blob: e6c498e632f24ce9704da1f811f11237b0d3a70b [file] [log] [blame]
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: hai
* Command Line: /home/hai/config/cydir/bin/lnx86/bsimtran pmos_bsim4.rf pmos -p -nphv phv_modelnamechanged.pm3 phv_overlap.pm phv_iv_pxg.pm phv_cv_pxg.pm phv_bsimtranoutput.pm3
* Working Directory: /home/hai/models/s8/s8tee/models.3.1/phv/combined
* Time: Wed Mar 21 11:27:10 2007
* Rule File: pmos_bsim4.rf
* Output File: phv_bsimtranoutput.pm3
* Input Files:
* (1) phv_modelnamechanged.pm3
* (2) phv_overlap.pm
* (3) phv_iv_pxg.pm
* (4) phv_cv_pxg.pm
*copyright, Cypress Semiconductor, 2002
*BSIM3.V3 PMOS Model
.model phv.0 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 9.995e-06 wmax = 1.0005e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.981+phv_vth0_diff_0'
+k1 = 0.59804
+k2 = '0.024041+phv_k2_diff_0'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '68340+phv_vsat_diff_0'
+ua = '2.1590772e-009+phv_ua_diff_0'
+ub = '8.2164e-019+phv_ub_diff_0'
+uc = -5.2815e-012
+rdsw = '788.47+phv_rdsw_diff_0'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.021377+phv_u0_diff_0'
+a0 = '0.95964+phv_a0_diff_0'
+keta = '-0.08587+phv_keta_diff_0'
+a1 = 0
+a2 = 0.5
+ags = '1.25+phv_ags_diff_0'
+b0 = '0+phv_b0_diff_0'
+b1 = '0+phv_b1_diff_0'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.10153677+phv_voff_diff_0'
+nfactor = '1.1999+phv_nfactor_diff_0'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_0'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.064044+phv_eta0_diff_0'
+etab = -0.0073156
+dsub = 0.27967
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2297+phv_pclm_diff_0'
+pdiblc1 = 0.29403034
+pdiblc2 = 0.0048008826
+pdiblcb = -0.025
+drout = 0.89960455
+pscbe1 = 3.6263996e+008
+pscbe2 = 1.448673e-008
+pvag = 0
+delta = 0.01
+alpha0 = 9.713535e-005
+alpha1 = 0
+beta0 = 54.684511
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_0'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_0'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '7.5e-009+phv_agidl_diff_0'
+bgidl = '1.5572e009+phv_bgidl_diff_0'
+cgidl = '264.48+phv_cgidl_diff_0'
+egidl = 0.66526877
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.60348+phv_kt1_diff_0'
+kt2 = -0.019032
+at = 18000
+ute = -1.3724
+ua1 = 5.52e-010
+ub1 = -2.16e-018
+uc1 = -4.1496e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.1 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 1.4995e-05 wmax = 1.5005e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.9724+phv_vth0_diff_1'
+k1 = 0.57939
+k2 = '0.020277+phv_k2_diff_1'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '47889+phv_vsat_diff_1'
+ua = '1.6494295e-009+phv_ua_diff_1'
+ub = '1.0975e-018+phv_ub_diff_1'
+uc = -5.8546e-013
+rdsw = '788.47+phv_rdsw_diff_1'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.020384+phv_u0_diff_1'
+a0 = '0.85515+phv_a0_diff_1'
+keta = '-0.084672+phv_keta_diff_1'
+a1 = 0
+a2 = 0.5
+ags = '0.77943+phv_ags_diff_1'
+b0 = '0+phv_b0_diff_1'
+b1 = '0+phv_b1_diff_1'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.077755783+phv_voff_diff_1'
+nfactor = '1.3116+phv_nfactor_diff_1'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_1'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '4.2119e-005+phv_eta0_diff_1'
+etab = 0
+dsub = 0.54416
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2031+phv_pclm_diff_1'
+pdiblc1 = 0.3995264
+pdiblc2 = 0.0015061847
+pdiblcb = -0.025
+drout = 0.41068941
+pscbe1 = 2.994803e+008
+pscbe2 = 1.4554569e-008
+pvag = 0
+delta = 0.01
+alpha0 = 6.7813161e-005
+alpha1 = 0
+beta0 = 50.152925
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_1'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_1'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '8.3464e-009+phv_agidl_diff_1'
+bgidl = '1.6889e009+phv_bgidl_diff_1'
+cgidl = '368+phv_cgidl_diff_1'
+egidl = 0.77897916
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6412+phv_kt1_diff_1'
+kt2 = -0.019032
+at = 31800
+ute = -1.6069
+ua1 = 4.1982e-010
+ub1 = -3.8064e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.2 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 1.4995e-05 wmax = 1.5005e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.9885+phv_vth0_diff_2'
+k1 = 0.59804
+k2 = '0.024041+phv_k2_diff_2'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '67000+phv_vsat_diff_2'
+ua = '2.1590772e-009+phv_ua_diff_2'
+ub = '9.5539e-019+phv_ub_diff_2'
+uc = -5.2815e-012
+rdsw = '788.47+phv_rdsw_diff_2'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.022+phv_u0_diff_2'
+a0 = '0.95964+phv_a0_diff_2'
+keta = '-0.08587+phv_keta_diff_2'
+a1 = 0
+a2 = 0.5
+ags = '1.25+phv_ags_diff_2'
+b0 = '0+phv_b0_diff_2'
+b1 = '0+phv_b1_diff_2'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.10153677+phv_voff_diff_2'
+nfactor = '1.1999+phv_nfactor_diff_2'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_2'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.068847+phv_eta0_diff_2'
+etab = -0.0038503
+dsub = 0.27967
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.3366+phv_pclm_diff_2'
+pdiblc1 = 0.29403034
+pdiblc2 = 0.0048008826
+pdiblcb = -0.025
+drout = 0.89960455
+pscbe1 = 3.6263996e+008
+pscbe2 = 1.448673e-008
+pvag = 0
+delta = 0.01
+alpha0 = 9.713535e-005
+alpha1 = 0
+beta0 = 54.684511
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_2'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_2'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.3668e-008+phv_agidl_diff_2'
+bgidl = '1.6195e009+phv_bgidl_diff_2'
+cgidl = '316.68+phv_cgidl_diff_2'
+egidl = 0.66526877
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.60348+phv_kt1_diff_2'
+kt2 = -0.019032
+at = 18000
+ute = -1.3724
+ua1 = 5.52e-010
+ub1 = -2.16e-018
+uc1 = -4.1496e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.3 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 1.495e-06 wmax = 1.505e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.94224+phv_vth0_diff_3'
+k1 = 0.58139
+k2 = '0.019018+phv_k2_diff_3'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '150350+phv_vsat_diff_3'
+ua = '2.6796985e-009+phv_ua_diff_3'
+ub = '1.7457e-019+phv_ub_diff_3'
+uc = -1.4632e-012
+rdsw = '788.47+phv_rdsw_diff_3'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.020291+phv_u0_diff_3'
+a0 = '0.85794+phv_a0_diff_3'
+keta = '-0.0096207+phv_keta_diff_3'
+a1 = 0
+a2 = 0.5
+ags = '0.13498+phv_ags_diff_3'
+b0 = '0+phv_b0_diff_3'
+b1 = '0+phv_b1_diff_3'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.099014101+phv_voff_diff_3'
+nfactor = '1.0709+phv_nfactor_diff_3'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_3'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_3'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.84169+phv_pclm_diff_3'
+pdiblc1 = 0.39
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 2.1831475e+008
+pscbe2 = 1.4985163e-008
+pvag = 0
+delta = 0.01
+alpha0 = 2.0150852e-005
+alpha1 = 0
+beta0 = 37.469254
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_3'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_3'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.22e-008+phv_agidl_diff_3'
+bgidl = '1.5831e009+phv_bgidl_diff_3'
+cgidl = '576+phv_cgidl_diff_3'
+egidl = 0.89190707
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6000+phv_kt1_diff_3'
+kt2 = -0.019032
+at = 10000
+ute = -1.3908
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.4 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 1.495e-06 wmax = 1.505e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.94224+phv_vth0_diff_4'
+k1 = 0.58139
+k2 = '0.019018391+phv_k2_diff_4'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '180350+phv_vsat_diff_4'
+ua = '2.6796985e-009+phv_ua_diff_4'
+ub = '1.7457e-019+phv_ub_diff_4'
+uc = -3.6579e-011
+rdsw = '788.47+phv_rdsw_diff_4'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.020291+phv_u0_diff_4'
+a0 = '0.85794+phv_a0_diff_4'
+keta = '-0.0096207+phv_keta_diff_4'
+a1 = 0
+a2 = 0.5
+ags = '0.14983+phv_ags_diff_4'
+b0 = '0+phv_b0_diff_4'
+b1 = '0+phv_b1_diff_4'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.099014101+phv_voff_diff_4'
+nfactor = '1.0709+phv_nfactor_diff_4'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_4'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_4'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.84169224+phv_pclm_diff_4'
+pdiblc1 = 0.39
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 2.1831475e+008
+pscbe2 = 1.4985163e-008
+pvag = 0
+delta = 0.01
+alpha0 = 2.0150852e-005
+alpha1 = 0
+beta0 = 37.469254
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_4'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_4'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '2e-008+phv_agidl_diff_4'
+bgidl = '1.6008e009+phv_bgidl_diff_4'
+cgidl = '1200+phv_cgidl_diff_4'
+egidl = 0.89190707
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.59+phv_kt1_diff_4'
+kt2 = -0.019032
+at = 291500
+ute = -1.4098
+ua1 = 5.524e-010
+ub1 = -4.2529e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.5 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 1.495e-06 wmax = 1.505e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.95024+phv_vth0_diff_5'
+k1 = 0.58139
+k2 = '0.019018391+phv_k2_diff_5'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '180350+phv_vsat_diff_5'
+ua = '2.6796985e-009+phv_ua_diff_5'
+ub = '3.1073e-019+phv_ub_diff_5'
+uc = -2.3647e-011
+rdsw = '788.47+phv_rdsw_diff_5'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.0211+phv_u0_diff_5'
+a0 = '0.9609+phv_a0_diff_5'
+keta = '-0.0096207+phv_keta_diff_5'
+a1 = 0
+a2 = 0.5
+ags = '0.13498356+phv_ags_diff_5'
+b0 = '0+phv_b0_diff_5'
+b1 = '0+phv_b1_diff_5'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.099014101+phv_voff_diff_5'
+nfactor = '1.0709+phv_nfactor_diff_5'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_5'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_5'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.84169224+phv_pclm_diff_5'
+pdiblc1 = 0.39
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 2.1831475e+008
+pscbe2 = 1.4985163e-008
+pvag = 0
+delta = 0.01
+alpha0 = 2.0150852e-005
+alpha1 = 0
+beta0 = 37.469254
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_5'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_5'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '9.8e-009+phv_agidl_diff_5'
+bgidl = '1.7927e009+phv_bgidl_diff_5'
+cgidl = '468+phv_cgidl_diff_5'
+egidl = 0.89190707
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.596+phv_kt1_diff_5'
+kt2 = -0.019032
+at = 341570
+ute = -1.5561
+ua1 = 2.2096e-011
+ub1 = -3.7536e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.6 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 1.495e-06 wmax = 1.505e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.94153+phv_vth0_diff_6'
