| 10.6.1 Devices required to be laid out as matched pair |
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| Most of the time, the following are the type of devices required to be drawn for a good matched pair |
| (a) NMOS Matched pair: Two NMOS of same type (same operating voltage and process layers) required to be matched in electrical characteristics. (S: Source, D: Drain, G: Gate) |
| .. image:: images/mos1.png |
| (b) PMOS Matched pair: Two PMOS of same type (same operating voltage and process layers) required to be matched in electrical characteristics. (S: Source, D: Drain, G: Gate) |
| .. image:: images/mos2.png |
| Two BJT transistors (NPNs or PNPs) of same type (same operating voltage and process layers) required to be matched in electrical characteristics: (E: Emitter, B: Base, C: Collector). |
| .. image:: images/bjt.png |
| Two identical (same operating voltage and process layers) capacitor (e.g MIM Caps) required to be matched in electrical characteristics. (T1: Capacitor top plate terminal, T2: capacitor's bottom plate terminal). |
| .. image:: images/cap.png |
| Two identical (same operating voltage and process layers) resistors (e.g Poly resistors) required to be matched in electrical characteristics. (T1: resistors one terminal, T2: Resistor's other terminal). |
| .. image:: images/res.png |