3.05E-7 cle = 0.6
++dlc = 2.124684E-8 llc = 0 dlbg = 1E-8
++dwc = 0 delvt = 0 fbody = 0.948281
++moin = 25 voffcv = 0
+//*** Temperature coefficient ***
++tnom = 27 ute = -2.15594 lute = 0
++ucste = -4.775E-3 ud1 = 0 kt1 = -5.72707E-2
++kt1l = -8.554249E-8 kt2 = 0.022 ua1 = 2.155E-9
++ub1 = -7.61E-18 uc1 = -5.6E-11 at = 32.04948
++tcjswg = 0 tpbswg = 0 tcjswgd = 0
++tpbswgd = 0 cth0 = 1E-5 prt = 0.474662
++rth0 = 0 ntrecf = 0 ntrecr = 0
++xbjt = 1 xdif = 1 xrec = 1
++xtun = 0 xdifd = 1 xrecd = 1
++xtund = 0 wth0 = 0 tvbci = 0
++tbgasub = 7.02E-4 tbgbsub = 1.108E3
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 1 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.25
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
++rbsb = 50 rbdb = 50 gbmin = 1E-12
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Stress Effect Related Parameter ***
++saref = 1E-6 sbref = 1E-6 wlod = 0
++ku0 = 0 kvsat = 0 kvth0 = 0
++tku0 = 0 llodku0 = 0 wlodku0 = 0
++llodvth = 0 wlodvth = 0 stk2 = 0
++lodk2 = 1 steta0 = 0 lodeta0 = 1
++steta0cv = 0 lodeta0cv = 1
+//***Material Properties***
++eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7
++bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10
++agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12
++bgbc2p = 7.4567E11 vtm00 = 0.026
+
+
+ends nmosthick
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_highvt_hg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 2
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+pmos_1p2v_highvt_hg (d g s b x) base_pmos_1p2v_highvt_hg
++ nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc
++ l=l w=(w-2*sw_dvar_polycd) * nf
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_pmos_highvt - 0.05
+
+model base_pmos_1p2v_highvt_hg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 type = p
+//*** Geometry Range Parameter ***
++lmax = 5.1E-6 wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+//*** Vth Related Parameter ***
++vth0 = -0.62 k1 = 0.5644 k1w1 = -2E-8
++k1w2 = 0 k2 = 0 k3 = -1.84
++k3b = 0 kb1 = 0 w0 = 1E-9
++lpe0 = -1.29E-8 lpeb = -2E-8 dvt0 = 0.64
++dvt1 = 0.21186 dvt2 = 0.391 dvt0w = -0.24
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 1E-8
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+//*** Mobility Related Parameter ***
++u0 = 25 * (sw_u0_pmos_highvt**0.8) ua = 0 ub = 0
++uc = -7.4E-10 vsat = 1E6 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 1 rdsw = 60 *sw_rdsw_pmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+//*** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 3.2155 eta0 = 0.074
++etab = -0.07 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = -8E-9 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 3E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 0.675 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 1E-12 bgidl = 9E8
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 6.155E-4 idbjt = 7E-5 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 0
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 8.8E-3 bigsd = 7E-4 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++toxqm = sw_tox_lv ntox = 4.5 toxref = 1.8e-9
++ebg = 1.2 alphagb1 = 0.74 betagb1 = 0.03
++vgb1 = 300 vevb = 0.075 alphagb2 = 0.43
++betagb2 = 0.05 vgb2 = 17 vecb = 0.026
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 5.0e-10/swr_tox_lv cjswg = 8.6E-11/sw_rdsw_pmos_lowvt mjswg = 0.5
++vsdfb = -4 vsdth = -2 csdmin = 1E-4
++cgsl = 3E-10/swr_tox_lv cgdl = 3E-10/swr_tox_lv ckappa = 0.95
++cf = 0 clc = 1E-8 cle = 0
++dlc = -3.98159E-8
+// +llc = 1.209E-16 lwc = 0
+//+lwlc = 0 dlbg = 0
++ dwc = -7.8E-8
++delvt = -0.028 fbody = 0 acde = 1
++moin = 500 noff = 1.23 voffcv = -0.5
++minvcv = 0.3 lminvcv = -0.054 wminvcv = 0.3
+//*** Temperature coefficient ***
++tnom = 27 ute = -0.6396 ucste = -9.2E-3
++ud1 = 0 kt1 = -0.2755 kt1l = 2.2E-9
++kt2 = -0.3 ua1 = 0 ub1 = 0
++uc1 = 0 at = 3.4E4 tcjswg = 0
++cth0 = 0 prt = 0 rth0 = 0.2
++ntrecf = 0 ntrecr = 0 xbjt = 1.15
++xdif = 1.11 xrec = 0.9 xtun = 0
++xrecd = 1 wth0 = 4E-6
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+//*** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+//*** Unknown Parameters ***
++gatetype = non_h dskip = yes
+
+
+ends pmos_1p2v_highvt_hg
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_highvt_sbc (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_sbc_as ( nf , w )
++ ad = swf_fet_sbc_as ( nf , w )
++ pd = swf_fet_sbc_ps ( nf , w )
++ ps = swf_fet_sbc_ps ( nf , w )
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp_sbc (nf)
++ psbcp = swf_psbcp_sbc (nf)
++ agbcp = swf_agbcp_sbc (nf)
++ agbcp2 = swf_agbcp_sbc (nf)
++ aebcp = swf_aebcp_sbc (nf)
+
+
+pmos_1p2v_highvt_sbc (d g s b x) base_pmos_1p2v_highvt_bodytie
++ swx_align_poly = 0 nbc=0
++ l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p2v_highvt_sbc
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_highvt (d g s b)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.255u
++ swx_insidew_ds = 0.28u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+
+
+pmos_1p2v_highvt (d g s b) ps_psoi2_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps
+
+ends pmos_1p2v_highvt
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_highvt_tg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 1
++ swx_align_poly = sw_align_poly
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+pmos_1p2v_highvt_tg (d g s b x) base_pmos_1p2v_highvt_tg l=l nf=nf ad=ad as=as pd=pd ps=ps
++ w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf nbc=nbc
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_pmos_highvt - 0.05
+
+model base_pmos_1p2v_highvt_tg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 type = p
+//*** Geometry Range Parameter ***
++lmax = 5.1E-6 wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+//*** Vth Related Parameter ***
++vth0 = -0.62 k1 = 0.5644 k1w1 = -2E-8
++k1w2 = 0 k2 = 0 k3 = -1.84
++k3b = 0 kb1 = 0 w0 = 1E-9
++lpe0 = -1.29E-8 lpeb = -2E-8 dvt0 = 0.64
++dvt1 = 0.21186 dvt2 = 0.391 dvt0w = -0.24
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 1E-8
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+//*** Mobility Related Parameter ***
++u0 = 25 * (sw_u0_pmos_highvt**0.8) ua = 0 ub = 0
++uc = -7.4E-10 vsat = 1E6 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 1 rdsw = 60 *sw_rdsw_pmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+//*** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 3.2155 eta0 = 0.074
++etab = -0.07 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = -8E-9 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 3E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 0.675 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 1E-12 bgidl = 9E8
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 6.155E-4 idbjt = 7E-5 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 0
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 8.8E-3 bigsd = 7E-4 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++toxqm = sw_tox_lv ntox = 4.5 toxref = 1.8e-9