+k1 = 0.5906
+k2 = '0.030282+phv_k2_diff_6'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '83300+phv_vsat_diff_6'
+ua = '1.7880272e-009+phv_ua_diff_6'
+ub = '1.2353e-018+phv_ub_diff_6'
+uc = -3.6698e-012
+rdsw = '788.47+phv_rdsw_diff_6'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.017957+phv_u0_diff_6'
+a0 = '0.81545+phv_a0_diff_6'
+keta = '-0.048114+phv_keta_diff_6'
+a1 = 0
+a2 = 0.5
+ags = '0.84632+phv_ags_diff_6'
+b0 = '0+phv_b0_diff_6'
+b1 = '0+phv_b1_diff_6'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.091667534+phv_voff_diff_6'
+nfactor = '1.5024+phv_nfactor_diff_6'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_6'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.059291+phv_eta0_diff_6'
+etab = -0.013965
+dsub = 0.27363
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.035+phv_pclm_diff_6'
+pdiblc1 = 0.18699149
+pdiblc2 = 0.0038831667
+pdiblcb = -0.025
+drout = 1
+pscbe1 = 3.4108348e+008
+pscbe2 = 1.4750539e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1.8189581e-005
+alpha1 = 0
+beta0 = 45.963568
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_6'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_6'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '8.4723e-009+phv_agidl_diff_6'
+bgidl = '1.6871e009+phv_bgidl_diff_6'
+cgidl = '500+phv_cgidl_diff_6'
+egidl = 0.64214944
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.63348+phv_kt1_diff_6'
+kt2 = -0.019032
+at = 5000
+ute = -1.2996
+ua1 = 5.52e-010
+ub1 = -2.16e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.7 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.906+phv_vth0_diff_7'
+k1 = 0.59627
+k2 = '0.015964796+phv_k2_diff_7'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '45904+phv_vsat_diff_7'
+ua = '9.3613665e-010+phv_ua_diff_7'
+ub = '1.4921e-018+phv_ub_diff_7'
+uc = -2.2219153e-012
+rdsw = '788.47+phv_rdsw_diff_7'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.015822+phv_u0_diff_7'
+a0 = '0.87287+phv_a0_diff_7'
+keta = '-0.087434+phv_keta_diff_7'
+a1 = 0
+a2 = 0.5
+ags = '0.70436855+phv_ags_diff_7'
+b0 = '0+phv_b0_diff_7'
+b1 = '0+phv_b1_diff_7'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.079644655+phv_voff_diff_7'
+nfactor = '1.2953+phv_nfactor_diff_7'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_7'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.039542+phv_eta0_diff_7'
+etab = -0.00078616
+dsub = 0.30791359
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.267944+phv_pclm_diff_7'
+pdiblc1 = 0.32524895
+pdiblc2 = 0.0020127014
+pdiblcb = -0.025
+drout = 0.99999967
+pscbe1 = 3.1103691e+008
+pscbe2 = 1.4418397e-008
+pvag = 0
+delta = 0.01
+alpha0 = 7.4232853e-005
+alpha1 = 0
+beta0 = 49.951734
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_7'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_7'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.8816e-009+phv_agidl_diff_7'
+bgidl = '1.543e009+phv_bgidl_diff_7'
+cgidl = '360.18+phv_cgidl_diff_7'
+egidl = 0.1
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6380+phv_kt1_diff_7'
+kt2 = -0.019032
+at = 30000
+ute = -1.4498
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.8 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.92805+phv_vth0_diff_8'
+k1 = 0.59348
+k2 = '0.017615423+phv_k2_diff_8'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '21066+phv_vsat_diff_8'
+ua = '1.6523781e-009+phv_ua_diff_8'
+ub = '9.7216e-019+phv_ub_diff_8'
+uc = -1.2317537e-011
+rdsw = '788.47+phv_rdsw_diff_8'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.018029+phv_u0_diff_8'
+a0 = '0.96928+phv_a0_diff_8'
+keta = '-0.11488+phv_keta_diff_8'
+a1 = 0
+a2 = 0.5
+ags = '0.73757129+phv_ags_diff_8'
+b0 = '0+phv_b0_diff_8'
+b1 = '0+phv_b1_diff_8'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.086157622+phv_voff_diff_8'
+nfactor = '1.2919+phv_nfactor_diff_8'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_8'
+cit = 6.9459796e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0+phv_eta0_diff_8'
+etab = -0.000648
+dsub = 0.26
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.9035348+phv_pclm_diff_8'
+pdiblc1 = 0.3909083
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.63800017
+pscbe1 = 3.0990248e+008
+pscbe2 = 1.4767911e-008
+pvag = 0
+delta = 0.01
+alpha0 = 0.00031976739
+alpha1 = 0
+beta0 = 55.34354
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_8'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_8'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '4e-008+phv_agidl_diff_8'
+bgidl = '1.6056e009+phv_bgidl_diff_8'
+cgidl = '840+phv_cgidl_diff_8'
+egidl = 1.4570704
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.615+phv_kt1_diff_8'
+kt2 = -0.019032
+at = 16836
+ute = -1.4038
+ua1 = 7.7336e-010
+ub1 = -2.8009e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.9 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.926+phv_vth0_diff_9'
+k1 = 0.6051
+k2 = '0.015276967+phv_k2_diff_9'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '120230+phv_vsat_diff_9'
+ua = '1.9671141e-009+phv_ua_diff_9'
+ub = '5.3455e-019+phv_ub_diff_9'
+uc = -2.9902062e-011
+rdsw = '788.47+phv_rdsw_diff_9'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.018494+phv_u0_diff_9'
+a0 = '0.86595+phv_a0_diff_9'
+keta = '-0.0098272+phv_keta_diff_9'
+a1 = 0
+a2 = 0.5
+ags = '0.13659769+phv_ags_diff_9'
+b0 = '0+phv_b0_diff_9'
+b1 = '0+phv_b1_diff_9'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.097070481+phv_voff_diff_9'
+nfactor = '0.99229+phv_nfactor_diff_9'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_9'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_9'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.91362237+phv_pclm_diff_9'
+pdiblc1 = 0.39
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 2.2505867e+008
+pscbe2 = 1.5007389e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_9'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_9'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '3.36e-008+phv_agidl_diff_9'
+bgidl = '1.4723e009+phv_bgidl_diff_9'
+cgidl = '492+phv_cgidl_diff_9'
+egidl = 2
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.576+phv_kt1_diff_9'
+kt2 = -0.019032
+at = 219650
+ute = -1.4104
+ua1 = 2.2096e-011
+ub1 = -2.3998e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.10 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.94868+phv_vth0_diff_10'
+k1 = 0.58485
+k2 = '0.020475051+phv_k2_diff_10'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '80156+phv_vsat_diff_10'
+ua = '2.2507416e-009+phv_ua_diff_10'
+ub = '3.4083e-019+phv_ub_diff_10'
+uc = -4.5108582e-011
+rdsw = '788.47+phv_rdsw_diff_10'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.01919+phv_u0_diff_10'
+a0 = '0.90565+phv_a0_diff_10'
+keta = '-0.0081819+phv_keta_diff_10'
+a1 = 0
+a2 = 0.5
+ags = '0.13283238+phv_ags_diff_10'
+b0 = '0+phv_b0_diff_10'
+b1 = '0+phv_b1_diff_10'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.10768013+phv_voff_diff_10'
+nfactor = '0.94783+phv_nfactor_diff_10'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_10'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_10'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.08353125+phv_pclm_diff_10'
+pdiblc1 = 0.39
+pdiblc2 = 0.0034380666
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 2.2471761e+008
+pscbe2 = 1.4998723e-008
+pvag = 0
+delta = 0.01
+alpha0 = 6.4242641e-005
+alpha1 = 0
+beta0 = 39.039478
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_10'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_10'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '2e-008+phv_agidl_diff_10'
+bgidl = '1.5204e009+phv_bgidl_diff_10'
+cgidl = '1400+phv_cgidl_diff_10'
+egidl = 1.5199352
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.556+phv_kt1_diff_10'
+kt2 = -0.019032
+at = 151090
+ute = -1.5561
+ua1 = 2.2096e-011
+ub1 = -3.0767e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.11 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.89504+phv_vth0_diff_11'
+k1 = 0.55947
+k2 = '0.036713432+phv_k2_diff_11'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '117570+phv_vsat_diff_11'
+ua = '1.2669543e-009+phv_ua_diff_11'
+ub = '1.2082e-018+phv_ub_diff_11'
+uc = -5.9494373e-012
+rdsw = '788.47+phv_rdsw_diff_11'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.016056+phv_u0_diff_11'
+a0 = '0.72074+phv_a0_diff_11'
+keta = '-0.0084885+phv_keta_diff_11'
+a1 = 0
+a2 = 0.5
+ags = '0.11578365+phv_ags_diff_11'
+b0 = '0+phv_b0_diff_11'
+b1 = '0+phv_b1_diff_11'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.11318245+phv_voff_diff_11'
+nfactor = '1.2536+phv_nfactor_diff_11'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_11'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.15643+phv_eta0_diff_11'
+etab = -0.010946
+dsub = 0.27819971
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.64077291+phv_pclm_diff_11'
+pdiblc1 = 0.13281489
+pdiblc2 = 0.0020780138
+pdiblcb = -0.225
+drout = 1
+pscbe1 = 8e+008
+pscbe2 = 5.6866809e-009
+pvag = 0
+delta = 0.01
+alpha0 = 4.0002497e-006
+alpha1 = 0
+beta0 = 38.089036
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_11'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_11'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.24e-008+phv_agidl_diff_11'
+bgidl = '2.0463e009+phv_bgidl_diff_11'
+cgidl = '300+phv_cgidl_diff_11'
+egidl = 0.1352153
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.60348+phv_kt1_diff_11'
+kt2 = -0.019032
+at = 1000
+ute = -1.2208
+ua1 = 5.52e-010
+ub1 = -2.16e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.12 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.91036+phv_vth0_diff_12'
+k1 = 0.62735
+k2 = '0.017816539+phv_k2_diff_12'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '74424+phv_vsat_diff_12'
+ua = '1.2023341e-009+phv_ua_diff_12'
+ub = '1.4559e-018+phv_ub_diff_12'
+uc = -2.7539501e-012
+rdsw = '788.47+phv_rdsw_diff_12'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.016763+phv_u0_diff_12'
+a0 = '0.84201+phv_a0_diff_12'
+keta = '-0.051484+phv_keta_diff_12'
+a1 = 0
+a2 = 0.5
+ags = '0.72220108+phv_ags_diff_12'
+b0 = '0+phv_b0_diff_12'
+b1 = '0+phv_b1_diff_12'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.079967669+phv_voff_diff_12'
+nfactor = '1.473+phv_nfactor_diff_12'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_12'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.017878+phv_eta0_diff_12'
+etab = 0
+dsub = 0.27181946
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.0998724+phv_pclm_diff_12'
+pdiblc1 = 0.39855546
+pdiblc2 = 0.0078480034
+pdiblcb = -0.025
+drout = 0.64228671
+pscbe1 = 3.3852051e+008
+pscbe2 = 1.4615273e-008
+pvag = 0
+delta = 0.01
+alpha0 = 2.9655204e-005
+alpha1 = 0
+beta0 = 48.175076
