#,PARAMETERS,XTORS,DIMENSIONS / COMMENTS,MIN,TYP,MAX,UNITS
1,Linear Threshold Voltage,,,,,,
,VT0,NCH (NE2),W/L = 10/0.28 (THIN GATE),0.53,0.63,0.73,V
,VT0,PCH (PE2),W/L = 10/0.28 (THIN GATE),-0.85,-0.73,-0.61,V
2,Saturation Current,,,,,,
,Idsat ( | Vds | = | Vgs | = 3.3V),NCH (NE2),W/L = 10/0.28 (THIN GATE),430,510,590,μA/um
,Idsat ( | Vds | = | Vgs | = 3.3V),PCH (PE2),W/L = 10/0.28 (THIN GATE),-290,-250,-210,μA/um
3,Subthreshold Current,,,,,,
,Ioff ( | Vds | = 3.63V @ 25°C),NCH (NE2),W/L = 10/0.28 (THIN GATE),--,1,100,pA/μm
,Ioff ( | Vds | = 3.63V @ 25°C),PCH (PE2),W/L = 10/0.28 (THIN GATE),-20,-1,--,pA/μm
4,Subthreshold Slope,,,,,,
,SubVt Slope,NCH (NE2),W/L = 10/0.28 (THIN GATE),--,--,150,mV/dec
,SubVt Slope,PCH (PE2),W/L = 10/0.28 (THIN GATE),--,--,150,mV/dec
5,Punch-Through Voltage,,,,,,
,BVDSS,NCH (NE2),W/L = 10/0.28 (THIN GATE),7,9,--,V
,BVDSS,PCH (PE2),W/L = 10/0.28 (THIN GATE),--,-8.5,-6.5,V
6,Field Assisted Breakdown,,,,,,
,Voltage,,,,,,
,BVDSF,NCH (NE2),W/L = 210/0.28 (THIN GATE),6.5,8.5,--,V
,BVDSF,PCH (PE2),W/L = 210/0.28 (THIN GATE),--,-8.5,-6.5,V
7,"Field Transistor Threshold

Voltage",,,,,,
,Vtsat FN-Poly,NCH (NE2),W/L = 210/0.28 (THIN GATE),6.5,8.5,--,V
,Vtsat FP-Poly,PCH (PE2),W/L = 210/0.28 (THIN GATE),--,-8.5,-6.5,V