++ebg = 1.2 alphagb1 = 0.74 betagb1 = 0.03
++vgb1 = 300 vevb = 0.075 alphagb2 = 0.43
++betagb2 = 0.05 vgb2 = 17 vecb = 0.026
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 5.0e-10/swr_tox_lv cjswg = 8.6E-11/sw_rdsw_pmos_lowvt mjswg = 0.5
++vsdfb = -4 vsdth = -2 csdmin = 1E-4
++cgsl = 3E-10/swr_tox_lv cgdl = 3E-10/swr_tox_lv ckappa = 0.95
++cf = 0 clc = 1E-8 cle = 0
++dlc = -3.98159E-8
+// +llc = 1.209E-16 lwc = 0
+//+lwlc = 0 dlbg = 0
++ dwc = -7.8E-8
++delvt = -0.028 fbody = 0 acde = 1
++moin = 500 noff = 1.23 voffcv = -0.5
++minvcv = 0.3 lminvcv = -0.054 wminvcv = 0.3
+//*** Temperature coefficient ***
++tnom = 27 ute = -0.6396 ucste = -9.2E-3
++ud1 = 0 kt1 = -0.2755 kt1l = 2.2E-9
++kt2 = -0.3 ua1 = 0 ub1 = 0
++uc1 = 0 at = 3.4E4 tcjswg = 0
++cth0 = 0 prt = 0 rth0 = 0.2
++ntrecf = 0 ntrecr = 0 xbjt = 1.15
++xdif = 1.11 xrec = 0.9 xtun = 0
++xrecd = 1 wth0 = 4E-6
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+//*** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+//*** Unknown Parameters ***
++gatetype = non_h dskip = yes
+
+
+ends pmos_1p2v_highvt_hg
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_lowvt_hg (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 2
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+
+
+pmos_1p2v_lowvt_hg (d g s b x) base_pmos_1p2v_lowvt_bodytie
++ swx_align_poly=0 nbc=nbc
++ l=l w=(w-2*sw_dvar_polycd) nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p2v_lowvt_hg
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_lowvt_sbc (d g s b x)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_sbc_as ( nf , w )
++ ad = swf_fet_sbc_as ( nf , w )
++ pd = swf_fet_sbc_ps ( nf , w )
++ ps = swf_fet_sbc_ps ( nf , w )
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp_sbc (nf)
++ psbcp = swf_psbcp_sbc (nf)
++ agbcp = swf_agbcp_sbc (nf)
++ agbcp2 = swf_agbcp_sbc (nf)
++ aebcp = swf_aebcp_sbc (nf)
+
+
+pmos_1p2v_lowvt_sbc (d g s b x) base_pmos_1p2v_lowvt_bodytie
++ swx_align_poly=0 nbc=0
++ l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p2v_lowvt_sbc
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_lowvt (d g s b)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.255u
++ swx_insidew_ds = 0.28u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
++ aebcp = swx_active_area - (as+ad)
+
+
+pmos_1p2v_lowvt (d g s b) ps_psoi1_lls l=l w=nf*(w-2*sw_dvar_active) nf=nf ad=ad as=as pd=pd ps=ps
++aebcp=aebcp
+
+ends pmos_1p2v_lowvt
+******************************************************************
+******************************************************************
+
+inline subckt pmos_1p2v_lowvt_tg (d g s e p)
+
+parameters l=0.1u w=0.5u nf=1
+ // Internal parameters, as, ad, pd, ps will change if netlist as w=nf*w(each finger)
+parameters
++ as = swf_fet_as (nf, w)
++ ad = swf_fet_as (nf, w)
++ pd = swf_fet_ps (nf, w)
++ ps = swf_fet_ps (nf, w)
++ nbc = 1
+ // gate extra gate capacitance
+parameters
++ pdbcp = swf_psbcp (nf, nbc)
++ psbcp = swf_psbcp (nf, nbc)
++ agbcp = swf_agbcp (nf, l, nbc)
++ agbcp2 = swf_agbcp (nf, l, nbc)
++ aebcp = swf_aebcp (nf, l, nbc)
+ // Refitting adjustment then target adjustments
++ swx_vth0 = -0.103
++ swx_lvth0 = 1.05
++ swx_wvth0 = -0.55
++ swx_u0 = 0.85
++ swx_lu0 = -3
++ swx_vsat = 0.8
++ swx_lvsat = 500
++ swx_wvsat = 2000
++ swx_cg_tg = 0.9
+
+
+pmos_1p2v_lowvt_tg (d g s e p) base_pmos_1p2v_lowvt_tg
++ l=l nf=nf ad=ad as=as pd=pd ps=ps nbc=nbc
++ w=(w-sw_dvar_active-sw_dvar_polycd-sw_align_poly) * nf
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
++ delvto = sw_vth0_pmos_lowvt
+
+model base_pmos_1p2v_lowvt_tg bsimsoi
+//*** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 type = p
+//*** Geometry Range Parameter ***
++lmax = 4E-7 wmax = 5.1E-6
+//*** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+//*** Vth Related Parameter ***
++vth0 = -0.245+swx_vth0 lvth0 = -0.014*swx_lvth0 wvth0 = 0.015*swx_wvth0
++k1 = 0.01 k1w1 = 0 k1w2 = 0
++k2 = -0.12 k3 = -5.42 k3b = 0
++kb1 = 0 w0 = 0 lpe0 = -1E-8
++lpeb = 0 dvt0 = 1.145 dvt1 = 0.21684
++dvt2 = 0 dvt0w = 0.056 dvt1w = 1.5E5
++dvt2w = 0 dvtp0 = 0 dvtp1 = 0
++dvtp2 = 0 dvtp3 = 0 dvtp4 = 0
++cdsbs = 1E-3
+//*** Mobility Related Parameter ***
++u0 = 89.7*sw_u0_pmos_lowvt*swx_u0
++lu0 = -1.4*swx_lu0
++wu0 = -4
++pu0 = 0 ua = 0 ub = 0
++uc = 0
++vsat = 7.2E4*swx_vsat
++lvsat = swx_lvsat
++wvsat = swx_wvsat
++a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 300*sw_rdsw_pmos_lowvt prwb = 0
++prwg = 0 wr = 0.85
+//*** Subthreshold Related Parameter ***
++voff = -0.042048 nfactor = 0.2304 eta0 = 0.0276
++etab = -1E-3 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+//*** dW and dL Parameter ***
++lint = -2.743E-8 ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -5.08E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 1.35 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 2E-12 bgidl = 1E9
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 1.5
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 1.8E-3 bigsd = 0 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++toxqm = 10e-9*swr_tox_lv ntox = 4.5 toxref = 1.8E-9
++ebg = 1.2 alphagb1 = 0.74 betagb1 = 0.03
++vgb1 = 300 vevb = 0.075 alphagb2 = 0.43
++betagb2 = 0.05 vgb2 = 17 vecb = 0.026
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 2.67976E-10/swr_tox_lv*swx_cg_tg cgdo = 2.67976E-10/swr_tox_lv*swx_cg_tg
++cgeo = 2.3e-10/swr_tox_lv*swx_cg_tg cjswg = 1.112401E-10/sw_rdsw_pmos_lowvt mjswg = 0.3
++vsdfb = -4 vsdth = -2 csdmin = 1E-4
++cgsl = 2.74302E-10/swr_tox_lv/sqrt(sw_rdsw_pmos_lowvt)*swx_cg_tg
++cgdl = 2.74302E-10/swr_tox_lv/sqrt(sw_rdsw_pmos_lowvt)*swx_cg_tg ckappa = 0.1
++cf = 0 clc = 1E-8 cle = 0
++dlc = -2.654244E-8 llc = 0 lwc = 0
++lwlc = 0 dlbg = 0 dwc = 2.814178E-8
++wlc = 0 wwc = 0 wwlc = 0
++delvt = -6.54447E-2 ldelvt = 0.03 fbody = 0
++acde = 1 moin = 500 cfrcoeff = 1
++noff = 1 voffcv = -0.5 minvcv = 0.51
++wminvcv = 4.96175
+//*** Temperature coefficient ***
++tnom = 22 ute = -1.095 kt1 = -2.41893E-2
++kt1l = -1.345103E-8 kt2 = -0.15 ua1 = 0
++ub1 = 0 uc1 = 0 at = 3.4E4
++tcjswg = 0 cth0 = 1E-6 prt = 0
++rth0 = 0.2 ntrecf = 0 ntrecr = 0
++xbjt = 1.15 xdif = 1.11 xrec = 0.9
++xtun = 0 wth0 = 4E-6
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+//*** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+ends pmos_1p2v_lowvt_tg
+******************************************************************
+******************************************************************
+
+// -----------------------------------------------------------
+
+inline subckt pmos_1p8v_sbc (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical, instance parameters:
+parameters
++ as = swx_total_sarea * 0.5
++ ad = swx_total_darea * 0.5
++ pd = swx_total_dperim * 0.5
++ ps = swx_total_sperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.15e-6 * nf
++ psbcp = 0
++ agbcp = 0.15e-6 * 0.075e-6 * nf
++ agbcp2 = 0.15e-6 * 0.075e-6 * nf
++ aebcp = 4*0.15e-6*0.225e-6
+// + aebcp = swx_active_area - (as+ad)
+
+
+pmos_1p8v_sbc (d g s e p) pmos_1p8v_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p8v_sbc