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_12'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_12'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '4.7e-008+phv_agidl_diff_12'
+bgidl = '1.5488e009+phv_bgidl_diff_12'
+cgidl = '966+phv_cgidl_diff_12'
+egidl = 1.2131988
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.65348+phv_kt1_diff_12'
+kt2 = -0.019032
+at = 10000
+ute = -1.3412
+ua1 = 5.52e-010
+ub1 = -1.8696e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.02e-06
+sbref = 2.01e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.13 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.95e-07 lmax = 8.05e-07 wmin = 9.95e-07 wmax = 1.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.88436+phv_vth0_diff_13'
+k1 = 0.57696
+k2 = '0.02202554+phv_k2_diff_13'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '57942+phv_vsat_diff_13'
+ua = '1.3736548e-009+phv_ua_diff_13'
+ub = '1.2992e-018+phv_ub_diff_13'
+uc = -1.8899043e-012
+rdsw = '788.47+phv_rdsw_diff_13'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.016917+phv_u0_diff_13'
+a0 = '0.79601+phv_a0_diff_13'
+keta = '-0.064617+phv_keta_diff_13'
+a1 = 0
+a2 = 0.5
+ags = '0.7357361+phv_ags_diff_13'
+b0 = '0+phv_b0_diff_13'
+b1 = '0+phv_b1_diff_13'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.083615082+phv_voff_diff_13'
+nfactor = '1.4934+phv_nfactor_diff_13'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_13'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.0068242+phv_eta0_diff_13'
+etab = -0.0040945
+dsub = 0.26520582
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.152681+phv_pclm_diff_13'
+pdiblc1 = 0.45413396
+pdiblc2 = 0.0066035801
+pdiblcb = -0.025
+drout = 0.54609838
+pscbe1 = 3.6891994e+008
+pscbe2 = 1.3484359e-008
+pvag = 0
+delta = 0.01
+alpha0 = 3.2455677e-005
+alpha1 = 0
+beta0 = 47.447604
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_13'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_13'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '7.7552e-009+phv_agidl_diff_13'
+bgidl = '1.7886e009+phv_bgidl_diff_13'
+cgidl = '510+phv_cgidl_diff_13'
+egidl = 0.16211671
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6405+phv_kt1_diff_13'
+kt2 = -0.019032
+at = 20000
+ute = -1.4798
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.41e-06
+sbref = 2.41e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.14 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 1.9995e-05 wmax = 2.0005e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.97224+phv_vth0_diff_14'
+k1 = 0.57939
+k2 = '0.020277+phv_k2_diff_14'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '47889+phv_vsat_diff_14'
+ua = '1.6494295e-009+phv_ua_diff_14'
+ub = '1.0975e-018+phv_ub_diff_14'
+uc = -5.8546e-013
+rdsw = '788.47+phv_rdsw_diff_14'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.020384+phv_u0_diff_14'
+a0 = '0.85515+phv_a0_diff_14'
+keta = '-0.084672+phv_keta_diff_14'
+a1 = 0
+a2 = 0.5
+ags = '0.77943+phv_ags_diff_14'
+b0 = '0+phv_b0_diff_14'
+b1 = '0+phv_b1_diff_14'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.077755783+phv_voff_diff_14'
+nfactor = '1.3116+phv_nfactor_diff_14'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_14'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '2.8641e-005+phv_eta0_diff_14'
+etab = 0
+dsub = 0.54416
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2031+phv_pclm_diff_14'
+pdiblc1 = 0.3995264
+pdiblc2 = 0.0015061847
+pdiblcb = -0.025
+drout = 0.41068941
+pscbe1 = 2.994803e+008
+pscbe2 = 1.4554569e-008
+pvag = 0
+delta = 0.01
+alpha0 = 6.7813161e-005
+alpha1 = 0
+beta0 = 50.152925
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_14'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_14'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.085e-008+phv_agidl_diff_14'
+bgidl = '1.6213e009+phv_bgidl_diff_14'
+cgidl = '500.48+phv_cgidl_diff_14'
+egidl = 0.77897916
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6362+phv_kt1_diff_14'
+kt2 = -0.019032
+at = 29800
+ute = -1.6069
+ua1 = 4.1982e-010
+ub1 = -3.8064e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.15 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 1.9995e-05 wmax = 2.0005e-05
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.9885+phv_vth0_diff_15'
+k1 = 0.59804
+k2 = '0.024041+phv_k2_diff_15'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '67000+phv_vsat_diff_15'
+ua = '2.1590772e-009+phv_ua_diff_15'
+ub = '9.5539e-019+phv_ub_diff_15'
+uc = -5.2815e-012
+rdsw = '788.47+phv_rdsw_diff_15'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.022232+phv_u0_diff_15'
+a0 = '0.95964+phv_a0_diff_15'
+keta = '-0.08587+phv_keta_diff_15'
+a1 = 0
+a2 = 0.5
+ags = '1.25+phv_ags_diff_15'
+b0 = '0+phv_b0_diff_15'
+b1 = '0+phv_b1_diff_15'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.10153677+phv_voff_diff_15'
+nfactor = '1.1999+phv_nfactor_diff_15'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_15'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.080055+phv_eta0_diff_15'
+etab = -0.0038503
+dsub = 0.27967
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.3366+phv_pclm_diff_15'
+pdiblc1 = 0.29403034
+pdiblc2 = 0.0048008826
+pdiblcb = -0.025
+drout = 0.89960455
+pscbe1 = 3.6263996e+008
+pscbe2 = 1.448673e-008
+pvag = 0
+delta = 0.01
+alpha0 = 9.713535e-005
+alpha1 = 0
+beta0 = 54.684511
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_15'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_15'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.3888e-008+phv_agidl_diff_15'
+bgidl = '1.6145e009+phv_bgidl_diff_15'
+cgidl = '876+phv_cgidl_diff_15'
+egidl = 0.66526877
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.61348+phv_kt1_diff_15'
+kt2 = -0.019032
+at = 18000
+ute = -1.3724
+ua1 = 5.52e-010
+ub1 = -2.16e-018
+uc1 = -4.1496e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.16 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.94424+phv_vth0_diff_16'
+k1 = 0.57939
+k2 = '0.020277382+phv_k2_diff_16'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '47889+phv_vsat_diff_16'
+ua = '1.6494295e-009+phv_ua_diff_16'
+ub = '1.2762e-018+phv_ub_diff_16'
+uc = -5.8546e-013
+rdsw = '788.47+phv_rdsw_diff_16'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.019197+phv_u0_diff_16'
+a0 = '0.85515+phv_a0_diff_16'
+keta = '-0.084672+phv_keta_diff_16'
+a1 = 0
+a2 = 0.5
+ags = '0.72169009+phv_ags_diff_16'
+b0 = '0+phv_b0_diff_16'
+b1 = '0+phv_b1_diff_16'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.077755783+phv_voff_diff_16'
+nfactor = '1.3116+phv_nfactor_diff_16'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_16'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.0087749+phv_eta0_diff_16'
+etab = 0
+dsub = 0.2989895
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2031125+phv_pclm_diff_16'
+pdiblc1 = 0.3995264
+pdiblc2 = 0.0015061847
+pdiblcb = -0.025
+drout = 0.41068941
+pscbe1 = 2.994803e+008
+pscbe2 = 1.4554569e-008
+pvag = 0
+delta = 0.01
+alpha0 = 6.7813161e-005
+alpha1 = 0
+beta0 = 50.152925
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_16'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_16'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '6.0144e-009+phv_agidl_diff_16'
+bgidl = '1.5638e009+phv_bgidl_diff_16'
+cgidl = '920+phv_cgidl_diff_16'
+egidl = 0.77897916
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6300+phv_kt1_diff_16'
+kt2 = -0.019032
+at = 30000
+ute = -1.4608
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.17 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.97089+phv_vth0_diff_17'
+k1 = 0.56874
+k2 = '0.021845+phv_k2_diff_17'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '136210+phv_vsat_diff_17'
+ua = '2.5957213e-009+phv_ua_diff_17'
+ub = '5.9095e-019+phv_ub_diff_17'
+uc = 0
+rdsw = '788.47+phv_rdsw_diff_17'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.021802+phv_u0_diff_17'
+a0 = '0.92576+phv_a0_diff_17'
+keta = '-0.01712+phv_keta_diff_17'
+a1 = 0
+a2 = 0.5
+ags = '0.19+phv_ags_diff_17'
+b0 = '0+phv_b0_diff_17'
+b1 = '0+phv_b1_diff_17'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.12041324+phv_voff_diff_17'
+nfactor = '1.2+phv_nfactor_diff_17'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_17'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.1438+phv_eta0_diff_17'
+etab = -0.015108
+dsub = 0.29315
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.60569+phv_pclm_diff_17'
+pdiblc1 = 0.1893326
+pdiblc2 = 0.003828528
+pdiblcb = -0.225
+drout = 1
+pscbe1 = 3.6834658e+008
+pscbe2 = 1.4543145e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_17'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_17'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '9.3141e-009+phv_agidl_diff_17'
+bgidl = '1.2201e009+phv_bgidl_diff_17'
+cgidl = '468.55+phv_cgidl_diff_17'
+egidl = 2
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.575+phv_kt1_diff_17'
+kt2 = -0.019032
+at = 171730
+ute = -1.4498
+ua1 = 5.524e-010
+ub1 = -4.1218e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.18 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.97767+phv_vth0_diff_18'
+k1 = 0.58606
+k2 = '0.019966+phv_k2_diff_18'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '124910+phv_vsat_diff_18'
+ua = '2.9651633e-009+phv_ua_diff_18'
+ub = '1.3357e-019+phv_ub_diff_18'
+uc = -2.8099e-011
+rdsw = '788.47+phv_rdsw_diff_18'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.022592+phv_u0_diff_18'
+a0 = '0.8749+phv_a0_diff_18'
+keta = '-0.010964+phv_keta_diff_18'
+a1 = 0
+a2 = 0.5
+ags = '0.15682+phv_ags_diff_18'
+b0 = '0+phv_b0_diff_18'
+b1 = '0+phv_b1_diff_18'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.091596347+phv_voff_diff_18'
+nfactor = '0.8+phv_nfactor_diff_18'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_18'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_18'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.83237107+phv_pclm_diff_18'
+pdiblc1 = 0.39
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 1e+008
+pscbe2 = 4.602312e-008
+pvag = 0
+delta = 0.01
+alpha0 = 2.2543089e-005
+alpha1 = 0
+beta0 = 37.371509
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_18'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_18'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '9.4e-009+phv_agidl_diff_18'
+bgidl = '1.8618e009+phv_bgidl_diff_18'
+cgidl = '660+phv_cgidl_diff_18'
+egidl = 0.16572358
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.576+phv_kt1_diff_18'
+kt2 = -0.019032
+at = 229660
+ute = -1.5561
+ua1 = 2.2096e-011
+ub1 = -3.7536e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.19 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.97709+phv_vth0_diff_19'
+k1 = 0.59521
+k2 = '0.019927+phv_k2_diff_19'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '200000+phv_vsat_diff_19'
