1.2 Model Overview
==================

GlobalFoundries' models are physics-based, scalable compact models, in contrast to models based on fitting a discrete device. This allows the greatest amount of flexibility for designers and provides good model accuracy over a broad range of applications.

Within the model files, a complete set of parameters for arbitrary device geometries is generated from a single set of technology specific electrical and process data. For this, each value of the required model elements is related to a function describing the dependence on the specific electrical data (such as capacitance per area, sheet resistivity), technology data (layout design rules), operating point and temperature. This type of physics- based model allows us to leverage the large volumes of in-line test data and provides a realistic approach to statistical modeling.

Other important features:

1. Electrical data is extracted using near-nominal process hardware
2. Statistical variation is measured using either process split hardware or distributions from in-line data
3. The electrical data comes from DC characterization (over voltage and temperature) and CV characterization.

1.4 Device List
---------------

The following table lists the basic models and their corresponding names in the design manual.

1.4.1 MOSFETs
.............

.. csv-table::
   :file: tables_clear/1_MOSFETs.csv

1.5 Instance Parameters List
----------------------------

This section describes the instance parameters to be used in the net list for all the devices

1.5.1 MOSFET Instance parameters
................................

The MOSFET instance parameters shall be used in the netlist are described below with their default values: -

.. csv-table::
   :file: tables_clear/2_MOSFET_Instance.csv

.. note::

   All the instance parameters are case insensitive for HSPICE. For SPECTRE, the lower case should be used for the above parameters.