+
+// -----------------------------------------------------------
+
+inline subckt pmos_1p8v_tg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.5*(swx_total_sdperim-2*w)
++ psbcp = 0.5*(swx_total_sdperim-2*w)
++ agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
+//+ aebcp = swx_active_area - (as+ad)
+
+
+pmos_1p8v_tg (d g s e p) pmos_1p8v_base l=l
++ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly
++ nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p8v_tg
+
+// -----------------------------------------------------------
+
+inline subckt pmos_1p8v_hg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
++ pdbcp = swx_total_sdperim-2*w
++ psbcp = swx_total_sdperim-2*w
++ agbcp = (swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
+//+ aebcp = swx_active_area - (as+ad)
+
+
+pmos_1p8v_hg (d g s e p) pmos_1p8v_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_1p8v_hg
+
+
+// ===========================================================================
+
+inline subckt pmos_1p8v_base (d g s e p)
+
+parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp
+
+pmos_1p8v_base (d g s e p) pmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+model pmosthick bsimsoi
+//*** Flag Parameter ***
++version = 4.5 soimod = 0 shmod = 1
++binunit = 1 paramchk = 0 mobmod = 1
++capmod = 3 rdsmod = 1 igcmod = 1
++igbmod = 1 rgatemod = 1 rbodymod = 1
++fnoimod = 1 tnoimod = 0 mtrlmod = 0
++vgstcvmod = 1 gidlmod = 0 iiimod = 0
++fdmod = 0 minr = 1E-60 type = p
+//*** Geometry Range Parameter ***
++lmin = 0.15u lmax = 0.4u wmin = 0.4u
++wmax = 1
+//*** Process Parameter ***
++tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv
++dtoxcv = -3.111883E-9 xj = 3E-8 nch = 8E17
++nsub = 5E14 ngate = 3.8E19 nsd = 2E20
++ados = 1.332 bdos = 0.86892
+//*** Vth Related Parameter ***
++vth0 = -0.466054 + sw_vth0_pthick k1 = 0.388186 k1w1 = 0
++k1w2 = 0 k2 = -5.88086E-2 k3 = 0
++k3b = 0 kb1 = 1 w0 = 2.5E-6
++lpe0 = 2.08067E-7 lpeb = 0 dvt0 = 2.2
++dvt1 = 0.53 dvt2 = -0.032 dvt0w = 0
++dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1
++dvtp0 = 0 dvtp1 = 0 dvtp2 = 0
++dvtp3 = 0 dvtp4 = 0 vsce = 0
++cdsbs = 0
+//*** Mobility Related Parameter ***
++u0 = 4.7311E-3 * sw_u0_pthick ua = 0 ub = 1.276725E-19
++uc = -2.325E-11 ud = 0 eu = 1
++ucs = 1 vsat = 1.48766E4 lvsat = 1.673617E3
++a0 = 0.105474 la0 = 7.09237E-2 ags = 3.0958
++lags = 0.999946 b0 = 0 b1 = 5.634546E-8
++keta = -0.6 ketas = 0 a1 = 0
++a2 = 1 rdsw = 420.5 * sw_rdsw_pthick rdw = 50
++rdwmin = 0 rsw = 50 rswmin = 0
++prwb = 0 prwg = -3E-5 wr = 1
+//*** Subthreshold Related Parameter ***
++voff = 0 nfactor = 0.375 eta0 = 0.169852
++leta0 = 2.21911E-2 etab = -0.07 eta0cv = 0.08
++etabcv = -0.07 dsub = 0.825467 ldsub = 0
++cit = 9.782955E-4 cdsc = 2.4E-4 cdscb = 0
++cdscd = 0
+//*** dW and dL Parameter ***
++lint = 0 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 0 wln = 1 ww = 0
++wwn = 1 wwl = 0 xw = 0
++xl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 2.501523 pdiblc1 = 3.84369E-2 pdiblc2 = 1.000168E-5
++pdiblcb = 0 drout = 4.316444 ldrout = 0
++pvag = 4.83206E-2 delta = 0.025 alpha0 = 0
++fbjtii = 0 beta0 = 0 beta1 = 0
++beta2 = 0.1 vdsatii0 = 0.9 tii = 0
++lii = 0 esatii = 1E7 sii0 = 0.5
++sii1 = 0.1 sii2 = 0 siid = 0
++agidl = 0 bgidl = 2.3E9 cgidl = 0.5
++egidl = 1.2 rgidl = 1 kgidl = 0
++fgidl = 0 agisl = 0 bgisl = 2.3E9
++cgisl = 0 egisl = 1.2 rgisl = 1
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 1E3 rbsh = 100 rhalo = 1E15
++minv = 1.02
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.31 bigc = 0.024 cigc = 0.03
++aigsd = 0.31 bigsd = 0.024 cigsd = 0.03
++nigc = 1 pigcd = 1 poxedge = 1
++dlcig = 0 toxqm = 1E-8 ntox = 1
++toxref = 2.5E-9 ebg = 1.2 alphagb1 = 0.35
++betagb1 = 0.03 vgb1 = 300 vevb = 0.075
++alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17
++vecb = 0.026 voxh = 5 deltavox = 5E-3
++aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 2.659147E-10/swr_tox_hv cgdo = 2.659147E-10/swr_tox_hv
++cgeo = 3E-10/swr_tox_hv cjswg = 1E-10 mjswg = 0.5
++cgsl = 7.792173E-11/sqrt(sw_rdsw_nthick) cgdl = 7.792173E-11/sqrt(sw_rdsw_nthick) ckappa = 0.24
++cf = 0 clc = 1E-8 cle = 0
++dlc = -1.469717E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0.39
++acde = 0.5 voffcv = -0.5
+//*** Temperature coefficient ***
++tnom = 27 ute = -1.283217 ucste = -4.775E-3
++ud1 = 0 kt1 = -7.39318E-2 kt1l = -4.44052E-8
++kt2 = 0 ua1 = 3.000582E-9 ub1 = -3.824957E-18
++uc1 = -5.6E-11 at = 2.93335E4 tcjswg = 0
++tpbswg = 0 tcjswgd = 0 tpbswgd = 0
++cth0 = 1E-5 prt = 0 rth0 = 0
++ntrecf = 0 ntrecr = 0 xbjt = 0.7
++xdif = 1 xrec = 1 xtun = 0
++xdifd = 1 xrecd = 1 xtund = 0
++wth0 = 0 tvbci = 0 tbgasub = 7.02E-4
++tbgbsub = 1.108E3
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
++rbsb = 50 rbdb = 50 gbmin = 1E-12
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Stress Effect Related Parameter ***
++saref = 1E-6 sbref = 1E-6 wlod = 0
++ku0 = 0 kvsat = 0 kvth0 = 0
++tku0 = 0 llodku0 = 0 wlodku0 = 0
++llodvth = 0 wlodvth = 0 stk2 = 0
++lodk2 = 1 steta0 = 0 lodeta0 = 1
++steta0cv = 0 lodeta0cv = 1
+//***Material Properties***
++eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7
++bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10
++agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12
++bgbc2p = 7.4567E11 vtm00 = 0.026
+
+
+
+ends pmos_1p8v_base
+******************************************************************
+******************************************************************
+
+// -----------------------------------------------------------
+
+inline subckt pmos_3p3v_sbc (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_darea = (w+0.3u) * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_total_dperim = (w+0.3u)*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.3u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical, instance parameters:
+parameters
++ as = swx_total_sarea * 0.5
++ ad = swx_total_darea * 0.5
++ pd = swx_total_dperim * 0.5
++ ps = swx_total_sperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.15e-6 * nf
++ psbcp = 0
++ agbcp = 0.15e-6 * 0.075e-6 * nf
++ agbcp2 = 0.15e-6 * 0.075e-6 * nf
++ aebcp = 4*0.15e-6*0.225e-6
+// + aebcp = swx_active_area - (as+ad)
+
+
+pmos_3p3v_sbc (d g s e p) pthick_base l=l w=w nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_3p3v_sbc
+
+// -----------------------------------------------------------
+
+inline subckt pmos_3p3v_tg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.375u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = 0.5*(swx_total_sdperim-2*w)
++ psbcp = 0.5*(swx_total_sdperim-2*w)
++ agbcp = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = 0.5*(swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 0.225u * ( nf*0.25u + nf*l + 0.2u )
+//+ aebcp = swx_active_area - (as+ad)
+
+
+pmos_3p3v_tg (d g s e p) pthick_base l=l
++ w=w-sw_dvar_active-sw_dvar_polycd-sw_align_poly
++ nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_3p3v_tg
+