+ua = '2.7044348e-009+phv_ua_diff_19'
+ub = '1.4379e-019+phv_ub_diff_19'
+uc = -3.9972e-011
+rdsw = '788.47+phv_rdsw_diff_19'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.021226+phv_u0_diff_19'
+a0 = '0.89552+phv_a0_diff_19'
+keta = '-0.0079259+phv_keta_diff_19'
+a1 = 0
+a2 = 0.5
+ags = '0.1318+phv_ags_diff_19'
+b0 = '0+phv_b0_diff_19'
+b1 = '0+phv_b1_diff_19'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.093204657+phv_voff_diff_19'
+nfactor = '1.0849+phv_nfactor_diff_19'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_19'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_19'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.08353125+phv_pclm_diff_19'
+pdiblc1 = 0.39
+pdiblc2 = 0.0029407877
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 3.3371283e+008
+pscbe2 = 1.5000958e-008
+pvag = 0
+delta = 0.01
+alpha0 = 5.0667189e-005
+alpha1 = 0
+beta0 = 38.266046
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_19'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_19'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.4775e-008+phv_agidl_diff_19'
+bgidl = '1.7757e009+phv_bgidl_diff_19'
+cgidl = '1000+phv_cgidl_diff_19'
+egidl = 0.69350825
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.576+phv_kt1_diff_19'
+kt2 = -0.019032
+at = 448800
+ute = -1.5361
+ua1 = 2.2096e-011
+ub1 = -3.6627e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.20 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.95089+phv_vth0_diff_20'
+k1 = 0.56874
+k2 = '0.028835+phv_k2_diff_20'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '130760+phv_vsat_diff_20'
+ua = '2.5957213e-009+phv_ua_diff_20'
+ub = '4.0614e-019+phv_ub_diff_20'
+uc = -3.6e-011
+rdsw = '788.47+phv_rdsw_diff_20'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.020518+phv_u0_diff_20'
+a0 = '0.92576+phv_a0_diff_20'
+keta = '-0.00090104+phv_keta_diff_20'
+a1 = 0
+a2 = 0.5
+ags = '0.19+phv_ags_diff_20'
+b0 = '0+phv_b0_diff_20'
+b1 = '0+phv_b1_diff_20'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.12041324+phv_voff_diff_20'
+nfactor = '1.2+phv_nfactor_diff_20'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_20'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.1438+phv_eta0_diff_20'
+etab = -0.015108
+dsub = 0.29315
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.60569+phv_pclm_diff_20'
+pdiblc1 = 0.1893326
+pdiblc2 = 0.003828528
+pdiblcb = -0.225
+drout = 1
+pscbe1 = 3.6834658e+008
+pscbe2 = 1.4543145e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_20'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_20'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.63e-008+phv_agidl_diff_20'
+bgidl = '1.2201e009+phv_bgidl_diff_20'
+cgidl = '768.42+phv_cgidl_diff_20'
+egidl = 2
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.58948+phv_kt1_diff_20'
+kt2 = -0.019032
+at = 18000
+ute = -1.2724
+ua1 = 5.52e-010
+ub1 = -2.894e-018
+uc1 = -4.1496e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.21 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 2.995e-06 wmax = 3.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.93332+phv_vth0_diff_21'
+k1 = 0.57633
+k2 = '0.025668+phv_k2_diff_21'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '78336+phv_vsat_diff_21'
+ua = '2.3466113e-009+phv_ua_diff_21'
+ub = '4.9371e-019+phv_ub_diff_21'
+uc = -2.4658e-012
+rdsw = '788.47+phv_rdsw_diff_21'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.019791+phv_u0_diff_21'
+a0 = '0.84351+phv_a0_diff_21'
+keta = '-0.043025+phv_keta_diff_21'
+a1 = 0
+a2 = 0.5
+ags = '0.72112+phv_ags_diff_21'
+b0 = '0+phv_b0_diff_21'
+b1 = '0+phv_b1_diff_21'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.072821331+phv_voff_diff_21'
+nfactor = '1.495+phv_nfactor_diff_21'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_21'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.00024193+phv_eta0_diff_21'
+etab = 0
+dsub = 0.27482
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.97221+phv_pclm_diff_21'
+pdiblc1 = 0.45695731
+pdiblc2 = 0.011410926
+pdiblcb = -0.025
+drout = 0.43179535
+pscbe1 = 4e+008
+pscbe2 = 1.3503615e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1.7240171e-005
+alpha1 = 0
+beta0 = 45.34673
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_21'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_21'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.1694e-008+phv_agidl_diff_21'
+bgidl = '1.8073e009+phv_bgidl_diff_21'
+cgidl = '520+phv_cgidl_diff_21'
+egidl = 0.48103697
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.64548+phv_kt1_diff_21'
+kt2 = -0.019032
+at = 18000
+ute = -1.4573
+ua1 = 5.52e-010
+ub1 = -3.2992e-018
+uc1 = -4.1496e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.02e-06
+sbref = 2.01e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.22 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.94824+phv_vth0_diff_22'
+k1 = 0.57939
+k2 = '0.020277+phv_k2_diff_22'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '47889+phv_vsat_diff_22'
+ua = '1.6494295e-009+phv_ua_diff_22'
+ub = '1.0975e-018+phv_ub_diff_22'
+uc = -5.8546e-013
+rdsw = '788.47+phv_rdsw_diff_22'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.019197+phv_u0_diff_22'
+a0 = '0.85515+phv_a0_diff_22'
+keta = '-0.084672+phv_keta_diff_22'
+a1 = 0
+a2 = 0.5
+ags = '0.77943+phv_ags_diff_22'
+b0 = '0+phv_b0_diff_22'
+b1 = '0+phv_b1_diff_22'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.077755783+phv_voff_diff_22'
+nfactor = '1.3116+phv_nfactor_diff_22'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_22'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.00052649+phv_eta0_diff_22'
+etab = 0
+dsub = 0.29899
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2031125+phv_pclm_diff_22'
+pdiblc1 = 0.3995264
+pdiblc2 = 0.0015061847
+pdiblcb = -0.025
+drout = 0.41068941
+pscbe1 = 2.994803e+008
+pscbe2 = 1.4554569e-008
+pvag = 0
+delta = 0.01
+alpha0 = 6.7813161e-005
+alpha1 = 0
+beta0 = 50.152925
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_22'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_22'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '9.2738e-009+phv_agidl_diff_22'
+bgidl = '1.5638e009+phv_bgidl_diff_22'
+cgidl = '368+phv_cgidl_diff_22'
+egidl = 0.77897916
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6300+phv_kt1_diff_22'
+kt2 = -0.019032
+at = 30000
+ute = -1.4608
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.23 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.98389+phv_vth0_diff_23'
+k1 = 0.56874
+k2 = '0.021845+phv_k2_diff_23'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '126210+phv_vsat_diff_23'
+ua = '2.5957213e-009+phv_ua_diff_23'
+ub = '8.9538e-019+phv_ub_diff_23'
+uc = 0
+rdsw = '788.47+phv_rdsw_diff_23'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.023194+phv_u0_diff_23'
+a0 = '0.92576+phv_a0_diff_23'
+keta = '-0.01712+phv_keta_diff_23'
+a1 = 0
+a2 = 0.5
+ags = '0.19+phv_ags_diff_23'
+b0 = '0+phv_b0_diff_23'
+b1 = '0+phv_b1_diff_23'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.12041324+phv_voff_diff_23'
+nfactor = '1.2+phv_nfactor_diff_23'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_23'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.1438+phv_eta0_diff_23'
+etab = -0.015108
+dsub = 0.29315
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.60569082+phv_pclm_diff_23'
+pdiblc1 = 0.1893326
+pdiblc2 = 0.003828528
+pdiblcb = -0.225
+drout = 1
+pscbe1 = 3.6834658e+008
+pscbe2 = 1.4543145e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_23'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_23'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '9.7022e-009+phv_agidl_diff_23'
+bgidl = '1.2201e009+phv_bgidl_diff_23'
+cgidl = '468.55+phv_cgidl_diff_23'
+egidl = 2
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5750+phv_kt1_diff_23'
+kt2 = -0.019032
+at = 104800
+ute = -1.4498
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.24 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.98767+phv_vth0_diff_24'
+k1 = 0.58606
+k2 = '0.019966+phv_k2_diff_24'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '124910+phv_vsat_diff_24'
+ua = '2.9651633e-009+phv_ua_diff_24'
+ub = '2.244e-019+phv_ub_diff_24'
+uc = -2.8099e-011
+rdsw = '788.47+phv_rdsw_diff_24'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.023496+phv_u0_diff_24'
+a0 = '0.8749+phv_a0_diff_24'
+keta = '-0.010964+phv_keta_diff_24'
+a1 = 0
+a2 = 0.5
+ags = '0.15682+phv_ags_diff_24'
+b0 = '0+phv_b0_diff_24'
+b1 = '0+phv_b1_diff_24'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.091596347+phv_voff_diff_24'
+nfactor = '0.8+phv_nfactor_diff_24'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_24'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_24'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.83237107+phv_pclm_diff_24'
+pdiblc1 = 0.39
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 1e+008
+pscbe2 = 4.602312e-008
+pvag = 0
+delta = 0.01
+alpha0 = 2.2543089e-005
+alpha1 = 0
+beta0 = 37.371509
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_24'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_24'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '7.896e-009+phv_agidl_diff_24'
+bgidl = '1.8618e009+phv_bgidl_diff_24'
+cgidl = '660+phv_cgidl_diff_24'
+egidl = 0.16572358
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.576+phv_kt1_diff_24'
+kt2 = -0.019032
+at = 235700
+ute = -1.5561
+ua1 = 2.2096e-011
+ub1 = -3.8766e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.25 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.99209+phv_vth0_diff_25'
+k1 = 0.59521
+k2 = '0.019927+phv_k2_diff_25'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '200000+phv_vsat_diff_25'
+ua = '2.7044348e-009+phv_ua_diff_25'
+ub = '3.9379e-019+phv_ub_diff_25'
+uc = -3.9972e-011
+rdsw = '788.47+phv_rdsw_diff_25'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.0225+phv_u0_diff_25'
+a0 = '0.89552+phv_a0_diff_25'
+keta = '-0.0079259+phv_keta_diff_25'
+a1 = 0
+a2 = 0.5
+ags = '0.1318+phv_ags_diff_25'
+b0 = '0+phv_b0_diff_25'
+b1 = '0+phv_b1_diff_25'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.093204657+phv_voff_diff_25'
+nfactor = '1.0849+phv_nfactor_diff_25'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_25'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_25'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.08353125+phv_pclm_diff_25'
+pdiblc1 = 0.39
+pdiblc2 = 0.0029407877
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 3.3371283e+008
+pscbe2 = 1.5000958e-008
+pvag = 0
+delta = 0.01
+alpha0 = 5.0667189e-005
+alpha1 = 0
+beta0 = 38.266046
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_25'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_25'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.5366e-008+phv_agidl_diff_25'
