blob: 6c778861c78d130015b652687721529d91c11237 [file] [log] [blame]
* BSIMTran Version 0.1.24, Created on 4-26-2002
* Username: pxg
* Command Line: /home/pxg/config/cydir/bin/lnx86/bsimtran diode.rf diode -p -npdiode_lvt PDIV1.PMD pdcv1.pm pdiode_lvt.pmd
* Working Directory: /home/hai/models/s8/s8tee/models.3.1/plowvt/combined
* Time: Wed Feb 28 10:48:27 2007
* Rule File: diode.rf
* Output File: pdiode_lvt.pmd
* Input Files:
* (1) PDIV1.PMD
* (2) pdcv1.pm
*copyright, Cypress Semiconductor, 2001
*BSIM3.V3 Diode Model
.model pdiode_lvt d
+level = 3
*
*PARAMETERS TO MAKE MODEL INTO CADFLOW
*
+tlevc = 1
+scalm = 1e-6
+area = 1e12
*
*JUNCTION CAPACITANCE PARAMETERS
*
+cj = '0.00076823*1e-12*plowvt_ajunction_mult' $ farads/m^2
+mj = 0.3362
+pb = 0.6587 $ V
+cjsw = '9.152e-011*1e-6*plowvt_pjunction_mult' $ farads/m
+mjsw = 0.2659
+php = 0.7418 $ V
+cta = 0.0012407 $ 1/C
+ctp = 0.00037357 $ 1/C
+tpb = 0.001671 $ V/C
+tphp = 0.001246 $ V/C
*
*DIODE IV PARAMETERS
*
+js = 2.1483e-017 $ A/m^2
+jsw = 1.447e-16 $ A/m
+n = 1.3632
+rs = 600 $ ohms (ohms/m^2 if area defined in netlist)
+ik = '4.76e-008/1e-12' $ A/m^2
+ikr = '0/1e-12' $ A/m^2
+vb = 12.69 $ V
+ibv = 0.00106 $ A
+trs = 0 $ 1/C
+eg = 1.05 $ eV
+xti = 5.2
+tref = 30 $ C
*
*DEFAULT PARAMETERS
*
+tcv = 0 $ 1/C
+gap1 = 0.000473 $ eV/C
+gap2 = 1110
+ttt1 = 0 $ 1/C
+ttt2 = 0 $ 1/C^2
+tm1 = 0 $ 1/C
+tm2 = 0 $ 1/C^2
+lm = 0 $ m
+lp = 0 $ m
+wm = 0 $ m
+wp = 0 $ m
+xm = 0 $ m
+xoi = 10000
+xom = 10000 $ Angstrom
+xp = 0 $ m
+xw = 0 $ m