+// -----------------------------------------------------------
+
+inline subckt pmos_3p3v_hg (d g s e p)
+
+parameters l=0.5u w=1u nf=1
+ // Internal parameters
+parameters
++ swx_outsidew_ds = 0.23u
++ swx_insidew_ds = 0.25u
++ swx_total_sdarea = w * ( 2*swx_outsidew_ds + (nf-1)*swx_insidew_ds )
++ swx_total_sdperim = w*2 + 4*swx_outsidew_ds + 2*(nf-1)*swx_insidew_ds
++ swx_active_area = (w+0.75u) * ( nf*0.25u + nf*l + 0.2u )
+ // Taking average since S/D are symmetrical
+parameters
++ as = swx_total_sdarea * 0.5
++ ad = swx_total_sdarea * 0.5
++ pd = swx_total_sdperim * 0.5
++ ps = swx_total_sdperim * 0.5
+ // H-gate extra gate capacitance
+parameters
++ pdbcp = swx_total_sdperim-2*w
++ psbcp = swx_total_sdperim-2*w
++ agbcp = (swx_total_sdperim-2*w ) * 0.075e-6
++ agbcp2 = (swx_total_sdperim-2*w ) * 0.075e-6
++ aebcp = nf*l*w + 2 * 0.225u * ( nf*0.25u + nf*l + 0.2u )
+//+ aebcp = swx_active_area - (as+ad)
+
+
+pmos_3p3v_hg (d g s e p) pthick_base l=l w=w-2*sw_dvar_polycd nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+
+ends pmos_3p3v_hg
+
+
+// ===========================================================================
+
+inline subckt pthick_base (d g s e p)
+
+parameters l w nf as ad ps pd pdbcp psbcp agbcp agbcp2 aebcp
+
+pthick_base (d g s e p) pmosthick w=nf*w l=l nf=nf ad=ad as=as pd=pd ps=ps
++ pdbcp=pdbcp psbcp=psbcp agbcp=agbcp agbcp2=agbcp2 aebcp=aebcp
+
+model pmosthick bsimsoi
+//*** Flag Parameter ***
++version = 4.5 soimod = 0 shmod = 1
++binunit = 1 paramchk = 0 mobmod = 1
++capmod = 3 rdsmod = 1 igcmod = 1
++igbmod = 1 rgatemod = 1 rbodymod = 1
++fnoimod = 1 tnoimod = 0 mtrlmod = 0
++vgstcvmod = 1 gidlmod = 0 iiimod = 0
++fdmod = 0 minr = 1E-60 type = p
+//*** Geometry Range Parameter ***
++lmin = 0 lmax = 1 wmin = 0
++wmax = 1
+//*** Process Parameter ***
++tsi = 3.06E-8 tbox = 1.4E-7 tox = sw_tox_hv
++dtoxcv = -3.111883E-9 xj = 3E-8 nch = 8E17
++nsub = 5E14 ngate = 3.8E19 nsd = 2E20
++ados = 1.332 bdos = 0.86892
+//*** Vth Related Parameter ***
++vth0 = -0.512 + sw_vth0_pthick k1 = 0.23116 k1w1 = 0
++k1w2 = 0 k2 = -0.04185 k3 = 0
++k3b = 0 kb1 = 1 w0 = 2.5E-6
++lpe0 = 4.161339E-7 lpeb = 0 dvt0 = 2.2
++dvt1 = 0.53 dvt2 = -0.032 dvt0w = 0
++dvt1w = 5.3E6 dvt2w = -0.032 vfb = -1
++dvtp0 = 0 dvtp1 = 0 dvtp2 = 0
++dvtp3 = 0 dvtp4 = 0 vsce = 0
++cdsbs = 0
+//*** Mobility Related Parameter ***
++u0 = 5.37625E-3 * sw_u0_pthick ua = 0 ub = 2.55345E-19
++uc = -2.325E-11 ud = 0 eu = 1
++ucs = 1 vsat = 4.648939E4 lvsat = 0.145994
++a0 = 0.105474 la0 = 7.09237E-2 ags = 3.0958
++lags = 0.999946 b0 = 0 b1 = 5.634546E-8
++keta = -0.6 ketas = 0 a1 = 0
++a2 = 1 rdsw = 420.5 * sw_rdsw_pthick rdw = 50
++rdwmin = 0 rsw = 50 rswmin = 0
++prwb = 0 prwg = -3E-5 wr = 1
+//*** Subthreshold Related Parameter ***
++voff = 0 nfactor = 0.5 eta0 = 0.159802
++leta0 = 0.994516 etab = -0.07 eta0cv = 0.08
++etabcv = -0.07 dsub = 0.825467 ldsub = 2.03115E-2
++cit = 1.956591E-3 cdsc = 2.4E-4 cdscb = 0
++cdscd = 0
+//*** dW and dL Parameter ***
++lint = 0 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 0 wln = 1 ww = 0
++wwn = 1 wwl = 0 xw = 0
++xl = 0
+//*** Output Resistance Related Parameter ***
++pclm = 1.667682 pdiblc1 = 3.84369E-2 pdiblc2 = 1.000168E-5
++pdiblcb = 0 drout = 4.316444 ldrout = 0
++pvag = 9.66412E-2 delta = 0.05 alpha0 = 0
++fbjtii = 0 beta0 = 0 beta1 = 0
++beta2 = 0.1 vdsatii0 = 0.9 tii = 0
++lii = 0 esatii = 1E7 sii0 = 0.5
++sii1 = 0.1 sii2 = 0 siid = 0
++agidl = 0 bgidl = 2.3E9 cgidl = 0.5
++egidl = 1.2 rgidl = 1 kgidl = 0
++fgidl = 0 agisl = 0 bgisl = 2.3E9
++cgisl = 0 egisl = 1.2 rgisl = 1
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 1E3 rbsh = 100 rhalo = 1E15
+//*** Gate-to-body tunneling parameters ***
++aigc = 0.31 bigc = 0.024 cigc = 0.03
++aigsd = 0.31 bigsd = 0.024 cigsd = 0.03
++nigc = 1 pigcd = 1 poxedge = 1
++dlcig = 0 toxqm = 1E-8 ntox = 1
++toxref = 2.5E-9 ebg = 1.2 alphagb1 = 0.35
++betagb1 = 0.03 vgb1 = 300 vevb = 0.075
++alphagb2 = 0.43 betagb2 = 0.05 vgb2 = 17
++vecb = 0.026 voxh = 5 deltavox = 5E-3
++aigbcp2 = 0.043 bigbcp2 = 5.4E-3 cigbcp2 = 7.5E-3
+//*** AC and Capacitance Parameter ***
++xpart = 0 cgso = 2.659147E-10/swr_tox_hv cgdo = 2.659147E-10/swr_tox_hv
++cgeo = 3E-10/swr_tox_hv cjswg = 1E-10 mjswg = 0.5
++cgsl = 7.792173E-11/sqrt(sw_rdsw_nthick) cgdl = 7.792173E-11/sqrt(sw_rdsw_nthick) ckappa = 0.24
++cf = 0 clc = 1E-8 cle = 0
++dlc = -1.469717E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0.39
++acde = 0.5 voffcv = -0.5
+//*** Temperature coefficient ***
++tnom = 27 ute = -1.347492 ucste = -4.775E-3
++ud1 = 0 kt1 = -0.165 kt1l = -6.158157E-8
++kt2 = 0.022 ua1 = 3.000582E-9 ub1 = -3.824957E-18
++uc1 = -5.6E-11 at = 5.95E4 tcjswg = 0
++tpbswg = 0 tcjswgd = 0 tpbswgd = 0
++cth0 = 1E-5 prt = 0 rth0 = 0
++ntrecf = 0 ntrecr = 0 xbjt = 0.7
++xdif = 1 xrec = 1 xtun = 0
++xdifd = 1 xrecd = 1 xtund = 0
++wth0 = 0 tvbci = 0 tbgasub = 7.02E-4
++tbgbsub = 1.108E3
+//*** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+//*** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
++rbsb = 50 rbdb = 50 gbmin = 1E-12
+//*** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+//*** Stress Effect Related Parameter ***
++saref = 1E-6 sbref = 1E-6 wlod = 0
++ku0 = 0 kvsat = 0 kvth0 = 0
++tku0 = 0 llodku0 = 0 wlodku0 = 0
++llodvth = 0 wlodvth = 0 stk2 = 0
++lodk2 = 1 steta0 = 0 lodeta0 = 1
++steta0cv = 0 lodeta0cv = 1
+//***Material Properties***
++eggbcp2 = 1.12 eggdep = 1.12 agb1 = 3.7622E-7
++bgb1 = -3.1051E10 agb2 = 4.9758E-7 bgb2 = -2.357E10
++agbc2n = 3.4254E-7 agbc2p = 4.9723E-7 bgbc2n = 1.1665E12
++bgbc2p = 7.4567E11 vtm00 = 0.026
+
+
+
+ends pthick_base
+******************************************************************
+******************************************************************
+
+model ps_nsoi1_lls bsimsoi type=n
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.034 bdos = 0.6
+***** Vth Related Parameter ***
++vth0 = 0.35 + sw_vth0_nmos_lowvt - 0.085 k1 = 0.2 k1w1 = 0
++k1w2 = 0 k2 = -0.15 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 1.7E-7 dvt0 = 2.2 dvt1 = 0.53
++dvt2 = -0.032 dvt0w = 0 dvt1w = 0
++dvt2w = 0 nlx = 1.74E-7
+***** Mobility Related Parameter ***
++u0 = 150*sw_u0_nmos_lowvt ua = 0 ub = 0
++uc = 0 vsat = 4.4E4 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_nmos_lowvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.02628 nfactor = 0.6 eta0 = 0.0736
++etab = 0 dsub = 0.05 cit = 0
++cdsc = 9E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = 1E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0 lpclm = 0 wpclm = 0.25
++pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 7.5E-3
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E8
++cgidl = 0 egidl = 0.72 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8
++iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4
++istun = 1E-5 ln = 1E-11 vrec0 = 0.075
++vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7
++vabjt = 9.7 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 1.7 lminv = -0.017 wminv = 0.118
+***** Gate-to-body tunneling parameters ***