+bgidl = '1.7047e009+phv_bgidl_diff_25'
+cgidl = '1000+phv_cgidl_diff_25'
+egidl = 0.69350825
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.576+phv_kt1_diff_25'
+kt2 = -0.019032
+at = 448800
+ute = -1.5361
+ua1 = 2.2096e-011
+ub1 = -3.6627e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.26 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.98229+phv_vth0_diff_26'
+k1 = 0.58637
+k2 = '0.02619+phv_k2_diff_26'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '73540+phv_vsat_diff_26'
+ua = '2.8298029e-009+phv_ua_diff_26'
+ub = '5.993e-019+phv_ub_diff_26'
+uc = -9.8477e-012
+rdsw = '788.47+phv_rdsw_diff_26'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.02333+phv_u0_diff_26'
+a0 = '0.79883+phv_a0_diff_26'
+keta = '-0.075644+phv_keta_diff_26'
+a1 = 0
+a2 = 0.5
+ags = '1.25+phv_ags_diff_26'
+b0 = '0+phv_b0_diff_26'
+b1 = '0+phv_b1_diff_26'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.13295587+phv_voff_diff_26'
+nfactor = '1.3232+phv_nfactor_diff_26'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_26'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.040327+phv_eta0_diff_26'
+etab = -0.010229
+dsub = 0.29048905
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.184192+phv_pclm_diff_26'
+pdiblc1 = 0.39269218
+pdiblc2 = 0.0079692374
+pdiblcb = -0.025
+drout = 0.72266506
+pscbe1 = 3.1758291e+008
+pscbe2 = 1.4459233e-008
+pvag = 0
+delta = 0.01
+alpha0 = 4.4081425e-005
+alpha1 = 0
+beta0 = 50.534039
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_26'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_26'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.1634e-008+phv_agidl_diff_26'
+bgidl = '1.6718e009+phv_bgidl_diff_26'
+cgidl = '400+phv_cgidl_diff_26'
+egidl = 0.67432849
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.58348+phv_kt1_diff_26'
+kt2 = -0.019032
+at = 18000
+ute = -1.3724
+ua1 = 5.52e-010
+ub1 = -2.894e-018
+uc1 = -4.1496e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.27 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.96559+phv_vth0_diff_27'
+k1 = 0.56924
+k2 = '0.025929+phv_k2_diff_27'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '60844+phv_vsat_diff_27'
+ua = '4.0655985e-009+phv_ua_diff_27'
+ub = '-5.6854e-021+phv_ub_diff_27'
+uc = -4.527e-012
+rdsw = '788.47+phv_rdsw_diff_27'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.027729+phv_u0_diff_27'
+a0 = '0.80598+phv_a0_diff_27'
+keta = '-0.096905+phv_keta_diff_27'
+a1 = 0
+a2 = 0.5
+ags = '1.25+phv_ags_diff_27'
+b0 = '0+phv_b0_diff_27'
+b1 = '0+phv_b1_diff_27'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.10586774+phv_voff_diff_27'
+nfactor = '1.3874+phv_nfactor_diff_27'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_27'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.023711+phv_eta0_diff_27'
+etab = 0
+dsub = 0.30839886
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2669585+phv_pclm_diff_27'
+pdiblc1 = 0.56716046
+pdiblc2 = 0.0054000816
+pdiblcb = -0.025
+drout = 0.89134169
+pscbe1 = 3.8734436e+008
+pscbe2 = 1.4665318e-008
+pvag = 0
+delta = 0.01
+alpha0 = 7.1782526e-005
+alpha1 = 0
+beta0 = 52.761864
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_27'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_27'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '6.5211e-009+phv_agidl_diff_27'
+bgidl = '1.7072e009+phv_bgidl_diff_27'
+cgidl = '230+phv_cgidl_diff_27'
+egidl = 0.76686217
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.61848+phv_kt1_diff_27'
+kt2 = -0.019032
+at = 18000
+ute = -1.4273
+ua1 = 5.52e-010
+ub1 = -3.2992e-018
+uc1 = -4.1496e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.02e-06
+sbref = 2.01e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.28 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.95e-07 lmax = 8.05e-07 wmin = 4.995e-06 wmax = 5.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.93332+phv_vth0_diff_28'
+k1 = 0.57633
+k2 = '0.025668+phv_k2_diff_28'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '61200+phv_vsat_diff_28'
+ua = '2.3466113e-009+phv_ua_diff_28'
+ub = '7.4804e-019+phv_ub_diff_28'
+uc = -2.4658e-012
+rdsw = '788.47+phv_rdsw_diff_28'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.021512+phv_u0_diff_28'
+a0 = '0.84351+phv_a0_diff_28'
+keta = '-0.06519+phv_keta_diff_28'
+a1 = 0
+a2 = 0.5
+ags = '0.72112+phv_ags_diff_28'
+b0 = '0+phv_b0_diff_28'
+b1 = '0+phv_b1_diff_28'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.072821331+phv_voff_diff_28'
+nfactor = '1.495+phv_nfactor_diff_28'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_28'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.00071157+phv_eta0_diff_28'
+etab = -0.00053192
+dsub = 0.27482351
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.97220765+phv_pclm_diff_28'
+pdiblc1 = 0.45695731
+pdiblc2 = 0.011410926
+pdiblcb = -0.025
+drout = 0.43179535
+pscbe1 = 4e+008
+pscbe2 = 1.3503615e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1.7240171e-005
+alpha1 = 0
+beta0 = 45.34673
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_28'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_28'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.6706e-008+phv_agidl_diff_28'
+bgidl = '1.8073e009+phv_bgidl_diff_28'
+cgidl = '520+phv_cgidl_diff_28'
+egidl = 0.48103697
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6405+phv_kt1_diff_28'
+kt2 = -0.019032
+at = 25000
+ute = -1.4798
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.41e-06
+sbref = 2.41e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.29 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.96224+phv_vth0_diff_29'
+k1 = 0.57939
+k2 = '0.020277+phv_k2_diff_29'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '47889+phv_vsat_diff_29'
+ua = '1.6494295e-009+phv_ua_diff_29'
+ub = '1.0975e-018+phv_ub_diff_29'
+uc = -5.8546e-013
+rdsw = '788.47+phv_rdsw_diff_29'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.0196+phv_u0_diff_29'
+a0 = '0.85515+phv_a0_diff_29'
+keta = '-0.084672+phv_keta_diff_29'
+a1 = 0
+a2 = 0.5
+ags = '0.77943+phv_ags_diff_29'
+b0 = '0+phv_b0_diff_29'
+b1 = '0+phv_b1_diff_29'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.077755783+phv_voff_diff_29'
+nfactor = '1.3116+phv_nfactor_diff_29'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_29'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '4.2119e-005+phv_eta0_diff_29'
+etab = 0
+dsub = 0.54416
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2031125+phv_pclm_diff_29'
+pdiblc1 = 0.3995264
+pdiblc2 = 0.0015061847
+pdiblcb = -0.025
+drout = 0.41068941
+pscbe1 = 2.994803e+008
+pscbe2 = 1.4554569e-008
+pvag = 0
+delta = 0.01
+alpha0 = 6.7813161e-005
+alpha1 = 0
+beta0 = 50.152925
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_29'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_29'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '8.3464e-009+phv_agidl_diff_29'
+bgidl = '1.6889e009+phv_bgidl_diff_29'
+cgidl = '368+phv_cgidl_diff_29'
+egidl = 0.77897916
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6300+phv_kt1_diff_29'
+kt2 = -0.019032
+at = 30000
+ute = -1.4608
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.30 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.98989+phv_vth0_diff_30'
+k1 = 0.56874
+k2 = '0.021845+phv_k2_diff_30'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '116210+phv_vsat_diff_30'
+ua = '2.5957213e-009+phv_ua_diff_30'
+ub = '8.9538e-019+phv_ub_diff_30'
+uc = 0
+rdsw = '788.47+phv_rdsw_diff_30'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.023594+phv_u0_diff_30'
+a0 = '0.92576+phv_a0_diff_30'
+keta = '-0.01712+phv_keta_diff_30'
+a1 = 0
+a2 = 0.5
+ags = '0.19+phv_ags_diff_30'
+b0 = '0+phv_b0_diff_30'
+b1 = '0+phv_b1_diff_30'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.12041324+phv_voff_diff_30'
+nfactor = '1.2+phv_nfactor_diff_30'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_30'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.1438+phv_eta0_diff_30'
+etab = -0.015108
+dsub = 0.29315
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.60569082+phv_pclm_diff_30'
+pdiblc1 = 0.1893326
+pdiblc2 = 0.003828528
+pdiblcb = -0.225
+drout = 1
+pscbe1 = 3.6834658e+008
+pscbe2 = 1.4543145e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_30'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_30'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '7.1796e-009+phv_agidl_diff_30'
+bgidl = '1.2201e009+phv_bgidl_diff_30'
+cgidl = '468.55+phv_cgidl_diff_30'
+egidl = 2
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.5650+phv_kt1_diff_30'
+kt2 = -0.019032
+at = 150800
+ute = -1.4000
+ua1 = 5.524e-010
+ub1 = -3.6627e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.31 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.99467+phv_vth0_diff_31'
+k1 = 0.58606
+k2 = '0.019966+phv_k2_diff_31'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '100010+phv_vsat_diff_31'
+ua = '2.9651633e-009+phv_ua_diff_31'
+ub = '2.244e-019+phv_ub_diff_31'
+uc = -2.8099e-011
+rdsw = '788.47+phv_rdsw_diff_31'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.024036+phv_u0_diff_31'
+a0 = '0.8749+phv_a0_diff_31'
+keta = '-0.010964+phv_keta_diff_31'
+a1 = 0
+a2 = 0.5
+ags = '0.15682+phv_ags_diff_31'
+b0 = '0+phv_b0_diff_31'
+b1 = '0+phv_b1_diff_31'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.091596347+phv_voff_diff_31'
+nfactor = '0.8+phv_nfactor_diff_31'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_31'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_31'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.83237107+phv_pclm_diff_31'
+pdiblc1 = 0.39
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 1e+008
+pscbe2 = 4.602312e-008
+pvag = 0
+delta = 0.01
+alpha0 = 2.2543089e-005
+alpha1 = 0
+beta0 = 37.371509
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_31'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_31'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '8.2118e-009+phv_agidl_diff_31'
+bgidl = '1.9363e009+phv_bgidl_diff_31'
+cgidl = '462+phv_cgidl_diff_31'
+egidl = 0.16572358
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.566+phv_kt1_diff_31'
+kt2 = -0.019032
+at = 181310
+ute = -1.5561
+ua1 = 2.2096e-011
+ub1 = -3.6920e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.32 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-1+phv_vth0_diff_32'
+k1 = 0.59521
+k2 = '0.019927+phv_k2_diff_32'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '200000+phv_vsat_diff_32'
+ua = '2.7044348e-009+phv_ua_diff_32'
+ub = '3.9379e-019+phv_ub_diff_32'
+uc = -3.9972e-011
+rdsw = '788.47+phv_rdsw_diff_32'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.0229+phv_u0_diff_32'
+a0 = '0.89552+phv_a0_diff_32'
