3.0 Diode Models
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3.1 Model description and limitation
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Temperature characteristics are measured form -40 to 125 C for IV and CV it is taken @ 25C and 125C.The diodes are modeled with Level 3 diode model. The forward bias behavior and the reverse breakdown behavior are modeled for different temperatures.

Schottky Diode Breakdown Temperature dependence is not modelled.

.. csv-table::
   :file: tables_clear/23_Diode_Models.csv

3.2 Model vs EP Nominal Target
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.. csv-table::
   :file: tables_clear/24_EP_Nominal.csv

**Bias Conditions:**

- Von: @Forward current=1uA/um^2

- Reverse Breakdown: @Reverse current =10uA/um^2

- Reverse Leakage current: @Reverse voltage=6.6V

3.3 How to Use the Models
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3.3.1 For NGSPICE Users
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**To be added**

3.3.2 For XYCE Users
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**To be added**