++aigc = 0.01596 bigc = 0 cigc = 0.0273
++aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2
++nigc = 4 pigcd = 0.5 dlcig = 1E-9
++ntox = 1.024 toxref = 1.8E-9 ebg = 1.15
++alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200
++vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06
++vgb2 = 200 vecb = 3
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_lowvt mjswg = 0.6
++cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.35E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++voffcv = -0.2
+***** Temperature coefficient ***
++tnom = 22 ute = -1.5 kt1 = -0.165
++kt1l = 0 kt2 = 0.022 ua1 = 0
++ub1 = 0 uc1 = -5.6E-11 at = 100
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+***** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+***** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++minvcv = 0
++vsdfb = -5.0
++vsdth = -3.0
++csdmin = 1.0e-4
+
+******************************************************************
+******************************************************************
+
+
+model ps_nsoi2_lls bsimsoi type=n
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = 1E15
++ngate = 1E20 ados = 3.034 bdos = 0.6
+***** Vth Related Parameter ***
++vth0 = 0.46 + sw_vth0_nmos_highvt k1 = 0.2 k1w1 = 0
++k1w2 = 0 k2 = -0.15 k3 = 0
++k3b = 0 kb1 = 1.5 w0 = 2.5E-6
++lpe0 = 1.7E-7 dvt0 = 2.2 dvt1 = 0.53
++dvt2 = -0.032 dvt0w = 0 dvt1w = 0
++dvt2w = 0 nlx = 1.74E-7
+***** Mobility Related Parameter ***
++u0 = 100*sw_u0_nmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 4.4E4 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_nmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.02628 nfactor = 0.6 eta0 = 0.0736 * 0.85
++etab = 0 dsub = 0.05 cit = 0
++cdsc = 9E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = 1.6E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = -2.85E-8 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0 lpclm = 0 wpclm = 0.25
++pdiblc1 = 0 pdiblc2 = 0 pdiblcb = 0
++drout = 7.8E-3 pvag = 0 delta = 7.5E-3
++alpha0 = 1E-8 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E8
++cgidl = 0 egidl = 0.72 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-5 idbjt = 1E-5 isdif = 5.13E-8
++iddif = 4.5E-8 isrec = 1E-4 idrec = 1E-4
++istun = 1E-5 ln = 1E-11 vrec0 = 0.075
++vtun0 = 0 nbjt = 1.215 lbjt0 = 2E-7
++vabjt = 9.7 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
++minv = 1.7 lminv = -0.017 wminv = 0.118
+***** Gate-to-body tunneling parameters ***
++aigc = 0.01596 bigc = 0 cigc = 0.0273
++aigsd = 0.018128 bigsd = 4.05E-3 cigsd = 9.00909E-2
++nigc = 4 pigcd = 0.5 dlcig = 1E-9
++ntox = 1.024 toxref = 1.8E-9 ebg = 1.15
++alphagb1 = 0.35 betagb1 = 1E-4 vgb1 = 200
++vevb = 0.3 alphagb2 = 0.6136 betagb2 = 0.06
++vgb2 = 200 vecb = 3
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 1E-10 cjswg = 1E-10/sw_rdsw_nmos_highvt mjswg = 0.6
++cgsl = 4.5E-11 cgdl = 4.5E-11 ckappa = 0.6
++cf = 0 clc = 5E-7 cle = 0.6
++dlc = 3.35E-8 llc = 0 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++voffcv = -0.2
+***** Temperature coefficient ***
++tnom = 22 ute = -1.5 kt1 = -0.165
++kt1l = 0 kt2 = 0.022 ua1 = 0
++ub1 = 0 uc1 = -5.6E-11 at = 100
++tcjswg = 0 tpbswg = 0 cth0 = 1E-6
++prt = 0 rth0 = 0.2 ntrecf = 0
++ntrecr = 0 xbjt = -0.05 xdif = 1
++xrec = 1 xtun = 0 wth0 = 0
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 1 k2b = 0 dk2b = 0
++dvbd0 = 0 dvbd1 = 0 moinfd = 1E3
++vbs0pd = 0 vbs0fd = 0.5
+***** RF Model Parameters ***
++rshg = 0.1 xrcrg1 = 12 xrcrg2 = 1
++ngcon = 1 xgw = 0 xgl = 0
+***** Noise Model ***
++ntnoi = 1 tnoia = 1.5 tnoib = 3.5
++rnoia = 0.577 rnoib = 0.37
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++minvcv = 0
++vsdfb = -5.0
++vsdth = -3.0
++csdmin = 1.0e-4
+
+******************************************************************
+******************************************************************
+
+model ps_psoi1_lls bsimsoi type=p
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+***** Vth Related Parameter ***
++vth0 = -0.367 + sw_vth0_pmos_lowvt - 0.080 k1 = 0.01 k1w1 = 0
++k1w2 = 0 k2 = 0 k3 = -4
++k3b = 0 kb1 = 0 w0 = 0
++lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09
++dvt1 = 0.214 dvt2 = 0 dvt0w = 0
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 0
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+***** Mobility Related Parameter ***
++u0 = 44*sw_u0_pmos_lowvt*1.3 ua = 0 ub = 0
++uc = 0 vsat = 1E6 * 2 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_pmos_lowvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 2.21 eta0 = 0.08
++etab = -1E-3 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = -2.7E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 1E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0.675 * 3 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E9
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
+***** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 9E-3 bigsd = 0 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++ntox = 4.5 toxref = 1.8E-9 ebg = 1.2
++alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300
++vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05
++vgb2 = 17 vecb = 0.026
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_lowvt mjswg = 0.5
++cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1
++cf = 0 clc = 1E-8 cle = 0
++dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++acde = 1 moin = 500 voffcv = -0.5
+***** Temperature coefficient ***
++tnom = 22 ute = -0.73 kt1 = -0.042
++kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0
++ub1 = 0 uc1 = 0 at = 3.4E4
++tcjswg = 0 cth0 = 1E-6 prt = 0
++rth0 = 0.2 ntrecf = 0 ntrecr = 0
++xbjt = 1.15 xdif = 1.11 xrec = 0.9
++xtun = 0 wth0 = 4E-6
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+***** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++vsdfb = -4.0
++vsdth = -2.0
++csdmin = 1.0e-4
+
+******************************************************************
+******************************************************************
+
+model ps_psoi2_lls bsimsoi
++ wmax = 5.1u lmax = 0.6u
+***** Flag Parameter ***
++level = 70 version = 4.5 soimod = 1
++shmod = 1 binunit = 1 mobmod = 1
++capmod = 3 igcmod = 1 igbmod = 1
++rgatemod = 1 vgstcvmod = 2 gidlmod = 0
++fdmod = 0 type=p
+***** Process Parameter ***
++tsi = 2.8E-8 tbox = 1.4E-7 tox = sw_tox_lv
++xj = 4.5E-8 nch = 1E18 nsub = -1E15
++ngate = 1E20 ados = 2.664 bdos = 0.18144
+***** Vth Related Parameter ***
++vth0 = -0.46 + sw_vth0_pmos_highvt - 0.1 k1 = 0.01 k1w1 = 0
++k1w2 = 0 k2 = 0 k3 = -4
++k3b = 0 kb1 = 0 w0 = 0
++lpe0 = -1E-8 lpeb = 0 dvt0 = 1.09
++dvt1 = 0.214 dvt2 = 0 dvt0w = 0
++dvt1w = 1E5 dvt2w = 0 dvtp0 = 0
++dvtp1 = 0 dvtp2 = 0 dvtp3 = 0
++dvtp4 = 0 cdsbs = 1E-3
+***** Mobility Related Parameter ***
++u0 = 25*sw_u0_pmos_highvt ua = 0 ub = 0
++uc = 0 vsat = 1E6 a0 = 0.372
++ags = 0 b0 = 0 b1 = 0
++keta = 0 ketas = 0 a1 = 0
++a2 = 0.99 rdsw = 60*sw_rdsw_pmos_highvt prwb = 0
++prwg = 0 wr = 0.85
+***** Subthreshold Related Parameter ***
++voff = -0.05256 nfactor = 2.21 eta0 = 0.08