+keta = '-0.0079259+phv_keta_diff_32'
+a1 = 0
+a2 = 0.5
+ags = '0.1318+phv_ags_diff_32'
+b0 = '0+phv_b0_diff_32'
+b1 = '0+phv_b1_diff_32'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.093204657+phv_voff_diff_32'
+nfactor = '1.0849+phv_nfactor_diff_32'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_32'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_32'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.08353125+phv_pclm_diff_32'
+pdiblc1 = 0.39
+pdiblc2 = 0.0029407877
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 3.3371283e+008
+pscbe2 = 1.5000958e-008
+pvag = 0
+delta = 0.01
+alpha0 = 5.0667189e-005
+alpha1 = 0
+beta0 = 38.266046
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_32'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_32'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '7.3657e-009+phv_agidl_diff_32'
+bgidl = '1.7047e009+phv_bgidl_diff_32'
+cgidl = '700+phv_cgidl_diff_32'
+egidl = 0.69350825
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.57573+phv_kt1_diff_32'
+kt2 = -0.019032
+at = 430000
+ute = -1.3864
+ua1 = 7.0656e-010
+ub1 = -3.145e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.33 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.9675+phv_vth0_diff_33'
+k1 = 0.59804
+k2 = '0.024041+phv_k2_diff_33'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '67000+phv_vsat_diff_33'
+ua = '2.1590772e-009+phv_ua_diff_33'
+ub = '9.5539e-019+phv_ub_diff_33'
+uc = -5.2815e-012
+rdsw = '788.47+phv_rdsw_diff_33'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.021377+phv_u0_diff_33'
+a0 = '0.95964+phv_a0_diff_33'
+keta = '-0.08587+phv_keta_diff_33'
+a1 = 0
+a2 = 0.5
+ags = '1.25+phv_ags_diff_33'
+b0 = '0+phv_b0_diff_33'
+b1 = '0+phv_b1_diff_33'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.10153677+phv_voff_diff_33'
+nfactor = '1.1999+phv_nfactor_diff_33'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_33'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.080055+phv_eta0_diff_33'
+etab = -0.0038503
+dsub = 0.27967
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.3366321+phv_pclm_diff_33'
+pdiblc1 = 0.29403034
+pdiblc2 = 0.0048008826
+pdiblcb = -0.025
+drout = 0.89960455
+pscbe1 = 3.6263996e+008
+pscbe2 = 1.448673e-008
+pvag = 0
+delta = 0.01
+alpha0 = 9.713535e-005
+alpha1 = 0
+beta0 = 54.684511
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_33'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_33'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.02e-008+phv_agidl_diff_33'
+bgidl = '1.5572e009+phv_bgidl_diff_33'
+cgidl = '174+phv_cgidl_diff_33'
+egidl = 0.66526877
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.60348+phv_kt1_diff_33'
+kt2 = -0.019032
+at = 18000
+ute = -1.3724
+ua1 = 5.52e-010
+ub1 = -2.16e-018
+uc1 = -4.1496e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.34 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.95e-07 lmax = 8.05e-07 wmin = 6.995e-06 wmax = 7.005e-06
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.949+phv_vth0_diff_34'
+k1 = 0.57633
+k2 = '0.025668+phv_k2_diff_34'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '61200+phv_vsat_diff_34'
+ua = '2.3466113e-009+phv_ua_diff_34'
+ub = '7.4804e-019+phv_ub_diff_34'
+uc = -2.4658e-012
+rdsw = '788.47+phv_rdsw_diff_34'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.022+phv_u0_diff_34'
+a0 = '0.84351+phv_a0_diff_34'
+keta = '-0.06519+phv_keta_diff_34'
+a1 = 0
+a2 = 0.5
+ags = '0.72112+phv_ags_diff_34'
+b0 = '0+phv_b0_diff_34'
+b1 = '0+phv_b1_diff_34'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.072821331+phv_voff_diff_34'
+nfactor = '1.495+phv_nfactor_diff_34'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_34'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '5.6926e-005+phv_eta0_diff_34'
+etab = -0.00021277
+dsub = 0.27482
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.97220765+phv_pclm_diff_34'
+pdiblc1 = 0.45695731
+pdiblc2 = 0.011410926
+pdiblcb = -0.025
+drout = 0.43179535
+pscbe1 = 4e+008
+pscbe2 = 1.3503615e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1.7240171e-005
+alpha1 = 0
+beta0 = 45.34673
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_34'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_34'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.136e-008+phv_agidl_diff_34'
+bgidl = '1.8073e009+phv_bgidl_diff_34'
+cgidl = '520+phv_cgidl_diff_34'
+egidl = 0.48103697
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6435+phv_kt1_diff_34'
+kt2 = -0.019032
+at = 25000
+ute = -1.4798
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.41e-06
+sbref = 2.41e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.35 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.90360217+phv_vth0_diff_35'
+k1 = 0.58237463
+k2 = '0.021666466+phv_k2_diff_35'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '89566+phv_vsat_diff_35'
+ua = '1.7625428e-009+phv_ua_diff_35'
+ub = '5.4082628e-019+phv_ub_diff_35'
+uc = -4.2959383e-012
+rdsw = '788.47+phv_rdsw_diff_35'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.018653409+phv_u0_diff_35'
+a0 = '0.63337751+phv_a0_diff_35'
+keta = '-0.012595257+phv_keta_diff_35'
+a1 = 0
+a2 = 0.5
+ags = '0.128125+phv_ags_diff_35'
+b0 = '0+phv_b0_diff_35'
+b1 = '0+phv_b1_diff_35'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.088381148+phv_voff_diff_35'
+nfactor = '1.4655+phv_nfactor_diff_35'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_35'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.28744+phv_eta0_diff_35'
+etab = -0.00077252
+dsub = 0.26831464
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.97281896+phv_pclm_diff_35'
+pdiblc1 = 0.42058379
+pdiblc2 = 0.0011725831
+pdiblcb = -0.025
+drout = 0.87592071
+pscbe1 = 3.089798e+008
+pscbe2 = 1.4883743e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1.053402e-005
+alpha1 = 0
+beta0 = 40.210566
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_35'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_35'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '5e-008+phv_agidl_diff_35'
+bgidl = '1.7848738e009+phv_bgidl_diff_35'
+cgidl = '1000+phv_cgidl_diff_35'
+egidl = 0.76372321
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6400+phv_kt1_diff_35'
+kt2 = -0.019032
+at = 10000
+ute = -1.4498
+ua1 = 5.524e-010
+ub1 = -2.8959e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.36 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.9995e-05 lmax = 2.0005e-05 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.95807+phv_vth0_diff_36'
+k1 = 0.60281
+k2 = '0.018238228+phv_k2_diff_36'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '26719+phv_vsat_diff_36'
+ua = '1.5847414e-009+phv_ua_diff_36'
+ub = '7.8391e-019+phv_ub_diff_36'
+uc = -4.1711723e-011
+rdsw = '788.47+phv_rdsw_diff_36'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.018506+phv_u0_diff_36'
+a0 = '0.90435+phv_a0_diff_36'
+keta = '-0.0042037+phv_keta_diff_36'
+a1 = 0
+a2 = 0.5
+ags = '0.10781371+phv_ags_diff_36'
+b0 = '0+phv_b0_diff_36'
+b1 = '0+phv_b1_diff_36'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.12217944+phv_voff_diff_36'
+nfactor = '0.8+phv_nfactor_diff_36'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_36'
+cit = 9.1876579e-008
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_36'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.08353125+phv_pclm_diff_36'
+pdiblc1 = 0.39
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 2.25e+008
+pscbe2 = 1.5e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_36'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_36'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1e-008+phv_agidl_diff_36'
+bgidl = '1.2463e009+phv_bgidl_diff_36'
+cgidl = '1400+phv_cgidl_diff_36'
+egidl = 2
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.55573+phv_kt1_diff_36'
+kt2 = -0.019032
+at = 46800
+ute = -1.4448
+ua1 = 7.0656e-010
+ub1 = -3.145e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.37 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.95955+phv_vth0_diff_37'
+k1 = 0.59139
+k2 = '0.019352451+phv_k2_diff_37'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '130850+phv_vsat_diff_37'
+ua = '1.9590891e-009+phv_ua_diff_37'
+ub = '5.3943007e-019+phv_ub_diff_37'
+uc = -1.1497139e-011
+rdsw = '788.47+phv_rdsw_diff_37'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.020158+phv_u0_diff_37'
+a0 = '0.88+phv_a0_diff_37'
+keta = '-0.009+phv_keta_diff_37'
+a1 = 0
+a2 = 0.5
+ags = '0.10+phv_ags_diff_37'
+b0 = '0+phv_b0_diff_37'
+b1 = '0+phv_b1_diff_37'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.10401589+phv_voff_diff_37'
+nfactor = '1.0056+phv_nfactor_diff_37'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_37'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phv_eta0_diff_37'
+etab = -1.0565
+dsub = 0.26
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.8727984+phv_pclm_diff_37'
+pdiblc1 = 0.58340637
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.31028214
+pscbe1 = 2.9284027e+008
+pscbe2 = 1.4741685e-008
+pvag = 0
+delta = 0.01
+alpha0 = 5.7693836e-006
+alpha1 = 0
+beta0 = 35.270704
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_37'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_37'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '6.86e-008+phv_agidl_diff_37'
+bgidl = '1.5689515e009+phv_bgidl_diff_37'
+cgidl = '1152+phv_cgidl_diff_37'
+egidl = 1.4760927
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.588+phv_kt1_diff_37'
+kt2 = -0.019032
+at = 184000
+ute = -1.35
+ua1 = 5.524e-010
+ub1 = -3.2036e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.38 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.96107+phv_vth0_diff_38'
+k1 = 0.59047
+k2 = '0.018746757+phv_k2_diff_38'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '120230+phv_vsat_diff_38'
+ua = '2.1146882e-009+phv_ua_diff_38'
+ub = '2.5096855e-019+phv_ub_diff_38'
+uc = -2.7456539e-011
+rdsw = '788.47+phv_rdsw_diff_38'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.020131+phv_u0_diff_38'
+a0 = '0.81+phv_a0_diff_38'
+keta = '-0.0050598+phv_keta_diff_38'
+a1 = 0
+a2 = 0.5
+ags = '0.11483891+phv_ags_diff_38'
+b0 = '0+phv_b0_diff_38'
+b1 = '0+phv_b1_diff_38'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.10968052+phv_voff_diff_38'
+nfactor = '1.005+phv_nfactor_diff_38'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_38'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_38'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2961212+phv_pclm_diff_38'
+pdiblc1 = 0.39
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 2.2500144e+008
+pscbe2 = 1.5000011e-008
+pvag = 0
+delta = 0.01
+alpha0 = 2.206037e-005
+alpha1 = 0
+beta0 = 36.963614
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_38'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_38'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '6.37e-008+phv_agidl_diff_38'
+bgidl = '1.5860386e009+phv_bgidl_diff_38'
+cgidl = '1200+phv_cgidl_diff_38'
+egidl = 1.3291649
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.566+phv_kt1_diff_38'
+kt2 = -0.019032
+at = 219650
+ute = -1.4424
+ua1 = 2.2096e-011
+ub1 = -2.3998e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.39 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.995e-06 lmax = 8.005e-06 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.9723+phv_vth0_diff_39'
+k1 = 0.55533
+k2 = '0.030745+phv_k2_diff_39'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '80156+phv_vsat_diff_39'
+ua = '2.2137527e-009+phv_ua_diff_39'
+ub = '2.7518e-019+phv_ub_diff_39'
+uc = -3.1546e-011
+rdsw = '788.47+phv_rdsw_diff_39'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.020541+phv_u0_diff_39'
+a0 = '0.88+phv_a0_diff_39'
+keta = '-0.0051528+phv_keta_diff_39'
+a1 = 0
+a2 = 0.5
+ags = '0.11911+phv_ags_diff_39'
+b0 = '0+phv_b0_diff_39'
+b1 = '0+phv_b1_diff_39'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.12715703+phv_voff_diff_39'
+nfactor = '1.134+phv_nfactor_diff_39'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_39'
+cit = 2.5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_39'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.083531+phv_pclm_diff_39'
+pdiblc1 = 0.39
+pdiblc2 = 0.0056422857
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 2.25e+008
+pscbe2 = 1.5e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_39'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_39'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '7e-008+phv_agidl_diff_39'
+bgidl = '1.3e009+phv_bgidl_diff_39'
+cgidl = '1485+phv_cgidl_diff_39'
+egidl = 2
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.546+phv_kt1_diff_39'
+kt2 = -0.019032
+at = 151090
+ute = -1.5561
+ua1 = 2.2096e-011
+ub1 = -3.0767e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.40 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.93514+phv_vth0_diff_40'
+k1 = 0.5044
+k2 = '0.047795+phv_k2_diff_40'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '96000+phv_vsat_diff_40'
+ua = '2.520839e-009+phv_ua_diff_40'
+ub = '-3.95e-021+phv_ub_diff_40'
+uc = -7.0465e-012
+rdsw = '788.47+phv_rdsw_diff_40'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.020095+phv_u0_diff_40'
+a0 = '0.023438+phv_a0_diff_40'
+keta = '-0.0087101+phv_keta_diff_40'
+a1 = 0
+a2 = 0.5
+ags = '0.024023+phv_ags_diff_40'
+b0 = '0+phv_b0_diff_40'
+b1 = '0+phv_b1_diff_40'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.08150653+phv_voff_diff_40'
+nfactor = '1.8602+phv_nfactor_diff_40'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_40'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.0042715+phv_eta0_diff_40'
+etab = -0.021343
+dsub = 0.27992
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.0922+phv_pclm_diff_40'
+pdiblc1 = 0.38852895
+pdiblc2 = 0.0069782586
+pdiblcb = -0.025
+drout = 0.82656681
+pscbe1 = 3.6230113e+008
+pscbe2 = 1.4700248e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1.0979853e-005
+alpha1 = 0
+beta0 = 43.428559
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_40'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_40'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '4.144e-008+phv_agidl_diff_40'
+bgidl = '1.671e009+phv_bgidl_diff_40'
+cgidl = '767.95+phv_cgidl_diff_40'
+egidl = 1.1526517
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.64948+phv_kt1_diff_40'
+kt2 = -0.019032
+at = 18000
+ute = -1.3624
+ua1 = 5.52e-010
+ub1 = -2.894e-018
+uc1 = -4.1496e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.41 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.90453619+phv_vth0_diff_41'
+k1 = 0.53447619
+k2 = '0.039396842+phv_k2_diff_41'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '85096.792+phv_vsat_diff_41'
+ua = '1.173516e-009+phv_ua_diff_41'
+ub = '1.222731e-018+phv_ub_diff_41'
+uc = -4.6607993e-012
+rdsw = '788.47+phv_rdsw_diff_41'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.016303299+phv_u0_diff_41'
+a0 = '0.63343726+phv_a0_diff_41'
+keta = '-0.019041557+phv_keta_diff_41'
+a1 = 0
+a2 = 0.5
+ags = '0.43242187+phv_ags_diff_41'
+b0 = '0+phv_b0_diff_41'
+b1 = '0+phv_b1_diff_41'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.11136124+phv_voff_diff_41'
+nfactor = '1.3719842+phv_nfactor_diff_41'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_41'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.094454882+phv_eta0_diff_41'
+etab = -0.035896073
+dsub = 0.29420499
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.0997509+phv_pclm_diff_41'
+pdiblc1 = 0.35412617
+pdiblc2 = 0.0032399298
+pdiblcb = -0.025
+drout = 0.71796338
+pscbe1 = 3.8500909e+008
+pscbe2 = 1.3804759e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1.9848596e-005
+alpha1 = 0
+beta0 = 45.089194
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_41'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_41'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '8e-008+phv_agidl_diff_41'
+bgidl = '1.5810321e009+phv_bgidl_diff_41'
+cgidl = '1908.2+phv_cgidl_diff_41'
+egidl = 1.3390402
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.60348+phv_kt1_diff_41'
+kt2 = -0.019032
+at = 10000
+ute = -1.2412
+ua1 = 5.52e-010
+ub1 = -1.8696e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.02e-06
+sbref = 2.01e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.42 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.95e-07 lmax = 8.05e-07 wmin = 4.15e-07 wmax = 4.25e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.9264+phv_vth0_diff_42'
+k1 = 0.52566309
+k2 = '0.035643+phv_k2_diff_42'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '77067+phv_vsat_diff_42'
+ua = '1.5643566e-009+phv_ua_diff_42'
+ub = '6.5919e-019+phv_ub_diff_42'
+uc = -4.3553868e-012
+rdsw = '788.47+phv_rdsw_diff_42'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.018908+phv_u0_diff_42'
+a0 = '0.76528248+phv_a0_diff_42'
+keta = '-0.029626108+phv_keta_diff_42'
+a1 = 0
+a2 = 0.5
+ags = '0.40595436+phv_ags_diff_42'
+b0 = '0+phv_b0_diff_42'
+b1 = '0+phv_b1_diff_42'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.11007505+phv_voff_diff_42'
+nfactor = '1.3820472+phv_nfactor_diff_42'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_42'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.49+phv_eta0_diff_42'
+etab = -6.25e-006
+dsub = 0.46919791
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.99477438+phv_pclm_diff_42'
+pdiblc1 = 0.40166422
+pdiblc2 = 0.0064917125
+pdiblcb = -0.025
+drout = 0.51082388
+pscbe1 = 3.0891221e+008
+pscbe2 = 1.4440738e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_42'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_42'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '6.824e-007+phv_agidl_diff_42'
+bgidl = '1.5947033e009+phv_bgidl_diff_42'
+cgidl = '5748.2+phv_cgidl_diff_42'
+egidl = 2
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6175+phv_kt1_diff_42'
+kt2 = -0.019032
+at = 10000
+ute = -1.4798
+ua1 = 5.524e-010
+ub1 = -2.8959e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.41e-06
+sbref = 2.41e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.43 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 9.95e-07 lmax = 1.005e-06 wmin = 7.45e-07 wmax = 7.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.88639+phv_vth0_diff_43'
+k1 = 0.55984
+k2 = '0.026386144+phv_k2_diff_43'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '69528+phv_vsat_diff_43'
+ua = '2.0341039e-009+phv_ua_diff_43'
+ub = '5.878e-019+phv_ub_diff_43'
+uc = -2.7970035e-012
+rdsw = '788.47+phv_rdsw_diff_43'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.018442+phv_u0_diff_43'
+a0 = '0.73934+phv_a0_diff_43'
+keta = '-0.032622+phv_keta_diff_43'
+a1 = 0
+a2 = 0.5
+ags = '0.43242187+phv_ags_diff_43'
+b0 = '0+phv_b0_diff_43'
+b1 = '0+phv_b1_diff_43'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.075734118+phv_voff_diff_43'
+nfactor = '1.5401+phv_nfactor_diff_43'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_43'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.036111+phv_eta0_diff_43'
+etab = -0.0043407
+dsub = 0.31595571
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.1707598+phv_pclm_diff_43'
+pdiblc1 = 0.54661982
+pdiblc2 = 0.0020306546
+pdiblcb = -0.025
+drout = 0.42584153
+pscbe1 = 2.7813655e+008
+pscbe2 = 1.4513967e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_43'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_43'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.056e-010+phv_agidl_diff_43'
+bgidl = '1.0285e009+phv_bgidl_diff_43'
+cgidl = '994.06+phv_cgidl_diff_43'
+egidl = 0.90967406
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6480+phv_kt1_diff_43'
+kt2 = -0.019032
+at = 30000
+ute = -1.4498
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.81e-06
+sbref = 2.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.44 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 1.995e-06 lmax = 2.005e-06 wmin = 7.45e-07 wmax = 7.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.904+phv_vth0_diff_44'
+k1 = 0.55984
+k2 = '0.026386144+phv_k2_diff_44'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '38200+phv_vsat_diff_44'
+ua = '2.0341039e-009+phv_ua_diff_44'
+ub = '6.4658e-019+phv_ub_diff_44'
+uc = -2.7970035e-012
+rdsw = '788.47+phv_rdsw_diff_44'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.01918+phv_u0_diff_44'
+a0 = '0.73934+phv_a0_diff_44'
+keta = '-0.037189+phv_keta_diff_44'
+a1 = 0
+a2 = 0.5
+ags = '0.43242187+phv_ags_diff_44'
+b0 = '0+phv_b0_diff_44'
+b1 = '0+phv_b1_diff_44'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.075734118+phv_voff_diff_44'
+nfactor = '1.5401+phv_nfactor_diff_44'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_44'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.06+phv_eta0_diff_44'
+etab = 0
+dsub = 0.31595571
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.1707598+phv_pclm_diff_44'
+pdiblc1 = 0.54661982
+pdiblc2 = 0.0020306546
+pdiblcb = -0.025
+drout = 0.42584153
+pscbe1 = 2.7813655e+008
+pscbe2 = 1.4513967e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_44'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_44'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '1.056e-010+phv_agidl_diff_44'
+bgidl = '1.0285e009+phv_bgidl_diff_44'
+cgidl = '1670+phv_cgidl_diff_44'
+egidl = 0.90967406
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6480+phv_kt1_diff_44'
+kt2 = -0.019032
+at = 34800
+ute = -1.4498
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.45 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 3.995e-06 lmax = 4.005e-06 wmin = 7.45e-07 wmax = 7.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.93527+phv_vth0_diff_45'