++etab = -1E-3 dsub = 0.1 cit = 0
++cdsc = 3E-3 cdscb = 0 cdscd = -2E-3
+***** dW and dL Parameter ***
++lint = -1E-8 - sw_dvar_polycd ll = 0 lln = 1
++lw = 0 lwn = 1 lwl = 0
++wint = 3E-9 dwg = 0 dwb = 0
++wl = 2E-15 wln = 1 ww = 0
++wwn = 1 wwl = 0
+***** Output Resistance Related Parameter ***
++pclm = 0.675 lpclm = 0 wpclm = 0.5
++pdiblc1 = 0.18 pdiblc2 = 0 pdiblcb = 0
++drout = 0.571 pvag = 0 delta = 0.045
++alpha0 = 0 fbjtii = 0 beta0 = 0
++beta1 = 0 beta2 = 0.13 vdsatii0 = 1.14
++tii = -0.226 lii = 0 esatii = 1E8
++sii0 = 1 sii1 = 0.1 sii2 = 0
++siid = 0 agidl = 0 bgidl = 1E9
++cgidl = 0 egidl = 0 agisl = 0
++bgisl = 1E9 egisl = 1.2 ntun = 10
++ndiode = 1.5 ndioded = 1.5 nrecf0 = 1.6
++nrecf0d = 1.6 nrecr0 = 10 nrecr0d = 10
++isbjt = 1E-4 idbjt = 1E-4 isdif = 4.5E-8
++iddif = 4.5E-8 isrec = 5E-5 idrec = 1E-4
++istun = 1E-5 ln = 1E-9 vrec0 = 0.025
++vtun0 = 0 nbjt = 1.5 lbjt0 = 2E-7
++vabjt = 10 aely = 0 ahli = 1E-15
++rbody = 10 rbsh = 100 rhalo = 1E15
+***** Gate-to-body tunneling parameters ***
++aigc = 0.62 bigc = 0 cigc = 0.1
++aigsd = 9E-3 bigsd = 0 cigsd = 0.0905
++nigc = 1 pigcd = 1 dlcig = 5E-9
++ntox = 4.5 toxref = 1.8E-9 ebg = 1.2
++alphagb1 = 0.74 betagb1 = 0.03 vgb1 = 300
++vevb = 0.075 alphagb2 = 0.43 betagb2 = 0.05
++vgb2 = 17 vecb = 0.026
+***** AC and Capacitance Parameter ***
++xpart = 0 cgso = 3.5E-10/swr_tox_lv cgdo = 3.5E-10/swr_tox_lv
++cgeo = 0 cjswg = 1E-10/sw_rdsw_pmos_highvt mjswg = 0.5
++cgsl = 8.82E-11 cgdl = 6E-11 ckappa = 0.1
++cf = 0 clc = 1E-8 cle = 0
++dlc = 3.074E-8 llc = 1.3E-16 dlbg = 0
++dwc = 0 delvt = 0 fbody = 0
++acde = 1 moin = 500 voffcv = -0.5
+***** Temperature coefficient ***
++tnom = 22 ute = -0.73 kt1 = -0.042
++kt1l = -1.1E-8 kt2 = -0.3 ua1 = 0
++ub1 = 0 uc1 = 0 at = 3.4E4
++tcjswg = 0 cth0 = 1E-6 prt = 0
++rth0 = 0.2 ntrecf = 0 ntrecr = 0
++xbjt = 1.15 xdif = 1.11 xrec = 0.9
++xtun = 0 wth0 = 4E-6
+***** BSIMSOI Built-In Potential Lowering Model Parameters ***
++vbsa = 0 nofffd = 1 vofffd = 0
++k1b = 2 k2b = 0.5 dk2b = 0.3
++dvbd0 = 0 dvbd1 = 0.45 moinfd = 1E6
+***** RF Model Parameters ***
++rshg = 1.6 xrcrg1 = 6.96 xrcrg2 = 1
++ngcon = 2 xgw = 0 xgl = 0
++gbmin = 1E-12
+***** Unknown Parameters ***
++gatetype = non_h dskip = yes
++vsdfb = -4.0
++vsdth = -2.0
++csdmin = 1.0e-4
+
+endsection fet
+**********************************
+**********************************
+simulator lang = spectre
+section resistors
+**********************************
+******************************************************************
+******************************************************************
+
+model res_mim resistor
++l = 5u
++w = 2u
++rsh = 7.2 * sw_res_mim
++tc1=8.96e-4
++tc2=1.49e-6
+******************************************************************
+******************************************************************
+
+** template model for evaluation purposes only
+** simulator lang=spectre
+model res_nplus_poly resistor
+
++l = 5u
++w = 2u
++rsh = 3000 * sw_res_nplus_poly
+
+******************************************************************
+******************************************************************
+
+** template model for evaluation purposes only
+** simulator lang=spectre
+model res_nsil_poly resistor
+
++l = 5u
++w = 2u
++rsh = 15 * sw_res_nsil_poly
+
+******************************************************************
+******************************************************************
+
+inline subckt res_pplus_poly (r1 r2)
+
+parameters w=1u l=1u
+
+ res_pplus_poly (r3 r4) main_res w=(w-0.0285u+sw_dvar_polycd*2) l=l+0.2055u
+ rhead1 (r1 r3) head_res w=w l=1u
+ rhead2 (r2 r4) head_res w=w l=1u
+
+ model main_res resistor
++rsh = 185 * sw_res_pplus_poly // extracted value = 184.73
++tc1 = 6.849E-04
++tc2 = 5.464E-07
++tnom = 25
+
+ model head_res resistor
++rsh = 0.5 * 17.5956 * sw_res_head_poly
++tc1 = -4.164E-03
++tc2 = -3.802E-06
++tnom = 25
+
+
+ends res_pplus_poly
+******************************************************************
+******************************************************************
+
+
+** template model for evaluation purposes only
+simulator lang=spectre
+subckt res_pplus (POS NEG)
+parameters
+
++ l = 5u
++ w = 2u
++ rsh = 3100
+
+** Netlist:
+Rdevice (POS NEG) resistor r=(rsh*l*sw_res_pplus)/w
+ends res_pplus
+
+******************************************************************
+******************************************************************
+// Pplus Silicide Poly resistor
+
+inline subckt res_psil_poly (r1 r2)
+
+parameters w=1u l=1u
+
+ res_psil_poly (r3 r4) main_res w=(w+0.0188u+sw_dvar_polycd*2) l=l+0.27u
+ rhead1 (r1 r3) head_res w=w l=1u
+ rhead2 (r2 r4) head_res w=w l=1u
+
+ model main_res resistor
++rsh = 15 * sw_res_psil_poly // extracted value = 16.36
++tc1 = 2.545E-03
++tnom = 25
+
+ model head_res resistor
++rsh = 0.5 * 7.73 * sw_res_head_poly
++tc1 = 9.381E-04
++tc2 = -3.305E-07
++tnom = 25
+
+
+ends res_psil_poly
+
+endsection resistors
+**********************************
diff --git a/libraries/sky90fd_fd_pr/models/parameters.scs b/libraries/sky90fd_fd_pr/models/parameters.scs
new file mode 100755
index 0000000..7af8800
--- /dev/null
+++ b/libraries/sky90fd_fd_pr/models/parameters.scs
@@ -0,0 +1,190 @@
+simulator lang=spectre
+* ==============================
+section fet_tt
+ parameters sw_tox_lv = 1.8e-09 + corner_factor*0.0
+ parameters sw_tox_hv = 6.2e-09 + corner_factor*0.0
+ parameters sw_dvar_polycd = 0.0 + corner_factor*0.0
+ parameters sw_dvar_active = 0.0 + corner_factor*0.0
+ parameters sw_align_poly = 0.0 + corner_factor*0.0
+ parameters sw_vth0_pmos_lowvt = 0.0 + corner_factor*0.0
+ parameters sw_vth0_nmos_lowvt = 0.0 + corner_factor*0.0
+ parameters sw_vth0_pmos_highvt = 0.0 + corner_factor*0.0
+ parameters sw_vth0_nmos_highvt = 0.0 + corner_factor*0.0
+ parameters sw_vth0_pthick = 0.0 + corner_factor*0.0
+ parameters sw_vth0_nthick = 0.0 + corner_factor*0.0
+ parameters sw_rdsw_pmos_lowvt = 1.0 + corner_factor*0.0
+ parameters sw_rdsw_nmos_lowvt = 1.0 + corner_factor*0.0
+ parameters sw_rdsw_pmos_highvt = 1.0 + corner_factor*0.0
+ parameters sw_rdsw_nmos_highvt = 1.0 + corner_factor*0.0
+ parameters sw_rdsw_pthick = 1.0 + corner_factor*0.0
+ parameters sw_rdsw_nthick = 1.0 + corner_factor*0.0
+ parameters sw_u0_pmos_lowvt = 1.0 + corner_factor*0.0
+ parameters sw_u0_nmos_lowvt = 1.0 + corner_factor*0.0
+ parameters sw_u0_pmos_highvt = 1.0 + corner_factor*0.0
+ parameters sw_u0_nmos_highvt = 1.0 + corner_factor*0.0
+ parameters sw_u0_pthick = 1.0 + corner_factor*0.0
+ parameters sw_u0_nthick = 1.0 + corner_factor*0.0
+endsection fet_tt
+
+* ==============================
+section fet_ff
+ parameters sw_tox_lv = 1.8e-09 + corner_factor*-1.499999999999999e-10
+ parameters sw_tox_hv = 6.2e-09 + corner_factor*-3.000000000000002e-10
+ parameters sw_dvar_polycd = 0.0 + corner_factor*-5e-09
+ parameters sw_dvar_active = 0.0 + corner_factor*-5e-09
+ parameters sw_align_poly = 0.0 + corner_factor*-1e-08
+ parameters sw_vth0_pmos_lowvt = 0.0 + corner_factor*0.05