+k1 = 0.57102
+k2 = '0.023085+phv_k2_diff_45'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '180350+phv_vsat_diff_45'
+ua = '2.334849e-009+phv_ua_diff_45'
+ub = '3.4026e-019+phv_ub_diff_45'
+uc = -3.2639e-011
+rdsw = '788.47+phv_rdsw_diff_45'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.020132+phv_u0_diff_45'
+a0 = '0.87668+phv_a0_diff_45'
+keta = '-0.0076977+phv_keta_diff_45'
+a1 = 0
+a2 = 0.5
+ags = '0.1244+phv_ags_diff_45'
+b0 = '0+phv_b0_diff_45'
+b1 = '0+phv_b1_diff_45'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.10903374+phv_voff_diff_45'
+nfactor = '1.0655+phv_nfactor_diff_45'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_45'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.08+phv_eta0_diff_45'
+etab = -0.07
+dsub = 0.56
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '0.99495+phv_pclm_diff_45'
+pdiblc1 = 0.39
+pdiblc2 = 0.00129
+pdiblcb = -0.025
+drout = 0.56
+pscbe1 = 2.2560035e+008
+pscbe2 = 1.4994384e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1.8978653e-005
+alpha1 = 0
+beta0 = 37.686511
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_45'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_45'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '3.08e-008+phv_agidl_diff_45'
+bgidl = '1.7019e009+phv_bgidl_diff_45'
+cgidl = '1200+phv_cgidl_diff_45'
+egidl = 1.0890786
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.566+phv_kt1_diff_45'
+kt2 = -0.019032
+at = 351440
+ute = -1.4104
+ua1 = 2.2096e-011
+ub1 = -2.3998e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 3.0e-06
+sbref = 3.0e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.46 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 4.95e-07 lmax = 5.05e-07 wmin = 7.45e-07 wmax = 7.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.92036+phv_vth0_diff_46'
+k1 = 0.53224
+k2 = '0.046095+phv_k2_diff_46'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '80727+phv_vsat_diff_46'
+ua = '1.8760013e-009+phv_ua_diff_46'
+ub = '1.0003e-018+phv_ub_diff_46'
+uc = -5.0888e-012
+rdsw = '788.47+phv_rdsw_diff_46'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.017891+phv_u0_diff_46'
+a0 = '0.68242+phv_a0_diff_46'
+keta = '-0.04781+phv_keta_diff_46'
+a1 = 0
+a2 = 0.5
+ags = '0.98885+phv_ags_diff_46'
+b0 = '0+phv_b0_diff_46'
+b1 = '0+phv_b1_diff_46'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.099269478+phv_voff_diff_46'
+nfactor = '1.7634+phv_nfactor_diff_46'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_46'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.068197+phv_eta0_diff_46'
+etab = -0.0043723
+dsub = 0.26967
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.0392+phv_pclm_diff_46'
+pdiblc1 = 0.18044532
+pdiblc2 = 0.0037051928
+pdiblcb = -0.025
+drout = 1
+pscbe1 = 4e+008
+pscbe2 = 1.4741409e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1.9436447e-005
+alpha1 = 0
+beta0 = 46.62143
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_46'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_46'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '3.32e-008+phv_agidl_diff_46'
+bgidl = '1.7842e009+phv_bgidl_diff_46'
+cgidl = '840+phv_cgidl_diff_46'
+egidl = 0.92927294
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.64848+phv_kt1_diff_46'
+kt2 = -0.019032
+at = 5000
+ute = -1.3696
+ua1 = 5.52e-010
+ub1 = -2.6784e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 1.81e-06
+sbref = 1.81e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.47 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 7.95e-07 lmax = 8.05e-07 wmin = 7.45e-07 wmax = 7.55e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.88639+phv_vth0_diff_47'
+k1 = 0.55984
+k2 = '0.026386144+phv_k2_diff_47'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '75574+phv_vsat_diff_47'
+ua = '2.0341039e-009+phv_ua_diff_47'
+ub = '5.878e-019+phv_ub_diff_47'
+uc = -2.7970035e-012
+rdsw = '788.47+phv_rdsw_diff_47'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.019002+phv_u0_diff_47'
+a0 = '0.73934+phv_a0_diff_47'
+keta = '-0.032622+phv_keta_diff_47'
+a1 = 0
+a2 = 0.5
+ags = '0.43242187+phv_ags_diff_47'
+b0 = '0+phv_b0_diff_47'
+b1 = '0+phv_b1_diff_47'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.075734118+phv_voff_diff_47'
+nfactor = '1.5401+phv_nfactor_diff_47'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_47'
+cit = 1e-005
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.036111+phv_eta0_diff_47'
+etab = -0.0043407
+dsub = 0.31595571
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.1707598+phv_pclm_diff_47'
+pdiblc1 = 0.54661982
+pdiblc2 = 0.0020306546
+pdiblcb = -0.025
+drout = 0.42584153
+pscbe1 = 2.7813655e+008
+pscbe2 = 1.4513967e-008
+pvag = 0
+delta = 0.01
+alpha0 = 1e-010
+alpha1 = 1e-010
+beta0 = 3
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_47'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_47'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '2.4e-010+phv_agidl_diff_47'
+bgidl = '1.0285e009+phv_bgidl_diff_47'
+cgidl = '994.06+phv_cgidl_diff_47'
+egidl = 0.90967406
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.6475+phv_kt1_diff_47'
+kt2 = -0.019032
+at = 10000
+ute = -1.4798
+ua1 = 5.524e-010
+ub1 = -3.5909e-018
+uc1 = -1.092e-010
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.41e-06
+sbref = 2.41e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******
.model phv.48 pmos
*
*DC IV MOS PARAMETERS
*
+lmin = 5.95e-07 lmax = 6.05e-07 wmin = 6.95e-07 wmax = 7.05e-07
+level = 54
+tnom = 30
+version = 4.5
+toxm = 1.175e-008
+xj = 1.5e-007
+lln = 1
+lwn = 1
+wln = 1
+wwn = 1
+lint = '4.5375e-008+phv_lint_diff'
+ll = 0
+lw = 0
+lwl = 0
+wint = '1.2277e-008+phv_wint_diff'
+wl = 0
+ww = 0
+wwl = 0
+xl = 0
+xw = 0
+mobmod = 0
+binunit = 2
+dwg = -4.7338e-009
+dwb = 0
*NEW BSIM4 Parameters(Model Selectors)
+igcmod = 0
+igbmod = 0
+rgatemod = 0
+rbodymod = 1
+trnqsmod = 0
+acnqsmod = 0
+fnoimod = 1
+tnoimod = 1
+permod = 1
+geomod = 0
+rdsmod = 0
+tempmod = 0
*******
*NEW BSIM4 Parameters(4.4 Version)
+lintnoi = 0
+vfbsdoff = 0
+lambda = 0
+vtl = 0
+lc = 5e-009
+xn = 3
+rnoia = 0.577
+rnoib = 0.37
+tnoia = 1.5
+tnoib = 3.5
*NEW BSIM4 Parameters(Process Parameters)
+epsrox = 3.9
+toxe = '1.175e-008*phv_toxe_mult'
+dtox = 0
+ndep = 1.7e+017
+nsd = 1e+020
+rshg = 0.1
****
+rsh = '1*phv_rshp_mult'
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-0.87115+phv_vth0_diff_48'
+k1 = 0.57069
+k2 = '0.030351152+phv_k2_diff_48'
+k3 = -2.2405
+dvt0 = 4.657
+dvt1 = 0.34864
+dvt2 = -0.030206
+dvt0w = -2.2
+dvt1w = 1016300
+dvt2w = 0
+w0 = 0
+k3b = -0.172
*NEW BSIM4 Parameters for Level 54
+phin = 0
+lpe0 = 0
+lpeb = 0
+vbm = -3
+dvtp0 = 0
+dvtp1 = 0
*
* MOBILITY PARAMETERS
*
+vsat = '68461+phv_vsat_diff_48'
+ua = '9.5685789e-010+phv_ua_diff_48'
+ub = '1.6857e-018+phv_ub_diff_48'
+uc = -2.8451032e-012
+rdsw = '788.47+phv_rdsw_diff_48'
+prwb = 0.053538
+prwg = 0
+wr = 1
+u0 = '0.015405+phv_u0_diff_48'
+a0 = '0.81031+phv_a0_diff_48'
+keta = '-0.073162+phv_keta_diff_48'
+a1 = 0
+a2 = 0.5
+ags = '0.9538163+phv_ags_diff_48'
+b0 = '0+phv_b0_diff_48'
+b1 = '0+phv_b1_diff_48'
*NEW BSIM4 Parameters(Mobility Parameters)
+eu = 1.67
+rdswmin = 0
+rdw = 0
+rdwmin = 0
+rsw = 0
+rswmin = 0
*****
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = '-0.10729755+phv_voff_diff_48'
+nfactor = '1.2484+phv_nfactor_diff_48'
+up = 0.0
+ud = 0.0
+lp = 1.0
+tvfbsdoff = 0.0
+tvoff = '0+phv_tvoff_diff_48'
+cit = 5e-006
+cdsc = 0
+cdscb = 0
+cdscd = 0
+eta0 = '0.020883+phv_eta0_diff_48'
+etab = 0
+dsub = 0.29051085
*NEW BSIM4 Parameters(Sub-threshold parameters)
+voffl = 0
+minv = 0
*****
*
* ROUT PARAMETERS
*
+pclm = '1.2193396+phv_pclm_diff_48'
+pdiblc1 = 0.59952915
+pdiblc2 = 0.0045454479
+pdiblcb = -0.025
+drout = 0.99912731
+pscbe1 = 4e+008
+pscbe2 = 1.4479847e-008
+pvag = 0
+delta = 0.01
+alpha0 = 3.4267536e-005
+alpha1 = 0
+beta0 = 49.499633
*NEW BSIM4 Parameters(ROUT Parameters)
+fprout = 0
+pdits = '0+phv_pdits_diff_48'
+pditsl = 0
+pditsd = '0+phv_pditsd_diff_48'
****
*NEW BSIM4 Parameters(GATE INDUCED DRAIN LEAKAGE MODEL PARAMTERS)
+agidl = '2.91e-008+phv_agidl_diff_48'
+bgidl = '1.7407e009+phv_bgidl_diff_48'
+cgidl = '800+phv_cgidl_diff_48'
+egidl = 0.95326514
****
*NEW BSIM4 Parameters(Gate Leakage Current Parameters)
+aigbacc = 0.43
+bigbacc = 0.054
+cigbacc = 0.075
+nigbacc = 1
+aigbinv = 0.35
+bigbinv = 0.03
+cigbinv = 0.006
+eigbinv = 1.1
+nigbinv = 3
+aigc = 0.43
+bigc = 0.054
+cigc = 0.075
+nigc = 1
+aigsd = 0.43
+bigsd = 0.054
+cigsd = 0.075
+dlcig = 0
+poxedge = 1
+pigcd = 1
+ntox = 1
+toxref = 1.175e-008
*****
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1 = '-0.60348+phv_kt1_diff_48'
+kt2 = -0.019032
+at = 10000
+ute = -1.3412
+ua1 = 5.52e-010
+ub1 = -1.8696e-018
+uc1 = -3.7128e-011
+kt1l = 0
+prt = 0
*NEW BSIM4 Parameters(HIGH SPEED RF MODEL PARAMETERS)
+xrcrg1 = 12
+xrcrg2 = 1
+rbpb = 50
+rbpd = 50
+rbps = 50
+rbdb = 50
+rbsb = 50
+gbmin = 1e-012
****
*NEW BSIM4 Parameters(FLICKER and THERMAL NOISE PARAMETERS)
+noia = 3.0000000E+40
+noib = 8.5300000E+24
+noic = 8.4000000E+07
+em = 4.1000000E+07
+af = 1
+ef = 0.88
+kf = 0
+ntnoi = 1
*****
*NEW BSIM4 Parameters(LAYOUT DEPENDENT PARASITIC MODEL PARAMETERS)
+dmcg = 0
+dmcgt = 0
+dmdg = 0
+xgw = 0
+xgl = 0
+ngcon = 1
****
*
*DIODE DC IV PARAMTERS
*
*NEW BSIM4 Parameters(DIODE DC IV parameters)
+diomod = 1
+njs = 1.3632
+jss = 2.1483e-05
+jsws = 4.02e-12
+xtis = 10
+bvs = 12.69
+xjbvs = 1
+ijthsrev = 0.1
+ijthsfwd = 0.1
*
* DIODE and FET CAPACITANCE PARAMETERS
*
+tpb = 0.001671
+tpbsw = 0
+tpbswg = 0
+tcj = 0.00096
+tcjsw = 3e-005
+tcjswg = 0
+cgdo = '1.9771e-010*phv_overlap_mult'
+cgso = '1.9771e-010*phv_overlap_mult'
+cgbo = 0
+capmod = 2
+xpart = 0
+cgsl = '1.0005e-011*phv_overlap_mult'
+cgdl = '1.0005e-011*phv_overlap_mult'
+cf = 1.2e-011
+clc = 1e-007
+cle = 0.6
+dlc = '4.4983e-008+phv_dlc_diff+phv_dlc_rotweak'
+dwc = '0+phv_dwc_diff'
+vfbcv = -0.1446893
+acde = 0.401
+moin = 15.773
+noff = 4
+voffcv = 0
+ngate = 1e+023
+lwc = 0
+llc = 0
+lwlc = 0
+wlc = 0
+wwc = 0
+wwlc = 0
*NEW BSIM4 Parameters(FET and DIODE capacitance parameters)
+ckappas = 0.6
+cjs = '0.00077547*phv_ajunction_mult'
+mjs = 0.33956
+pbs = 0.6587
+cjsws = '9.8717e-011*phv_pjunction_mult'
+mjsws = 0.24676
+pbsws = 1
+cjswgs = '1.46e-010*phv_pjunction_mult'
+mjswgs = 0.81
+pbswgs = 3
*
*STRESS PARAMETERS
*
+saref = 2.02e-06
+sbref = 2.01e-06
+wlod = '0+phv_wlod_diff'
+kvth0 = '0+phv_kvth0_diff'
+lkvth0 = '0+phv_lkvth0_diff'
+wkvth0 = '0+phv_wkvth0_diff'
+pkvth0 = 0
+llodvth = 0
+wlodvth = 1
+stk2 = 0
+lodk2 = 1
+lodeta0 = 1
+ku0 = '0+phv_ku0_diff'
+lku0 = '0+phv_lku0_diff'
+wku0 = '0+phv_wku0_diff'
+pku0 = 0
+llodku0 = 0
+wlodku0 = 1
+kvsat = '0+phv_kvsat_diff'
+steta0 = 0
+tku0 = 0
******