+ parameters sw_vth0_nmos_lowvt = 0.0 + corner_factor*-0.05
+ parameters sw_vth0_pmos_highvt = 0.0 + corner_factor*0.03
+ parameters sw_vth0_nmos_highvt = 0.0 + corner_factor*-0.025
+ parameters sw_vth0_pthick = 0.0 + corner_factor*0.05
+ parameters sw_vth0_nthick = 0.0 + corner_factor*-0.05
+ parameters sw_rdsw_pmos_lowvt = 1.0 + corner_factor*-0.07499999999999996
+ parameters sw_rdsw_nmos_lowvt = 1.0 + corner_factor*-0.07499999999999996
+ parameters sw_rdsw_pmos_highvt = 1.0 + corner_factor*-0.07499999999999996
+ parameters sw_rdsw_nmos_highvt = 1.0 + corner_factor*-0.07499999999999996
+ parameters sw_rdsw_pthick = 1.0 + corner_factor*-0.07499999999999996
+ parameters sw_rdsw_nthick = 1.0 + corner_factor*-0.07499999999999996
+ parameters sw_u0_pmos_lowvt = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_u0_nmos_lowvt = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_u0_pmos_highvt = 1.0 + corner_factor*0.07499999999999996
+ parameters sw_u0_nmos_highvt = 1.0 + corner_factor*0.07499999999999996
+ parameters sw_u0_pthick = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_u0_nthick = 1.0 + corner_factor*0.07499999999999996
+endsection fet_ff
+
+* ==============================
+section fet_ss
+ parameters sw_tox_lv = 1.8e-09 + corner_factor*1.500000000000001e-10
+ parameters sw_tox_hv = 6.2e-09 + corner_factor*3.000000000000002e-10
+ parameters sw_dvar_polycd = 0.0 + corner_factor*5e-09
+ parameters sw_dvar_active = 0.0 + corner_factor*5e-09
+ parameters sw_align_poly = 0.0 + corner_factor*1e-08
+ parameters sw_vth0_pmos_lowvt = 0.0 + corner_factor*-0.05
+ parameters sw_vth0_nmos_lowvt = 0.0 + corner_factor*0.05
+ parameters sw_vth0_pmos_highvt = 0.0 + corner_factor*-0.03
+ parameters sw_vth0_nmos_highvt = 0.0 + corner_factor*0.02
+ parameters sw_vth0_pthick = 0.0 + corner_factor*-0.05
+ parameters sw_vth0_nthick = 0.0 + corner_factor*0.05
+ parameters sw_rdsw_pmos_lowvt = 1.0 + corner_factor*0.07499999999999996
+ parameters sw_rdsw_nmos_lowvt = 1.0 + corner_factor*0.07499999999999996
+ parameters sw_rdsw_pmos_highvt = 1.0 + corner_factor*0.07499999999999996
+ parameters sw_rdsw_nmos_highvt = 1.0 + corner_factor*0.07499999999999996
+ parameters sw_rdsw_pthick = 1.0 + corner_factor*0.07499999999999996
+ parameters sw_rdsw_nthick = 1.0 + corner_factor*0.07499999999999996
+ parameters sw_u0_pmos_lowvt = 1.0 + corner_factor*-0.07499999999999996
+ parameters sw_u0_nmos_lowvt = 1.0 + corner_factor*-0.07499999999999996
+ parameters sw_u0_pmos_highvt = 1.0 + corner_factor*-0.07499999999999996
+ parameters sw_u0_nmos_highvt = 1.0 + corner_factor*-0.07499999999999996
+ parameters sw_u0_pthick = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_u0_nthick = 1.0 + corner_factor*-0.07499999999999996
+endsection fet_ss
+
+* ==============================
+section fet_fs
+ parameters sw_tox_lv = 1.8e-09 + corner_factor*0.0
+ parameters sw_tox_hv = 6.2e-09 + corner_factor*0.0
+ parameters sw_dvar_polycd = 0.0 + corner_factor*0.0
+ parameters sw_dvar_active = 0.0 + corner_factor*0.0
+ parameters sw_align_poly = 0.0 + corner_factor*0.0
+ parameters sw_vth0_pmos_lowvt = 0.0 + corner_factor*-0.035
+ parameters sw_vth0_nmos_lowvt = 0.0 + corner_factor*-0.035
+ parameters sw_vth0_pmos_highvt = 0.0 + corner_factor*-0.05
+ parameters sw_vth0_nmos_highvt = 0.0 + corner_factor*-0.05
+ parameters sw_vth0_pthick = 0.0 + corner_factor*-0.08
+ parameters sw_vth0_nthick = 0.0 + corner_factor*-0.08
+ parameters sw_rdsw_pmos_lowvt = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_rdsw_nmos_lowvt = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_rdsw_pmos_highvt = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_rdsw_nmos_highvt = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_rdsw_pthick = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_rdsw_nthick = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_u0_pmos_lowvt = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_u0_nmos_lowvt = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_u0_pmos_highvt = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_u0_nmos_highvt = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_u0_pthick = 1.0 + corner_factor*-0.15000000000000002
+ parameters sw_u0_nthick = 1.0 + corner_factor*0.10000000000000009
+endsection fet_fs
+
+* ==============================
+section fet_sf
+ parameters sw_tox_lv = 1.8e-09 + corner_factor*0.0
+ parameters sw_tox_hv = 6.2e-09 + corner_factor*0.0
+ parameters sw_dvar_polycd = 0.0 + corner_factor*0.0
+ parameters sw_dvar_active = 0.0 + corner_factor*0.0
+ parameters sw_align_poly = 0.0 + corner_factor*0.0
+ parameters sw_vth0_pmos_lowvt = 0.0 + corner_factor*0.035
+ parameters sw_vth0_nmos_lowvt = 0.0 + corner_factor*0.035
+ parameters sw_vth0_pmos_highvt = 0.0 + corner_factor*0.05
+ parameters sw_vth0_nmos_highvt = 0.0 + corner_factor*0.05
+ parameters sw_vth0_pthick = 0.0 + corner_factor*0.08
+ parameters sw_vth0_nthick = 0.0 + corner_factor*0.08
+ parameters sw_rdsw_pmos_lowvt = 1.0 + corner_factor*-0.050000000000000044
+ parameters sw_rdsw_nmos_lowvt = 1.0 + corner_factor*0.050000000000000044
+ parameters sw_rdsw_pmos_highvt = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_rdsw_nmos_highvt = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_rdsw_pthick = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_rdsw_nthick = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_u0_pmos_lowvt = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_u0_nmos_lowvt = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_u0_pmos_highvt = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_u0_nmos_highvt = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_u0_pthick = 1.0 + corner_factor*0.1499999999999999
+ parameters sw_u0_nthick = 1.0 + corner_factor*-0.09999999999999998
+endsection fet_sf
+
+* ==============================
+section res_nom
+ parameters sw_res_pplus = 1.0 + corner_factor*0.0
+ parameters sw_res_nplus_poly = 1.0 + corner_factor*0.0
+ parameters sw_res_pplus_poly = 1.0 + corner_factor*0.0
+ parameters sw_res_nsil_poly = 1.0 + corner_factor*0.0
+ parameters sw_res_psil_poly = 1.0 + corner_factor*0.0
+ parameters sw_res_head_poly = 1.0 + corner_factor*0.0
+ parameters sw_res_mim = 1.0 + corner_factor*0.0
+endsection res_nom
+
+* ==============================
+section res_low
+ parameters sw_res_pplus = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_res_nplus_poly = 1.0 + corner_factor*-0.25
+ parameters sw_res_pplus_poly = 1.0 + corner_factor*-0.19999999999999996
+ parameters sw_res_nsil_poly = 1.0 + corner_factor*-0.25
+ parameters sw_res_psil_poly = 1.0 + corner_factor*-0.19999999999999996
+ parameters sw_res_head_poly = 1.0 + corner_factor*-0.19999999999999996
+ parameters sw_res_mim = 1.0 + corner_factor*-0.27
+endsection res_low
+
+* ==============================
+section res_high
+ parameters sw_res_pplus = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_res_nplus_poly = 1.0 + corner_factor*0.25
+ parameters sw_res_pplus_poly = 1.0 + corner_factor*0.19999999999999996
+ parameters sw_res_nsil_poly = 1.0 + corner_factor*0.25
+ parameters sw_res_psil_poly = 1.0 + corner_factor*0.19999999999999996
+ parameters sw_res_head_poly = 1.0 + corner_factor*0.19999999999999996
+ parameters sw_res_mim = 1.0 + corner_factor*0.27
+endsection res_high
+
+* ==============================
+section cap_nom
+ parameters sw_cap_metals = 1.0 + corner_factor*0.0
+ parameters sw_cap_mim_ca = 0.002 + corner_factor*0.0
+ parameters sw_cap_mim_dw = 1.7e-07 + corner_factor*0.0
+endsection cap_nom
+
+* ==============================
+section cap_low
+ parameters sw_cap_metals = 1.0 + corner_factor*-0.09999999999999998
+ parameters sw_cap_mim_ca = 0.002 + corner_factor*-0.00022199999999999998
+ parameters sw_cap_mim_dw = 1.7e-07 + corner_factor*-9.999999999999998e-08
+endsection cap_low
+
+* ==============================
+section cap_high
+ parameters sw_cap_metals = 1.0 + corner_factor*0.10000000000000009
+ parameters sw_cap_mim_ca = 0.002 + corner_factor*0.00023099999999999987
+ parameters sw_cap_mim_dw = 1.7e-07 + corner_factor*1.0000000000000002e-07
+endsection cap_high
+
diff --git a/libraries/sky90fd_fd_pr/sky90fd.layermap.csv b/libraries/sky90fd_fd_pr/sky90fd.layermap.csv
new file mode 100644
index 0000000..d2f1949
--- /dev/null
+++ b/libraries/sky90fd_fd_pr/sky90fd.layermap.csv
@@ -0,0 +1,282 @@
+Name,Purpose,Stream Layer,Stream Purpose, Color, Dither Index
+ACT,mask,1,0
+ACT,drawing,1,44
+ACT,fill,1,1
+ACT,experimental,1,2
+ACT,nofill,1,9
+ACT,noOpc,1,10
+ACT,maskAdd,1,21
+ACT,maskDrop,1,22
+ACT,sraf,1,23
+ACT,text,1,11
+ACT,autofill,1,12
+ACT,resistor,1,13
+ACT,drcwaive,1,16
+VTN1,mask,2,0
+VTN1,drawing,2,44
+VTN1,fill,2,1
+VTN1,drcwaive,2,16
+VTP1,mask,3,0
+VTP1,drawing,3,44
+VTP1,fill,3,1
+VTP1,drcwaive,3,16
+VTN2,mask,4,0
+VTN2,drawing,4,44
+VTN2,fill,4,1
+VTN2,drcwaive,4,16
+VTP2,mask,5,0
+VTP2,drawing,5,44
+VTP2,fill,5,1
+VTP2,drcwaive,5,16
+CAPP,mask,8,0
+CAPP,drawing,8,44
+CAPP,drcwaive,8,16
+POLY,drawing,12,44
+POLY,mask,12,0
+POLY,fill,12,1
+POLY,experimental,12,2
+POLY,net,12,4
+POLY,pin,12,5
+POLY,label,12,6
+POLY,nofill,12,9
+POLY,noOpc,12,10
+POLY,text,12,11
+POLY,autofill,12,12
+POLY,resistor,12,13
+POLY,drcwaive,12,16
+POLY,opc,12,20
+POLY,maskAdd,12,21
+POLY,maskDrop,12,22
+POLY,sraf,12,23
+FLGCHAN,drawing,13,44
+FLGCHAN,drcwaive,13,16
+NSD,mask,15,0
+NSD,drawing,15,44
+NSD,drcwaive,15,16
+PSD,mask,16,0
+PSD,drawing,16,44
+PSD,drcwaive,16,16
+NOSDX,drawing,17,44
+NOSDX,drcwaive,17,16
+NODEG,drawing,18,44
+NODEG,drcwaive,18,16
+THKOX,mask,19,0
+THKOX,drawing,19,44
+NOSLC,mask,20,0
+NOSLC,drawing,20,44
+NOSLC,drcwaive,20,16
+XN,mask,23,0
+XN,drawing,23,44
+XP,drawing,24,44
+XP,mask,24,0
+VTNT1,mask,25,0
+VTNT1,drawing,25,44
+VTNT1,fill,25,1
+VTNT1,drcwaive,25,16
+VTPT1,mask,26,0
+VTPT1,drawing,26,44
+VTPT1,fill,26,1
+VTPT1,drcwaive,26,16
+CON,mask,27,0
+CON,drawing,27,44, 0xAA11BB, 44
+CON,fill,27,1
+CON,drcwaive,27,16
+CON,maskAdd,27,21
+CON,maskDrop,27,22
+CON,sraf,27,23
+M1Cu,mask,301,0
+M1Cu,drawing,301,44
+M1Cu,fill,301,1
+M1Cu,net,301,4
+M1Cu,pin,301,5
+M1Cu,label,301,6
+M1Cu,blockage,301,7
+M1Cu,nofill,301,9
+M1Cu,noOpc,301,10
+M1Cu,text,301,11
+M1Cu,autofill,301,12
+M1Cu,gate,301,15
+M1Cu,drcwaive,301,16
+M1Cu,opc,301,20
+M1Cu,maskAdd,301,21
+M1Cu,maskDrop,301,22
+M1Cu,sraf,301,23
+M1Cu,slot,301,61
+M1Cu,slotblock,301,60
+V12Cu,mask,302,0
+V12Cu,drawing,302,44
+V12Cu,drcwaive,302,16
+V12Cu,maskAdd,302,21
+V12Cu,maskDrop,302,22
+V12Cu,sraf,302,23
+M2Cu,mask,303,0
+M2Cu,drawing,303,44
+M2Cu,fill,303,1
+M2Cu,net,303,4
+M2Cu,pin,303,5
+M2Cu,label,303,6
+M2Cu,blockage,303,7
+M2Cu,nofill,303,9
+M2Cu,noOpc,303,10
+M2Cu,text,303,11
+M2Cu,autofill,303,12
+M2Cu,gate,303,15
+M2Cu,drcwaive,303,16
+M2Cu,maskAdd,303,21
+M2Cu,maskDrop,303,22
+M2Cu,sraf,303,23
+M2Cu,slot,303,61
+M2Cu,slotblock,303,60
+V23Cu,mask,304,0
+V23Cu,drawing,304,44
+V23Cu,drcwaive,304,16
+V23Cu,maskAdd,304,21
+V23Cu,maskDrop,304,22
+V23Cu,sraf,304,23
+M3Cu,mask,305,0
+M3Cu,drawing,305,44
+M3Cu,fill,305,1
+M3Cu,net,305,4
+M3Cu,pin,305,5
+M3Cu,label,305,6
+M3Cu,blockage,305,7
+M3Cu,nofill,305,9
+M3Cu,noOpc,305,10
+M3Cu,text,305,11
+M3Cu,autofill,305,12
+M3Cu,gate,305,15
+M3Cu,drcwaive,305,16
+M3Cu,maskAdd,305,21
+M3Cu,maskDrop,305,22
+M3Cu,sraf,305,23
+M3Cu,slot,305,61
+M3Cu,slotblock,305,60
+V34Cu,mask,306,0
+V34Cu,drawing,306,44
+V34Cu,drcwaive,306,16
+V34Cu,maskAdd,306,21
+V34Cu,maskDrop,306,22
+V34Cu,sraf,306,23
+M4Cu,mask,307,0
+M4Cu,drawing,307,44
+M4Cu,fill,307,1
+M4Cu,net,307,4
+M4Cu,pin,307,5
+M4Cu,label,307,6
+M4Cu,blockage,307,7
+M4Cu,nofill,307,9
+M4Cu,noOpc,307,10
+M4Cu,text,307,11
+M4Cu,autofill,307,12
+M4Cu,gate,307,15
+M4Cu,drcwaive,307,16
+M4Cu,maskAdd,307,21
+M4Cu,maskDrop,307,22
+M4Cu,sraf,307,23
+M4Cu,slot,307,61
+M4Cu,slotblock,307,60
+V45Cu,mask,308,0
+V45Cu,drawing,308,44
+V45Cu,drcwaive,308,16
+V45Cu,maskAdd,308,21
+V45Cu,maskDrop,308,22
+V45Cu,sraf,308,23
+M5Cu,mask,309,0
+M5Cu,drawing,309,44
+M5Cu,fill,309,1
+M5Cu,net,309,4
+M5Cu,pin,309,5
+M5Cu,label,309,6
+M5Cu,blockage,309,7
+M5Cu,nofill,309,9
+M5Cu,noOpc,309,10
+M5Cu,text,309,11
+M5Cu,autofill,309,12
+M5Cu,gate,309,15
+M5Cu,drcwaive,309,16
+M5Cu,maskAdd,309,21
+M5Cu,maskDrop,309,22
+M5Cu,sraf,309,23
+M5Cu,slot,309,61
+M5Cu,slotblock,309,60
+XNT,mask,39,0
+XNT,drawing,39,44
+XPT,drawing,40,44
+XPT,mask,40,0
+VK01,mask,43,0
+VK01,maskAdd,43,21
+VK01,maskDrop,43,22
+VK01,sraf,43,23
+VK01,drawing,43,44
+VK01,drcwaive,43,16
+MTK1,mask,44,0
+MTK1,drawing,44,44
+MTK1,fill,44,1
+MTK1,net,44,4
+MTK1,pin,44,5
+MTK1,label,44,6
+MTK1,blockage,44,7
+MTK1,nofill,44,9
+MTK1,text,44,11
+MTK1,autofill,44,12
+MTK1,gate,44,15
+MTK1,drcwaive,44,16
+VR01,mask,45,0
+VR01,drawing,45,44
+VR01,drcwaive,45,16
+MRF1,mask,46,0
+MRF1,drawing,46,44
+MRF1,fill,46,1
+MRF1,net,46,4
+MRF1,pin,46,5
+MRF1,label,46,6
+MRF1,blockage,46,7
+MRF1,nofill,46,9
+MRF1,text,46,11
+MRF1,autofill,46,12
+MRF1,gate,46,15
+MRF1,drcwaive,46,16
+MRF1,fuse,46,57
+OGC,mask,49,0
+OGC,drawing,49,44
+OGC,fill,49,1
+OGC,drcwaive,49,16
+NOFILL,drawing,50,44
+NOFILL,drcwaive,50,16
+DEVR,drawing,51,44
+DEVL,drawing,52,44
+DEVD,drawing,53,44
+DEVC,drawing,54,44
+MIMCAP,mask,57,0
+MIMCAP,drawing,57,44
+MIMCAP,resistor,57,13
+RED,drawing,77,44
+GREEN,drawing,78,44
+BLUE,drawing,79,44
+YELLOW,drawing,80,44
+areaid,drawing,81,44
+areaid,seal,81,1
+areaid,core,81,2
+areaid,frame,81,3
+areaid,stdcell,81,4
+areaid,stitch,81,7
+areaid,moduleCut,81,10
+areaid,dieCut,81,11
+areaid,esd,81,19
+areaid,deadZon,81,50
+areaid,critCorner,81,51
+areaid,critSid,81,52
+areaid,opcDrop,81,54
+areaid,obsolete,81,55
+areaid,development,81,59
+areaid,v1p8volt,81,56
+ORANGE,drawing,82,44
+SUBCON,mask,146,0
+SUBCON,drawing,146,44
+SUBCON,drcwaive,146,16
+SUBSLOT,mask,145,0
+SUBSLOT,drawing,145,44
+SUBSLOT,drcwaive,145,16
+TARGET,drawing,147,44
+prBoundary,drawing,235,252
+prBoundary,boundary,235,250
\ No newline at end of file
diff --git a/requirements.txt b/requirements.txt
new file mode 100644
index 0000000..24cd0f1
--- /dev/null
+++ b/requirements.txt
@@ -0,0 +1 @@
+klayout==0.28.6
